请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK2482

型号：

2SK2482

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

67 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2482  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2482 is N-Channel MOS Field Effect Transistor designed  
for high voltage switching applications.  
(in m illim eter)  
FEATURES  
4.7 MAX.  
1.5  
15.7 MAX. 3.2±0.2  
4
•
Low On-Resistance  
RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A)  
•
•
Low Ciss  
Ciss = 900 pF TYP.  
High Avalanche Capability Ratings  
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID (DC)  
ID (pulse)  
PT1  
900  
±30  
±5.0  
±12  
100  
3.0  
V
V
Gate to Source Voltage  
2.2±0.2  
1.0±0.2  
0.6±0.1  
2.8±0.1  
Drain Current (DC)  
A
5.45  
5.45  
1. Gate  
Drain Current (pulse)*  
A
2. Drain  
3. Source  
4. Fin (Drain)  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Tem perature  
W
W
˚C  
PT2  
Tch  
150  
MP-88  
Storage Tem perature  
Tstg –55 to +150 ˚C  
Drain  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
5.0  
A
EAS  
73.5  
m J  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
Body  
Diode  
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0  
Gate  
Source  
Document No. D10274EJ1V0DS00 (1st edition)  
Date Published August 1995 P  
Printed in Japan  
1995  
©
2SK2482  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Adm ittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
SYMBOL MIN.  
TYP.  
3.2  
MAX.  
4.0  
UNIT  
TEST CONDITIONS  
Ω
RDS (on)  
VGS = 10 V, ID = 3.0 A  
VDS = 10 V, ID = 1 m A  
VDS = 20 V, ID = 3.0 A  
VDS = VDSS, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
VGS (off)  
| yfs |  
IDSS  
2.5  
1.0  
3.5  
V
S
µA  
100  
IGSS  
±100  
nA  
pF  
pF  
pF  
ns  
Ciss  
900  
130  
25  
Output Capacitance  
Coss  
Crss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Tim e  
f = 1 MHz  
td (on)  
tr  
17  
ID = 3.0 A  
Rise Tim e  
8
ns  
VGS = 10 V  
Turn-Off Delay Tim e  
Fall Tim e  
td (off)  
tf  
60  
10  
ns  
VDD = 150 V  
RG = 10 Ω  
ns  
Total Gate Charge  
QG  
30  
5
nC  
nC  
nC  
V
ID = 5.0 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
VDD = 450 V  
VGS = 10 V  
QGD  
VF (S-D)  
13  
1.0  
IF = 5.0 A, VGS = 0  
Reverse Recovery Tim e  
Reverse Recovery Charge  
trr  
780  
4.2  
ns  
IF = 5.0 A, VGS = 0  
di/dt = 50 A/µs  
Qrr  
µC  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Sw itching Tim e  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
RG  
= 25 Ω  
90 %  
V
GS  
Wave Form  
VGS (on)  
10 %  
R
G
0
PG  
GS = 20 - 0 V  
PG.  
50 Ω  
R = 10 Ω  
G
VDD  
VDD  
V
ID  
90 %  
90 %  
10 %  
ID  
V
GS  
BVDSS  
10 %  
I
D
0
0
Wave Form  
IAS  
VDS  
t
d
(on)  
t
r
t
d
(off)  
t
f
ID  
t
VDD  
t
on  
t
off  
t = 1 us  
Duty Cycle ≤ 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
I = 2 mA  
G
RL  
PG.  
50  
Ω
VDD  
The application circuits and their param eters are for references only and are not intended for use in actual design-in's.  
2
2SK2482  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
140  
120  
100  
80  
100  
80  
60  
60  
40  
40  
20  
20  
0
20  
40  
60  
80 100 120 140 160  
0
20  
40  
60  
80 100 120 140 160  
TC  
- Case Temperature - ˚C  
TC  
- Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
Pulsed  
10  
ID(pulse)  
VGS = 20 V  
µ
10 V  
8 V  
ID(DC)  
6 V  
5
1
T
C
= 25 ˚C  
Single Pulse  
0.1  
20  
40  
0
30  
10  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
100  
10  
VDS = 10 V  
TA  
= –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
1.0  
0.1  
0
5
10  
15  
VGS - Gate to Source Voltage - V  
3
2SK2482  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 41.7 (˚C/W)  
R
th(ch-c) = 1.25 (˚C/W)  
1
0.1  
0.01  
Single Pulse  
Tc  
= 25 ˚C  
0.001  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100 1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
V
DS = 20 V  
Pulsed  
Pulsed  
10  
TA  
= –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
ID  
= 5 A  
2.5 A  
1 A  
1.0  
0.1  
5
0.01  
0.1  
1.0  
10  
0
10  
20  
30  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
8
Pulsed  
GS=10 V  
VDS = 10 V  
V
ID  
= 1 mA  
7
6
5
4
3
2
1
0
5
0
–50  
0
50  
100  
150  
0.1  
1.0  
10  
100  
Tch - Channel Temperature - ˚C  
ID  
- Drain Current - A  
4
2SK2482  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
100  
10  
1
5
VGS = 10 V  
VGS = 0 V  
VGS = 10 V  
ID = 3 A  
0.1  
0
0
0
–50  
1.5  
0.5  
1.0  
100  
150  
50  
Tch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
1 000  
100  
VGS = 0  
f = 1 MHz  
Ciss  
td(on)  
tr  
td(off)  
tf  
100  
10  
10  
VDD = 150 V  
VGS = 10 V  
RG = 10 Ω  
Coss  
Crss  
1.0  
0.1  
1.0  
10  
100  
1000  
1.0  
10  
100  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
ID = 5.0 A  
10 000  
1 000  
16  
14  
12  
10  
8
di/dt = 50 A/µs  
VGS = 0  
VDD = 450 V  
300 V  
150 V  
6
100  
10  
4
2
0
0.1  
1.0  
10  
100  
0
4
8
12  
16  
20  
24  
28  
32  
ID - Drain Current - A  
Qg - Gate Charge - nC  
5
2SK2482  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
160  
140  
V
DD = 150 V  
= 25 Ω  
GS = 20 V → 0  
R
G
V
≥
AS 5.0 A  
I
120  
100  
IAS = 5 A  
80  
60  
1.0  
0.1  
40  
VDD = 150 V  
VGS = 20 V → 0  
RG = 25 Ω  
20  
0
100 µ  
1 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
2SK2482  
REFERENCE  
Docum ent Nam e  
Docum ent No.  
NEC sem iconductor device reliability/quality control system .  
Quality grade on NEC sem iconductor devices.  
Sem iconductor device m ounting technology m anual.  
Sem iconductor device package m anual.  
TEI-1202  
IEI-1209  
IEI-1207  
IEI-1213  
Guide to quality assurance for sem iconductor devices.  
Sem iconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
7
2SK2482  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.209752s