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2SK2112

型号:

2SK2112

描述:

N沟道MOS FET,用于高速开关[ N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

61 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2112  
N-CHANNEL MOS FET  
FOR HIGH-SPEED SWITCHING  
The 2SK2112 is a N-channel MOS FET of a vertical type and  
PACKAGE DIMENSIONS (in mm)  
is a switching element that can be directly driven by the output of  
an IC operating at 5 V.  
4.5 ± 0.1  
1.5 ± 0.1  
1.6 ± 0.2  
This product has a low ON resistance and superb switching  
characteristics and is ideal for driving the actuators, such as  
motors and DC/DC converters.  
D
S
G
0.42  
±0.06  
0.42  
±0.06  
0.47  
1.5  
FEATURES  
±0.06  
+0.03  
0.41  
–0.05  
3.0  
Low ON resistance  
RDS(on) = 1.2 MAX. @VGS = 4.0 V, ID = 0.5 A  
High switching speed  
EQUIVALENT CIRCUIT  
ton + toff < 100 ns  
Drain (D)  
Low parasitic capacitance  
Gate (G)  
Internal diode  
Gate protection  
diode  
PIN CONNECTIONS  
S: Source  
D: Drain  
Source (S)  
G: Gate  
Marking: NV  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
SYMBOL  
VDSS  
TEST CONDITIONS  
RATING  
UNIT  
VGS = 0  
VDS = 0  
100  
±20  
V
V
A
A
VGSS  
ID(DC)  
±1.0  
±2.0  
Drain Current (Pulse)  
ID(pulse)  
PW 10 ms,  
Duty cycle 50 %  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
16 cm2 × 0.7 mm, ceramic substrate used  
2.0  
W
Tch  
Tstg  
150  
˚C  
–55 to +150  
˚C  
Document No. D11232EJ2V0DS00 (2nd edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
2SK2112  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
PARAMETER  
Drain Cut-Off Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 100 V, VGS = 0  
MIN.  
TYP.  
1.5  
MAX.  
1.0  
UNIT  
µA  
µA  
V
Gate Leakage Current  
Gate Cut-Off Voltage  
Forward Transfer Admittance  
Drain to Source On-State Resistance  
Drain to Source On-State Resistance  
Input Capacitance  
IGSS  
VGS = ±20 V, VDS = 0  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 0.5 A  
VGS = 4.0 V, ID =0.5 A  
VGS = 10 V, ID = 0.5 A  
±10  
2.0  
VGS(off)  
|yfs|  
0.8  
0.4  
S
RDS(on)1  
RDS(on)2  
Ciss  
0.58  
0.50  
178  
59  
1.2  
0.8  
VDS = 10 V, VGS = 0,  
f = 1.0 MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Output Capacitance  
Coss  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
16  
td(on)  
tr  
VDD = 25 V, ID = 0.5 A  
2.9  
1.7  
60  
VGS(on) = 10 V, RG = 10 Ω  
Rise Time  
RL = 50 Ω  
Turn-Off Delay Time  
td(off)  
tf  
Fall Time  
15  
2
2SK2112  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
FORWARD BIAS SAFE OPERATING AREA  
10  
5
100  
80  
60  
40  
20  
2
1
0.5  
0.2  
0.1  
Single pulse  
1
2
5
10  
20  
50  
100  
0
30  
60  
90  
120  
150  
2.0  
1
V
DS - Drain to Source Voltage - V  
TA  
- Ambient Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
TRANSFER CHARACTERISTICS  
1
0.1  
1.0  
V
DS = 10 V  
10 V  
2.5 V  
0.8  
0.6  
0.4  
0.2  
4.5 V  
4.0 V  
3.5 V  
3.0 V  
T
A
= 75 ˚C  
25 ˚C  
–25 ˚C  
0.01  
VGS = 2.0 V  
0.001  
0.0001  
0.5  
1
1.5  
2
2.5  
3
0
0.4  
0.8  
1.2  
1.6  
V
GS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
10  
1
1.5  
1
V
DS = 10 V  
VGS = 4 V  
T = –25 ˚C  
A
TA  
= 75 ˚C  
25 ˚C  
75 ˚C  
25 ˚C  
0.5  
0
0.1  
–25 ˚C  
0.01  
0.001  
0.01  
0.1  
0.01  
0.1  
1
10  
ID  
- Drain Current - A  
ID - Drain Current - A  
3
2SK2112  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
1.5  
1
V
GS = 10 V  
ID = 0.5 A  
1
0.5  
0
T
A
= 75 ˚C  
0.5  
25 ˚C  
–25 ˚C  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
VGS - Gate to Source Voltage - V  
ID - Drain Current - A  
CAPACITANCE vs.  
DRAIN TO SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
500  
100  
50  
VGS = 0  
f = 1 MHz  
td(off)  
200  
100  
50  
C
iss  
20  
10  
5
t
f
C
oss  
20  
Crss  
td(on)  
2
1
10  
5
t
r
VDD = 25 V  
VGS(on) = 10 V  
0.1 0.2 0.5  
1
2
5
10 20  
50 100  
0.05 0.1  
0.2  
0.5  
1
2
5
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
SOURCE TO DRAIN DIODE  
FORWARD VOLTGE  
1
0.1  
0.01  
0.001  
0.0001  
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
VSD - Source to Drain Voltage - V  
4
2SK2112  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system  
Quality grade on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Guide to quality assurance for semiconductor devices  
Semiconductor selection guide  
TEI-1202  
IEI-1209  
C10535E  
MEI-1202  
X10679E  
5
2SK2112  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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