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2SK2195

型号:

2SK2195

描述:

VX - 2系列功率MOSFET ( 500V 15A )[ VX-2 Series Power MOSFET(500V 15A) ]

品牌:

SHINDENGEN[ SHINDENGEN ELECTRIC MFG.CO.LTD ]

页数:

10 页

PDF大小:

394 K

SHINDENGEN  
VX-2 Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2195  
Case : ITO-3P  
(Unit : mm)  
(FP15W50VX2)  
500V 15A  
FEATURES  
●Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
●The static Rds(on) is small.  
●The switching time is fast.  
APPLICATION  
●Switching power supply of AC 100V input  
●High voltage power supply  
●Inverter  
RATINGS  
●Absolute Maximum Ratings (Tc = 25℃)  
Item  
Symbol  
Tstg  
Tch  
VDSS  
VGSS  
ID  
IDP  
IS  
PT  
IAS  
Vdis  
Conditions  
Ratings  
Unit  
℃
Storage Temperature  
-55~150  
150  
500  
±30  
15  
Channel Temperature  
Drain-Source Voltage  
V
A
Gate-Source Voltage  
Continuous Drain Current(DC)  
Continuous Drain Current(Peak)  
Continuous Source Current(DC)  
Total Power Dissipation  
Single Pulse Avalanche Current  
Dielectric Strength  
45  
15  
60  
15  
2
0.8  
W
A
kV  
N・m  
Tch = 25℃  
Terminals to case, AC 1 minute  
Mounting Torque  
TOR ( Recommended torque : 0.5N・m )  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2195 ( FP15W50VX2 )  
VX-2 Series Power MOSFET  
●Electrical Characteristics Tc = 25℃  
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Forward Transconductance  
V(BR)DSS ID = 1mA, VGS = 0V  
500  
V
μA  
IDSS  
IGSS  
gfs  
VDS = 500V, VGS = 0V  
VGS = ±30V, VDS = 0V  
ID = 7.5A, VDS = 10V  
250  
±0.1  
10  
0.35 0.45  
4.5  
2.5  
S
Ω
V
Static Drain-Source On-state Resistance RDS(ON) ID = 7.5A, VGS = 10V  
Gate Threshold Voltage  
Source-Drain Diode Forwade Voltage  
Thermal Resistance  
VTH  
VSD  
ID = 1mA, VDS = 10V  
3.0  
3.5  
1.5  
IS = 7.5A, VGS = 0V  
θjc junction to case  
2.08 ℃/W  
Total Gate Charge  
Qg  
Ciss  
Crss  
Coss  
ton  
VDD = 400V, VGS = 10V, ID = 15A  
65  
1900  
135  
400  
110 180  
270 440  
nC  
Input Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Turn-On Time  
VDS = 10V, VGS = 0V, f = 1MHZ  
ID = 7.5A, VGS = 10V, RL = 20Ω  
pF  
ns  
Turn-Off Time  
toff  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2195  
Transfer Characteristics  
30  
25  
20  
15  
10  
5
Tc = - 55°C  
25°C  
100°C  
150°C  
V
DS  
= 25V  
pulse test  
TYP  
0
0
5
10  
15  
20  
Gate-Source Voltage VGS [V]  
2SK2195 Static Drain-Source On-state Resistance  
1
I = 7.5A  
D
0.1  
V
GS  
= 10V  
pulse test  
TYP  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2195  
Gate Threshold Voltage  
5
4
3
2
1
0
V
= 10V  
DS  
I = 1mA  
D
TYP  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2195  
Safe Operating Area  
100  
10  
100ms  
200ms  
R
DS(ON)  
limit  
1ms  
10ms  
DC  
1
0.1  
Tc = 25°C  
Single Pulse  
0.01  
1
10  
100  
1000  
Drain-Source Voltage VDS [V]  
C ° / W ] j c q ( t ) [  
T r a n s i e n t T h e r m a l I m p e d  
2SK2195  
Capacitance  
10000  
1000  
100  
Ciss  
Coss  
Crss  
Tc=25°C  
TYP  
10  
0
20  
40  
60  
80  
100  
Drain-Source Voltage VDS [V]  
2SK2195  
Power Derating  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2195  
Gate Charge Characteristics  
500  
400  
300  
200  
100  
0
20  
15  
10  
5
V
DS  
V
DD  
= 400V  
200V  
100V  
V
GS  
I = 15A  
D
0
100  
0
20  
40  
60  
80  
Gate Charge Qg [nC]  
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