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2SK2597

型号:

2SK2597

描述:

N沟道硅功率MOSFET为900 MHz频段的手机功率放大基站[ N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION ]

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

103 K

PRELIMINARY DATA SHEET  
SILICON POWER MOS FIELD EFFECT TRANSISTOR  
2SK2597  
N-CHANNEL SILICON POWER MOSFET  
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE  
POWER AMPLIFICATION  
FEATURES  
PACKAGE DRAWING (Unit: mm)  
High output, high gain  
PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)  
PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)  
Low intermodulation distortion  
Covers all base station frequencies such as 800-MHz PDC  
and GSM  
45˚  
45˚  
G1  
G2  
S
φ
3.3±0.3  
High-reliability gold electrodes  
Hermetic sealed package  
Internal matching circuit  
D1  
D2  
Push-pull structure  
1.4  
3.2±0.2  
3.2±0.2  
±0.3  
13.5±0.3  
28.0±0.3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current (D.C.)  
Total power dissipation  
Thermal resistance  
Channel temperature  
Storage temperature  
Symbol  
VDS  
VGS  
ID  
Ratings  
Unit  
V
60  
7
V
Note  
15  
A
21.5±0.3  
PT  
290  
0.6  
W
Rth  
˚C/W  
˚C  
Tch  
200  
G
1
, G  
2
2
: gate  
D1  
, D  
: drain  
: source  
Tstg  
–65 to +150  
˚C  
S
Flange is connected to the source.  
Note Per side  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
Parameter  
Gate leakage current  
Cut-off voltage  
Symbol  
IGSS  
VGS(off)  
IDSS  
Condition  
MIN.  
1.5  
TYP.  
MAX.  
Unit  
µA  
V
VGS = 7 V  
1
4
2
VDS = 5 V, ID = 50 mA  
VDS = 60 V  
Drain current  
mA  
S
Mutual conductance  
Output power  
gm  
VDS = 5 V, ID = 3 A, ID = 100 mA  
2.0  
80  
35  
11  
PO  
f = 960 MHz, VDD = 30 V  
90  
40  
12  
W
IDQ = 200 mA × 2, Pin = 40 dBm  
Drain efficiency  
Linear gain  
η D  
%
GL  
f = 960 MHz, VDD = 30 V  
dB  
IDQ = 200 mA × 2, Pin = 30 dBm  
Third intermodulation distortion  
IM3  
f = 900 MHz, f = 0.1 MHz, VDD = 30 V  
IDQ = 200 mA × 2, PO = 42 dBm  
–38  
dBc  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. P10252EJ1V0DS00 (1st edition)  
Date Published October 1995 P  
Printed in Japan  
1995  
©
2SK2597  
OUTPUT v.s. IM3, ID CHARACTERISTICS  
THIRD ORDER INTERMODULATION DISTORTION / DRAIN  
CURRENT v.s. OUTPUT POWER  
Vds = 30 V  
–20 f1 = 900.0 MHz  
f2 = 900.1 MHz  
CLASS AB  
Idq = 200 mA × 2  
Idq = 500 mA × 2  
IM3  
–30  
–40  
–50  
–60  
I
D
5
4
3
2
1
0
IM3  
(dBc)  
ID (A)  
28 30 32 34 36 38 40 42 44 46 48  
P
OUT (dBm)  
(AVERAGE POWER)  
INPUT v.s. OUTPUT, POWER GAIN, EFFICIENCY  
(1) f = 960 MHz  
OUTPUT POWER / DRAIN EFFICIENCY /  
POWER GAIN vs. INPUT POWER  
1000  
100  
10  
f = 960 MHz  
VDD = 30 V  
IDQ = 200 mA × 2  
Pout  
η
100  
ηD  
GP  
1
10  
.1  
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
52  
Pin (dBm)  
2
2SK2597  
(2) f = 900 MHz  
OUTPUT POWER / DRAIN EFFICIENCY /  
POWER GAIN vs. INPUT POWER  
1000  
100  
10  
f = 900 MHz  
VDD = 30 V  
IDQ = 200 mA × 2  
Pout  
η
100  
ηD  
GP  
10  
1
.1  
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
52  
Pin (dBm)  
(3) f = 820 MHz  
OUTPUT POWER / DRAIN EFFICIENCY /  
POWER GAIN vs. INPUT POWER  
1000  
f = 820 MHz  
DD = 30 V  
DQ = 200 mA × 2  
V
I
Pout  
100  
10  
1
η
100  
ηD  
G
P
10  
.1  
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
52  
P
in (dBm)  
3
2SK2597  
ZIN, ZOUT  
90  
80  
60  
150  
Z
IN  
Z
OUT  
820  
900  
960  
900  
960 (MHz)  
820  
(MHz)  
RESISTANCE COMPONENT  
R
Zo  
- 1 0  
- 3 0  
- 1 5 0  
0 . 2 0  
- 4 0  
- 5 0  
- 1 3 0  
- 6 0  
- 1 2 0  
- 8 0  
- 1 0 0  
- 9 0  
VDD = 30 V, IDQ = 200 mA × 2, Pin = 40 dBm  
f (MHz)  
820  
ZIN ()  
ZOUT ()  
6.52 + j5.52  
8.86 + j5.49  
10.36 + j4.79  
2.34 + j0.91  
2.78 + j3.23  
2.95 + j3.37  
900  
960  
4
2SK2597  
APPLICATION CIRCUIT EXAMPLE (f = 960 MHz)  
To Gate Bias  
Circuit  
To Drain Bias  
Circuit  
DUT  
30 pF  
20 pF  
1 pF 5 pF  
20 pF  
13  
pF  
2 pF  
5 pF  
IN  
OUT  
1 pF  
30 pF  
To Gate Bias  
Circuit  
To Drain Bias  
Circuit  
Teflon substrate (t = 0.8 mm)  
: Through hole  
Notes on Handling  
This product internally uses beryllie porcelain (beryllium oxide). If powder or vapor of beryllium oxide enters your  
respiratory organs, you will have a difficulty in breathing, which is dangerous. Therefore, do no disassemble or  
chemically process the product.  
Be sure to abolish the product separately from general industrial wastes or garbage.  
5
2SK2597  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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