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2SK2316

型号:

2SK2316

描述:

超高速开关应用[ Ultrahigh-Speed Switching Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

147 K

Ordering number : EN5300A  
N-Channel Silicon MOSFET  
2SK2316  
Ultrahigh-Speed Switching Applications  
Features  
• Low ON resistance.  
Package Dimensions  
unit: mm  
• Ultrahigh-speed switching.  
2062A-PCP  
• Low-voltage drive (2.5V drive).  
[2SK2316]  
1 : Gate  
2 : Drain  
3 : Source  
SANYO: PCP  
Bottom View)  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
20  
±10  
2
DSS  
GSS  
V
I
D
I
A
Drain Current (Pulse)  
Allowable Power Dissipation  
PW10µd, duty cycle1%  
Mounted on ceramic board  
(250mm2×0.8mm)  
8
A
DP  
P
1.5  
W
D
Tc=25°C  
3.5  
W
°C  
°C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
20  
typ  
max  
D-S Breakdown Voltage  
G-S Breakdown Voltage  
Zero-Gate Voltage  
Drain Current  
V
V
I =1mA, V =0  
GS  
V
V
(BR)DSS  
(BR)GSS  
DSS  
D
I =±100µA, V =0  
±10  
G
DS  
I
V
=16V, V =0  
GS  
100  
µA  
DS  
Gate-to-Source Leakage Current I  
V
V
V
=±8V, V =0  
DS  
±10  
1.5  
µA  
V
GSS  
GS  
DS  
DS  
Cutoff Voltage  
V
=10V, I =1mA  
0.5  
1.8  
GS(off)  
D
Forward Transfer Admittance  
Static Drain-to-Source  
ON-State Resistance  
Input Capacitance  
y
=10V, I =1A  
2.8  
140  
200  
170  
145  
50  
S
fs  
D
R
R
I =1A, V =4V  
D
I =1A, V =2.5V  
D
V
200  
320  
mΩ  
mΩ  
pF  
pF  
pF  
DS(on)  
GS  
DS(on)  
GS  
Ciss  
Coss  
Crss  
=10V, f=1MHz  
DS  
DS  
DS  
Output Capacitance  
V
V
=10V, f=1MHz  
=10V, f=1MHz  
Reverse Transfer Capacitance  
Continued on next page.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN  
11697YK (KOTO) TA-0121 No.5300-1/4  
2SK2316  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Turn-ON Delay Time  
Rise Time  
t
t
t
t
See specified Test Circuit.  
15  
ns  
ns  
ns  
ns  
V
d(on)  
20  
r
Turn-OFF Delay Time  
Fall Time  
50  
d(off)  
f
35  
Diode Forward Voltage  
V
I =2A, V =0  
S GS  
1.0  
SD  
Making : KP  
Switching Time Test Circuit  
No.5300-2/4  
2SK2316  
No.5300-3/4  
2SK2316  
No products described or contained herein are intended for use in surgical implants, life-support systems,  
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and  
the like, the failure of which may directly or indirectly cause injury, death or property lose.  
Anyone purchasing any products described or contained herein for an above-mentioned use shall:  
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,  
subsidiaries and distributors and all their officers and employees, jointly and severally, against any  
and all claims and litigation and all damages, cost and expenses associated with such use:  
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or  
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of  
their officers and employees jointly or severally.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-  
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees  
are made or implied regarding its use or any infringements of intellectual property rights or other rights of  
third parties.  
This catalog provides information as of January, 1997. Specifications and information herein are subject  
to change without notice.  
No.5300-4/4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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