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2SK2475

型号:

2SK2475

描述:

VX - 2系列功率MOSFET ( 500V 12A )[ VX-2 Series Power MOSFET(500V 12A) ]

品牌:

SHINDENGEN[ SHINDENGEN ELECTRIC MFG.CO.LTD ]

页数:

10 页

PDF大小:

371 K

SHINDENGEN  
VX-2 Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2475  
(F12F50VX2)  
ase:FTO-220  
(Unit : mm)  
500V 12A  
FEATURES  
Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
The static Rds(on) is small.  
The switching time is fast.  
APPLICATION  
Switching power supply of AC 100V input  
High voltage power supply  
Inverter  
RATINGS  
Absolute Maximum Ratings Tc = 25℃)  
Item  
Symbol  
Conditions  
Ratings Unit  
-55~150 ℃  
150  
stg  
StorageTemperature  
T
T
ch  
ChannelTemperature  
DSS  
Drain-SourceVoltage  
V
500  
±30  
12  
36  
12  
50  
12  
2
0.5  
V
Gate-SourceVoltage  
VGSS  
D
I
DP  
I
S
I
PT  
AS  
I
ContinuousDrainCurrentDC)  
ContinuousDrainCurrentPeak)  
ContinuousSourceCurrentDC)  
TotalPowerDissipation  
SinglePulseAvalancheCurrent  
DielectricStrength  
A
W
ch  
T =25℃  
A
dis  
V
Terminalstocase, AC 1minute  
kV  
Nm  
MountingTorque  
TOR Recommendedtorque: 0.3Nm )  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2475 ( F12F50VX2 )  
VX-2 Series Power MOSFET  
Electrical Characteristics Tc = 25℃  
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Forward Tranconductance  
V(BR)DSS ID = 1mA, VGS = 0V  
500  
V
μA  
IDSS  
IGSS  
gfs  
VDS = 500V, VGS = 0V  
VGS = ±30V, VDS = 0V  
ID = 6A, VDS = 10V  
250  
±0.1  
7.6  
0.55 0.7  
3.0  
2.5  
S
Ω
V
Static Drain-Source On-tate Resistance RDS(ON) ID = 6A, VGS = 10V  
Gate Threshold Voltage  
Source-Drain Diode Forwade Voltage  
Themal Resistance  
VTH  
VSD  
ID = 1mA, VDS = 10V  
3.0  
3.5  
1.5  
IS = 6A, VGS = 0V  
θjc junction to case  
2.5 /W  
nC  
Total Gate Charge  
Qg  
Ciss  
Crss  
Coss  
ton  
VDD = 400V, VGS = 10V, ID = 12A  
42  
1200  
90  
270  
90  
Input Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Turn-On Time  
VDS = 10V, VGS = 0V, f = 1MHZ  
ID = 6A, VGS = 10V, RL = 25Ω  
pF  
130  
ns  
Turn-Off Time  
toff  
190 280  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2475  
Transfer Characteristics  
25  
20  
15  
10  
5
Tc = - 55°C  
25°C  
100°C  
150°C  
V
DS  
= 25V  
pulse test  
TYP  
0
0
5
10  
15  
20  
Gate-Source Voltage VGS [V]  
2SK2475 Static Drain-Source On-state Resistance  
1
I = 6A  
D
V
GS  
= 10V  
pulse test  
TYP  
0.1  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2475  
Gate Threshold Voltage  
5
4
3
2
1
0
V
= 10V  
DS  
I = 1mA  
D
TYP  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2475  
Safe Operating Area  
100  
10  
100ms  
200ms  
R
DS(ON)  
limit  
1ms  
1
10ms  
DC  
0.1  
Tc = 25°C  
Single Pulse  
0.01  
1
10  
100  
1000  
Drain-Source Voltage VDS [V]  
C ° / W ] j c q ( t ) [  
T r a n s i e n t T h e r m a l I m p e d  
2SK2475  
Capacitance  
Ciss  
1000  
100  
10  
Coss  
Crss  
Tc=25°C  
TYP  
0
20  
40  
60  
80  
100  
Drain-Source Voltage VDS [V]  
2SK2475  
Power Derating  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2475  
Gate Charge Characteristics  
500  
400  
300  
200  
100  
0
20  
15  
10  
5
V
DS  
V
= 400V  
200V  
DD  
100V  
V
GS  
I = 12A  
D
0
100  
0
20  
40  
60  
80  
Gate Charge Qg [nC]  
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PANASONIC

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