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2SK2510

型号：

2SK2510

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

83 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2510  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
(in millimeter)  
The 2SK2510 is N-Channel MOS Field Effect Transistor designed  
for high current switching applications.  
FEATURES  
10.0±0.3  
4.5±0.2  
3.2±0.2  
•
Super Low On-Resistance  
2.7±0.2  
RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A)  
RDS (on)2 = 30 mΩ (VGS = 4 V, ID = 20 A)  
•
•
Low Ciss  
Ciss = 1 600 pF TYP.  
Built-in G-S Protection Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±40  
±160  
35  
V
V
A
Drain Current (pulse)*  
A
0.7±0.1  
2.54  
1.3±0.2  
2.5±0.1  
0.65±0.1  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
1.5±0.2  
2.54  
PT2  
2.0  
Tch  
150  
1. Gate  
2. Drain  
3. Source  
Storage Temperature  
Tstg –55 to +150 ˚C  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
1
2 3  
MP-45F (ISOLATED TO-220)  
Drain  
Body  
Diode  
Gate  
The diode connected between the gate and source of the transistor  
Gate  
Protection  
Diode  
serves as a protector against ESD. When this device is actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Source  
Document No. D10290EJ1V0DS00 (1st edition)  
Date Published August 1995  
Printed in Japan  
P
1995  
©
2SK2510  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-Resistance  
Drain to Source On-Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
SYMBOL  
RDS (on)1  
RDS (on)2  
VGS (off)  
| yfs |  
IDSS  
MIN.  
TYP.  
16  
MAX.  
20  
UNIT  
TEST CONDITIONS  
VGS = 10 V, ID = 20 A  
VGS = 4 V, ID = 20 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 20 A  
VDS = VDSS, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
mΩ  
mΩ  
V
24  
30  
1.0  
13  
1.5  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Gate to Source Leakage Current  
Input Capacitance  
IGSS  
±10  
Ciss  
1 600  
780  
350  
35  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td (on)  
ID = 20 A  
Rise Time  
tr  
380  
220  
VGS (on) = 10 V  
VDD = 30 V  
Turn-Off Delay Time  
td (off)  
Fall Time  
tf  
300  
69  
RG = 10 Ω  
Total Gate Charge  
QG  
ID = 40 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
QGS  
QGD  
VF (S-D)  
trr  
5.0  
26  
VDD = 48 V  
VGS = 10 V  
1.0  
72  
IF = 40 A, VGS = 0  
IF = 40 A, VGS = 0  
ns  
nC  
Reverse Recovery Charge  
Qrr  
130  
di/dt = 100 A/µs  
Test Circuit 1 Switching Time  
Test Circuit 2 Gate Charge  
D.U.T.  
D.U.T.  
= 2 mA  
V
GS  
IG  
R
L
RL  
90 %  
V
GS  
Wave Form  
V
GS (on)  
10 %  
R
G
0
PG.  
PG.  
RG  
= 10 Ω  
50 Ω  
VDD  
VDD  
I
D
90 %  
90 %  
10 %  
I
D
V
0
GS  
10 %  
I
D
0
Wave Form  
t
d (on)  
t
r
t
d (off)  
t
f
t
t
on  
t
off  
t = 1 µs  
Duty Cycle ≤ 1 %  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2510  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
Pulsed  
200  
100  
VGS = 20 V  
I
D(pulse)  
I
D(DC)  
µ
VGS = 10 V  
VGS = 4 V  
10  
1
T
C
= 25 ˚C  
Single Pulse  
2
4
0.1  
1
10  
100  
0
3
1
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
1 000  
100  
10  
Pulsed  
TA = –25 ˚C  
25 ˚C  
125 ˚C  
1.0  
VDS = 10 V  
0
10  
VGS - Gate to Source Voltage - V  
15  
5
3
2SK2510  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 62.5 ˚C/W  
1
R
th(ch-c) = 3.57 ˚C/W  
0.1  
0.01  
Single Pulse  
0.001  
100  
10  
µ
µ
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1000  
100  
10  
Pulsed  
V
DS = 10 V  
Pulsed  
60  
T
A
= –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
40  
20  
I = 20 A  
D
1
1
10  
100  
1 000  
0
2
10  
20  
30  
I
D
- Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
Pulsed  
VDS = 10 V  
I = 1 mA  
D
1
0
V
GS = 4 V  
20  
0
VGS = 10 V  
1.0  
10  
- Drain Current - A  
100  
–50  
0
50  
100  
150  
I
D
Tch - Channel Temperature - ˚C  
4
2SK2510  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
40  
100  
10  
1
30  
20  
V
GS = 4 V  
V
GS = 10 V  
V
GS = 0  
10  
0
0.1  
I
D
= 20 A  
150  
ch - Channel Temperature - ˚C  
0
0
–50  
1.5  
0.5  
1.0  
100  
50  
T
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100 000  
10 000  
1 000  
100  
V
GS = 0  
f = 1 MHz  
t
d(off)  
t
f
t
r
t
d(on)  
Ciss  
1 000  
100  
10  
C
oss  
V
= 30 V  
DD = 10 V  
RGS  
= 10 Ω  
Crss  
V
G
1.0  
0.1  
1
10  
100  
0.1  
1.0  
10  
100  
VDS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1 000  
100  
16  
14  
12  
10  
8
80  
60  
40  
20  
di/dt = 100 A/µs  
V
GS = 0  
I = 40 A  
D
V
DD = 12 V  
30 V  
48 V  
V
GS  
V
DS  
6
10  
4
2
1.0  
0.1  
0
1.0  
10  
100  
0
20  
40  
60  
80  
I
D
- Drain Current - A  
Qg - Gate Charge - nC  
5
2SK2510  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
TEI-1202  
IEI-1209  
IEI-1207  
IEI-1213  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
6
2SK2510  
[MEMO]  
7
2SK2510  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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