2SK410
SILICON N-CHANNEL MOS FET
PACKAGE STYLE .500 6L FLG
A
C
DESCRIPTION:
1
3
2x ØN
FULL R
The ASI 2SK410 is a silicon n-channel mos fet
designed for HF/VHF power amplifier
applications.
D
G
4
2
B
E
.725/18,42
F
FEATURES:
M
• PG = 17 dB typ. at 100 W/28 MHz
• Omnigold™ Metalization System
• Common Source configuration
• RoHS compliant
K
H
I
L
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
MAXIMUM RATINGS
ID
8 A
.125 / 3.18
VDSS
VGSS
PCH
TCH
180 V
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
±20 V
K
L
120 W @ TC = 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
M
N
.120 / 3.05
TSTG
1 = COLLECTOR
2 = BASE
3&4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
V(BR)DSS
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IG = ±100 µA
ID = 1.0 mA
VDSS = 180 V
ID = 4.0 A
180
±20
0.5
V
V(BR)GSS
VGS(OFF)
IDSS
VDS = 0 V
VDS = 10 V
VGS = 0 V
VGS = 10 V
VDS = 20 V
V
3.0
1.0
6.0
V
mA
V
VDS(on)
|γfs|
3.8
ID = 3.0 A
0.9
1.25
S
CISS
COSS
CRSS
VGS = 5.0 V
VDS = 0.0 V
VDS = 50. V
VGD = - 50. V
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
350
220
15
VGS = -5.0 V
pF
VGS
=
POUT
VDD = 80 V
DQ =100 mA
f = 28 MHz
PIN = 5 W
140
W
%
I
η
80
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
