Power F-MOS FETs
2SK2538
2SK2538
Silicon N-Channel Power F-MOS
Unit : mm
■ Features
10.0±0.2
5.5±0.2
4.2±0.2
●
●
●
Avalanche energy capability guaranteed
2.7±0.2
High-speed switching
No secondary breakdown
ø3.1±0.1
■ Applications
●
High-speed switching (switching mode regulator)
1.3±0.2
●
For high-frequency power amplification
1.4±0.1
0.5 +0.2
-
0.1
0.8±0.1
■ Absolute Maximum Ratings (Tc = 25˚C)
2.54±0.25
Parameter
Symbol
VDSS
VGSS
ID
Unit
V
Rating
Drain-Source breakdown voltage
Gate-Source voltage
250
5.08±0.5
1
2
3
V
±30
1 : Gate
DC
Drain current
A
±2
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Pulse
IDP
A
±4
Avalanche energy capability
EAS *
mJ
10
TC= 25˚C
30
Allowable power
dissipation
PD
W
Ta= 25˚C
2
Channel temperature
Storage temperature
Tch
˚C
˚C
150
Tstg
–55 to +150
* L= 5mH, IL= 2A, VDD= 30V, 1 pulse
■ Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Symbol
IDSS
Condition
Min
Typ
Max
100
±1
Unit
µ A
µ A
V
VDS= 200V, VGS= 0
IGSS
VGS=±30V, VDS= 0
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID=1A
VDS= 25V, ID=1A
IDR= 2A, VGS= 0
VDSS
Vth
250
1
5
2
V
RDS(on)
1.2
1
Ω
|Yfs
|
0.5
S
VDSF
Ciss
–1.6
V
220
60
20
10
20
45
90
pF
pF
pF
ns
Output capacitance
Coss
Crss
V
DS=10V, VGS= 0, f=1MHz
Feedback capacitance
Turn-on time (delay time)
Rise time
td(on)
tr
VDD= 200V, ID= 2A
ns
Fall time
tf
VGS=10V, RL=100Ω
ns
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
td(off)
Rth(ch-c)
Rth(ch-a)
ns
4.17
62.5
˚C/W
˚C/W
