VZ Series Power MOSFET
2SK2492 ( F20F18VZ )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Transconductance
V(BR)DSS ID = 1mA, VGS = 0V
180
V
μA
IDSS
IGSS
gfs
VDS = 180V, VGS = 0V
250
±0.1
15
0.08 0.13
VGS = ±30V, VDS = 0V
ID = 10A, VDS = 10V
8
S
Ω
V
Static Drain-Source On-state Resistance RDS(ON) ID =10A, VGS = 10V
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
IS = 10A, VGS = 0V
2.0
3.0
4.0
1.5
θjc junction to case
2.08 ℃/W
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 150V, VGS = 10V, ID = 20A
55
1600
190
650
95
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 10A, VGS = 10V, RL = 10Ω
pF
190
ns
Turn-Off Time
toff
300 600
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