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2SK2530

型号:

2SK2530

描述:

超高速开关应用[ Ultrahigh-Speed Switching Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

45 K

Ordering number:ENN6406  
N-Channel Silicon MOSFET  
2SK2530  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON-resistance.  
· Ultrahigh-speed switching.  
· Low voltage drive.  
2083B  
[2SK2530]  
6.5  
2.3  
5.0  
0.5  
4
0.85  
0.7  
1.2  
0.6  
0.5  
1 : Gate  
2 : Drain  
1
2
3
3 : Source  
4 : Drain  
SANYO : TP  
2.3  
2.3  
2092B  
[2SK2530]  
6.5  
2.3  
5.0  
0.5  
4
0.5  
1.2  
0.85  
1
2
3
0.6  
1 : Gate  
2 : Drain  
0 to 0.2  
3 : Source  
4 : Drain  
SANYO : TP-FA  
2.3  
2.3  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
92500TS (KOTO) TA-2182 No.6406–1/4  
2SK2530  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
250  
±30  
2
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
8
A
DP  
1
W
W
˚C  
˚C  
Allowable Power Dissipation  
P
D
Tc=25˚C  
20  
150  
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
250  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=1mA, V =0  
D GS  
V
V
(BR)DSS  
=±100µA, V =0  
±30  
(BR)GSS  
G
GS  
I
V
V
V
V
V
V
V
V
=250V, V =0  
GS  
=±25V, V =0  
DS  
=10V, I =1mA  
D
=10V, I =1A  
D
1.0  
mA  
µA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
DS  
DS  
I
±10  
3.0  
GSS  
V
2.0  
1.3  
GS(off)  
| yfs |  
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
1.9  
S
R
=10V, I =1A  
D
1.5  
160  
40  
2.0  
DS(on)  
Ciss  
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
15  
t (on)  
d
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
10  
Rise Time  
t
13  
r
Turn-OFF Delay Time  
t (off)  
d
t
f
80  
Fall Time  
30  
Diode Forward Voltage  
Diode Reverse Recovery Time  
Marking : K2530  
V
I
I
=2A, V =0  
GS  
1.0  
90  
1.5  
SD  
S
S
t
=2A, di / dt=100µA/µs  
ns  
rr  
Switching Time Test Circuit  
V
IN  
V
=100V  
DD  
10V  
0V  
I
=1A  
D
R =100  
L
V
IN  
V
D
OUT  
PW=10µs  
D.C.1%  
G
50Ω  
2SK2530  
P. G  
S
No.6406–2/4  
2SK2530  
I
-- V  
I
-- V  
D
DS  
D
GS  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
V =10V  
DS  
5.0V  
2.5  
2.0  
1.5  
1.0  
4.0V  
1.0  
0.5  
0
V
GS  
=3.5V  
0.5  
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
Drain-to-Source Voltage, V  
– V  
Gate-to-Source Voltage, V  
– V  
DS  
GS  
IT01567  
IT01568  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
2.8  
2.4  
2.0  
1.6  
Tc=25°C  
I =1A  
D
I =1A  
D
V =10V  
GS  
1.2  
0.8  
0.4  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
– V  
Case Temperature, Tc – ˚C  
GS  
IT01569  
IT01570  
y
|
fs | - I  
D
I
-- V  
F
SD  
10  
10  
V
=10V  
V
=0  
7
5
DS  
7
5
GS  
3
2
3
2
1.0  
1.0  
7
5
7
5
3
2
3
2
0.1  
7
5
0.1  
7
5
3
2
3
2
0.01  
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.1  
Drain Current, I 1.A0  
Diode Forward Voltage, V  
SD  
– V  
D
IT01571  
IT01572  
SW Time -- I  
Ciss, Coss, Crss -- V  
DS  
D
1000  
1000  
V
V
=100V  
=10V  
f=1MHz  
DD  
GS  
3
3
7
5
3
2
3
2
t (off)  
d
100  
Ciss  
7
5
t
f
100  
3
2
7
5
t
r
10  
7
5
t (on)  
d
3
2
3
2
1.0  
10  
2
3
5
7
2
3
5
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
0.1  
Drain Current, I 1.0– A  
Drain-to-Source Voltage, V  
– V  
DS  
D
IT01573  
IT01574  
No.6406–3/4  
2SK2530  
A S O  
P
-- Ta  
D
2
1.2  
1.0  
10  
7
5
10µs  
I
=8A  
DP  
3
2
0.8  
0.6  
0.4  
I =2A  
D
1.0  
7
5
3
2
Operation in this area  
0.1  
7
5
is limited by R (on).  
DS  
0.2  
0
3
2
Tc=25°C  
Single pulse  
0.01  
2
3
5
7
2
3
5
7
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
Drain-to-Source Voltage, V  
– V  
Ambient Temperature, Ta – ˚C  
DS  
IT01788  
IT01575  
P
-- Tc  
D
30  
25  
20  
15  
10  
5
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, Tc – ˚C  
IT01576  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of September, 2000. Specifications and information herein are  
subject to change without notice.  
PS No.6406–4/4  
厂商 型号 描述 页数 下载

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ETC

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PANASONIC

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