2SK3989-01MR FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
TO-220F
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Remarks
Drain-source voltage
VGS=-30V
V
A
A
V
A
VDSX
ID
600
Continuous drain current
Pulsed drain current
3.0
ID(puls]
VGS
±12.0
±30
Gate-source voltage
Note *1
Note *2
Note *3
Repetitive or non-repetitive
IAR
3.0
Non-repetitive
Maximum avalanche energy
Equivalent circuit schematic
mJ
EAS
237.3
Repetitive
Maximum avalanche energy
EAR
dVDS/dt
2.1
20
mJ
Drain(D)
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
<
VDS 600V
kV/μs
kV/μs
W
=
dV/dt
PD
5
21
Note *4
°C
Tc=25
°C
Ta=25
2.16
+150
W
Operating and storage
temperature range
Isolation voltage
Tch
Gate(G)
°C
Tstg
VISO
-55 to +150
2
°C
Source(S)
t=60sec, f=60Hz
kVrms
<
Note *1 Tch 150°C
=
Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Symbol
BVDSS
VGS(th)
Item
μ
ID= 250 A
VGS=0V
Drain-source breakdown voltage
Gate threshold voltage
V
600
3.0
μ
ID= 250 A
VDS=VGS
V
5.0
25
Tch=25°C
μA
VDS=600V VGS=0V
VDS=480V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=0V
IGSS
RDS(on)
gfs
VGS=±30V
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=1.5A VGS=10V
2.64
3.0
3.30
Ω
S
1.5
ID=1.5A VDS=25V
VDS=25V
Ciss
pF
330
50
2.5
11
5.0
500
75
VGS=0V
Coss
Crss
td(on)
tr
Output capacitance
f=1MHz
5.0
18
7.5
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=1.5A
VGS=10V
23
10
13
35
15
20
td(off)
tf
Turn-off time toff
RGS=10 Ω
VCC=300V
ID=3.0A
QG
nC
Total Gate Charge
5.5
8.5
QGS
QGD
VSD
trr
Gate-Source Charge
Gate-Drain Charge
VGS=10V
2.8
1.00
0.5
2.3
4.2
IF=3.0A VGS=0V Tch=25°C
IF=3.0A VGS=0V
-di/dt=100A/μs
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
μs
μC
Qrr
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
5.952
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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