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2SK2159

型号:

2SK2159

描述:

N沟道MOS FET,用于高速开关[ N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

64 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2159  
N-CHANNEL MOS FET  
FOR HIGH-SPEED SWITCHING  
The 2SK2159 is an N-channel vertical type MOS FET featur-  
PACKAGE DIMENSIONS  
ing an operating voltage as low as 1.5 V. Because it can be  
driven on a low voltage and it is not necessary to consider  
driving current, the 2SK2159 is suitable for driving actuators of  
low-voltage portable systems such as headphone stereo sets  
and camcorders.  
(in millimeters)  
4.5 ± 0.1  
1.6 ± 0.2  
1.5 ± 0.1  
2
1
3
0.42  
FEATURES  
0.42 ± 0.06  
± 0.06  
0.47  
1.5  
± 0.06  
Capable of drive gate with 1.5 V  
Small RDS(on)  
+0.03  
0.41  
–0.05  
3.0  
RDS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A  
RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A  
EQUIVALENT CIRCUIT  
2
Internal diode  
3
Gate protection  
diode  
PIN CONNECTION  
1. Source (S)  
2. Drain (D)  
1
3. Gate (G)  
Marking: NW  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
SYMBOL  
VDSS  
TEST CONDITIONS  
RATINGS  
60  
UNIT  
VGS = 0  
VDS = 0  
V
V
A
A
VGSS  
±14  
ID(DC)  
±2.0  
Drain Current (pulse)  
ID(pulse)  
PW 10 ms,  
±4.0  
Duty Cycle 50 %  
2
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
Tch  
Tstg  
Mounted on 16 cm × 0.7 mm ceramic substrate.  
2.0  
150  
W
˚C  
˚C  
–55 to +150  
Document No. D11235EJ2V0DS00 (2nd edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©
2SK2159  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
PARAMETER  
Drain Cut-off Current  
Gate Leakage Current  
Gate Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Drain to Source On-state Resistance  
Drain to Source On-state Resistance  
Input Capacitance  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 60 V, VGS = 0  
MIN.  
TYP.  
0.9  
MAX.  
1.0  
UNIT  
µA  
µA  
V
IGSS  
VGS = ±14 V, VDS = 0  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 1.0 A  
VGS = 1.5 V, ID = 0.1 A  
VGS = 2.5 V, ID = 1.0 A  
VGS = 4.0 V, ID = 1.0 A  
±10  
1.1  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
0.5  
0.4  
S
0.55  
0.27  
0.22  
319  
109  
22  
0.7  
0.5  
0.3  
VDS = 10 V, VGS = 0,  
f = 1.0 MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Output Capacitance  
Coss  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
td(on)  
VDD = 25 V, ID = 1.0 A  
VGS(on) = 3 V, RG = 10 Ω  
RL = 25 Ω  
38  
Rise Time  
tr  
128  
237  
130  
Turn-Off Delay Time  
td(off)  
Fall Time  
tf  
2
2SK2159  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
FORWARD BIAS SAFE OPERATING AREA  
10  
5
100  
80  
60  
40  
20  
Single pulse  
2
1
0.5  
0.2  
0.1  
0
30  
60  
90  
120  
150  
1
2
5
10  
20  
50  
100  
T
A
- Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
TRANSFER CHARACTERISTICS  
DS = 10 V  
5
4
3
2
1
10  
1
V
T
A
= 75 °C  
25 ° C  
–25 °C  
0.1  
1.5 V  
0.01  
V
GS = 1.0 V  
0.001  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
1
2
3
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
10  
1
VGS = 1.5 V  
VDS = 10 V  
1.4  
1.2  
1
T
A
= –25 °C  
25 °C  
0.8  
0.6  
0.4  
75 °C  
T
A
= 75 °C  
25 °C  
–25 °C  
0.1  
0.2  
0
0.01  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
- Drain Current - A  
1
10  
I
D
- Drain Current - A  
I
D
3
2SK2159  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
VGS = 2.5 V  
VGS = 4.0 V  
1.4  
1.4  
1.2  
1.0  
0.8  
1.2  
1.0  
0.8  
0.6  
0.4  
0.6  
0.4  
TA = 75 °C  
25 °C  
–25 °C  
TA = 75 °C  
25 °C  
–25 °C  
0.2  
0
0.2  
0
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
ID - Drain Current - A  
ID - Drain Current - A  
CAPACITANCE vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. GATE TO SOURCE VOLTAGE  
1 000  
500  
1
0.8  
Ciss  
200  
100  
0.6  
0.4  
0.2  
Coss  
50  
ID = 2 A  
ID = 1 A  
20  
10  
VGS = 0  
f = 1 MHz  
Crss  
0
2
4
6
8
10  
12  
14  
1
2
5
10  
20  
50  
100  
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
SWITCHING CHARACTERISTICS  
10  
1
1 000  
500  
td(off)  
200  
100  
tr  
tf  
0.1  
td(on)  
50  
0.01  
VDD = 25 V  
20  
10  
V
GS(on) = 3 V  
RG = 10 Ω  
0.001  
0.1  
0.2  
0.5  
1
2
5
10  
0.4  
0.6  
0.8  
1.0  
1.2  
ID - Drain Current - A  
VSD - Source to Drain Voltage - V  
4
2SK2159  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system  
Quality grade on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Guide to quality assurance for semiconductor devices  
Semiconductor selection guide  
TEI-1202  
IEI-1209  
C10535E  
MEI-1202  
X10679E  
5
2SK2159  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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