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2SK2090

型号:

2SK2090

描述:

N沟道MOS FET,用于高速开关[ N-Channel MOS FET FOR HIGH-SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

61 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2090  
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING  
The2SK2090isanN-channelverticalMOSFET. Because  
it can be driven by a voltage as low as 2.5 V and it is not  
necessary to consider a drive current, this FET is ideal as an  
actuatorfor low-currentportablesystemssuchasheadphone  
stereos and video cameras.  
PACKAGE DIMENSIONS (in mm)  
2.1 ±0.1  
1.25 ±0.1  
G
S
FEATURES  
D
Gate can be driven by 2.5 V  
Because of its high input impedance, there’s no need to  
consider drive current  
Marking  
Marking: G22  
EQUIVALENT CURCUIT  
Drain (D)  
Internal  
diode  
Gate (G)  
Gate  
protection  
diode  
PIN  
CONNECTIONS  
S: Source  
D: Drain  
G: Gate  
Source (S)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
SYMBOL  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
TEST CONDITIONS  
RATING  
UNIT  
V
VGS = 0  
VDS = 0  
50  
±7.0  
V
±100  
mA  
mA  
mW  
˚C  
Drain Current (Pulse)  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PW 10 ms, duty cycle 50 %  
±200  
150  
Tch  
150  
Tstg  
–55 to +150  
˚C  
Document No. D11228EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©
2SK2090  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
PARAMETER  
Drain Cut-Off Current  
Gate Leakage Current  
Gate Cut-Off Voltage  
Forward Transfer Admittance  
Drain to Source On-State Resistance  
Drain to Source On-State Resistance  
Input Capacitance  
SYMBOL  
TEST CONDITIONS  
VDS = 50 V, VGS = 0  
MIN.  
TYP.  
1.0  
MAX.  
1.0  
UNIT  
µA  
µA  
V
IDSS  
IGSS  
VGS = ±7.0 V, VDS = 0  
±5.0  
1.5  
VGS(off)  
|yfs|  
VDS = 3.0 V, ID = 1.0 µA  
VDS = 3 V, ID = 10 mA  
0.7  
20  
mS  
RDS(on)1  
RDS(on)2  
Ciss  
VGS = 2.5 V, ID = 10 mA  
VGS = 4.0 V, ID = 10 mA  
VDS = 3 V, VGS = 0, f = 1.0 MHz  
20  
15  
6
40  
20  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Output Capacitance  
Coss  
8
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Crss  
1.2  
9
td(on)  
tr  
VDD = 3 V, ID = 20 mA, VGS(on) = 3 V,  
RG = 10 , RL = 120 Ω  
50  
20  
40  
Turn-OFF Delay Time  
Fall Time  
td(off)  
tf  
2
2SK2090  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
100  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
100  
80  
60  
40  
20  
80  
60  
40  
20  
3.0 V  
4.0 V  
3.5 V  
2.5 V  
V
GS = 2.0 V  
0
30  
60  
90  
120  
150  
0
1
2
3
4
5
T
A
- Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
TRANSFER CHARACTERISTICS  
100  
10  
1
100  
50  
V
DS = 3 V  
VDS = 3 V  
T
A
= –25˚ C  
25˚ C  
T
A
= 75˚C  
25˚C  
125 ˚C  
–25˚C  
0.1  
20  
10  
0.01  
0.001  
0
1
2
3
1
2
5
10  
20  
50  
100  
V
GS - Gate to Source Voltage - V  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
100  
50  
100  
50  
VGS = 2.5 V  
VGS = 4 V  
T
A
= 75 ˚C  
25 ˚C  
T
A
= 75 ˚C  
25 ˚C  
20  
10  
5
20  
10  
5
–25 ˚C  
–25 ˚C  
2
1
2
1
1
2
5
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
I
D
- Drain Current - mA  
I
D
- Drain Current - mA  
3
2SK2090  
DRAIN TO SOURCE ON-STAGE RESISTANCE  
vs. GATE TO SOURCE VOLTAGE  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
30  
20  
10  
10  
5
ID = 10 mA  
C
iss  
I
D
= 1 mA  
10 mA  
50 mA  
Coss  
2
1
0.5  
Crss  
0.2  
0.1  
V
GS = 0  
f = 1 MHz  
1
2
3
4
5
6
7
1
2
5
10  
20  
50  
100  
V
GS - Gate to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
100  
50  
t
r
t
f
20  
10  
5
t
d(off)  
10  
t
d(on)  
V
V
R
DD = 3 V  
GS(on) = 3 V  
2
1
G
= 10  
1
0
0.2  
0.4  
0.6  
0.8  
1.0  
20  
50  
100 200  
500 1000  
10  
I
D
- Drain Current - mA  
VSD - Source to Drain Voltage - V  
4
2SK2090  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system  
Quality grade on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Guide to quality assurance for semiconductor devices  
Semiconductor selection guide  
TEI-1202  
IEI-1209  
C10535E  
MEI-1202  
X10679E  
5
2SK2090  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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