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2SK2560

型号:

2SK2560

描述:

VZ系列功率MOSFET ( 200V 20A )[ VZ Series Power MOSFET(200V 20A) ]

品牌:

SHINDENGEN[ SHINDENGEN ELECTRIC MFG.CO.LTD ]

页数:

10 页

PDF大小:

390 K

SHINDENGEN  
VZ Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2560  
( F20F20VZ )  
Case : FTO-220  
(Unit : mm)  
200V 20A  
FEATURES  
Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
The static Rds(on) is small.  
The switching time is fast.  
APPLICATION  
DC/DC converters  
Power supplies of DC 12-24V input  
Product related to  
Integrated Service Digital Network  
RATINGS  
Absolute Maximum Ratings Tc = 25℃)  
Item  
Symbol  
Conditions  
Ratings Unit  
-55~150 ℃  
150  
stg  
StorageTemperature  
T
T
ch  
ChannelTemperature  
DSS  
Drain-SourceVoltage  
V
200  
±30  
20  
40  
20  
60  
20  
2
0.5  
V
Gate-SourceVoltage  
VGSS  
D
I
DP  
I
S
I
PT  
AS  
I
ContinuousDrainCurrentDC)  
ContinuousDrainCurrentPeak)  
ContinuousSourceCurrentDC)  
TotalPowerDissipation  
SinglePulseAvalancheCurrent  
DielectricStrength  
A
W
ch  
T =25℃  
A
kV  
Nm  
dis  
V
Terminalstocase,AC 1minute  
MountingTorque  
TOR Recommendedtorque0.3 Nm )  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
VZ Series Power MOSFET  
2SK2560 ( F20F20VZ )  
Electrical Characteristics Tc = 25℃  
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Forward Tranconductance  
V(BR)DSS ID = 1mA, VGS = 0V  
200  
V
μA  
IDSS  
IGSS  
gfs  
VDS = 200V, VGS = 0V  
250  
±0.1  
14  
0.1 0.18  
VGS = ±30V, VDS = 0V  
ID = 10A, VDS = 10V  
7
S
Ω
V
Static Drain-Source On-tate Resistance RDS(ON) ID =10A, VGS = 10V  
Gate Threshold Voltage  
Source-Drain Diode Forward Voltage  
Thermal Resistance  
VTH  
VSD  
ID = 1mA, VDS = 10V  
IS = 10A, VGS = 0V  
2.0  
3.0  
4.0  
1.5  
θjc junction to case  
2.08 /W  
nC  
Total Gate Charge  
Qg  
Ciss  
Crss  
Coss  
ton  
VDD = 150V, VGS = 10V, ID = 20A  
55  
1800  
165  
620  
Input Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Turn-On Time  
VDS = 10V, VGS = 0V, f = 1MHZ  
ID = 10A, RL = 10Ω, VGS = 10V  
pF  
100 200  
ns  
Turn-Off Time  
toff  
280 560  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2560  
Transfer Characteristics  
40  
35  
30  
25  
20  
15  
10  
5
Tc = - 55°C  
25°C  
100°C  
150°C  
V
= 10V  
DS  
pulse test  
TYP  
0
0
4
8
12  
16  
20  
Gate-Source Voltage VGS [V]  
2SK2560 Static Drain-Source On-state Resistance  
1
I = 10A  
D
0.1  
V
GS  
= 10V  
pulse test  
TYP  
0.01  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2560  
Gate Threshold Voltage  
5
4
3
2
1
0
V
= 10V  
DS  
I = 1mA  
D
TYP  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2560  
Safe Operating Area  
100  
10  
1
100ms  
R
limit  
DS(ON)  
200ms  
1ms  
10ms  
DC  
Tc = 25°C  
Single Pulse  
0.1  
1
10  
100  
1000  
Drain-Source Voltage VDS [V]  
C ° / W ] j c q ( t ) [  
T r a n s i e n t T h e r m a l I m p e d  
2SK2560  
Capacitance  
10000  
1000  
100  
Ciss  
Coss  
Crss  
Tc=25°C  
TYP  
10  
0
20  
40  
60  
80  
100  
Drain-Source Voltage VDS [V]  
2SK2560  
Power Derating  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2560  
Gate Charge Characteristics  
200  
150  
100  
50  
20  
15  
10  
5
V
DD  
= 150V  
100V  
50V  
V
DS  
V
GS  
I = 20A  
D
0
0
100  
0
20  
40  
60  
80  
Gate Charge Qg [nC]  
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PANASONIC

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