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2SK2623

型号:

2SK2623

描述:

超高速开关应用[ Ultrahigh-Speed Switching Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

141 K

Ordering number:ENN6148A  
N-Channel Silicon MOSFET  
2SK2623  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON-resistance.  
· Low Qg.  
2083B  
[2SK2623]  
6.5  
2.3  
5.0  
0.5  
4
0.85  
0.7  
1.2  
0.6  
0.5  
1 : Gate  
1
2
3
2 : Drain  
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP  
2092B  
[2SK2623]  
6.5  
2.3  
0.5  
5.0  
4
0.5  
1.2  
0.85  
1
2
3
0.6  
1 : Gate  
0 to 0.2  
2 : Drain  
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP-FA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
81000TS (KOTO) TA-2287 No.6148–1/4  
2SK2623  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
±30  
1.5  
6
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
A
DP  
1.0  
30  
W
W
˚C  
˚C  
Allowable Power Dissipation  
P
D
Tc=25˚C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
D GS  
V
mA  
nA  
V
(BR)DSS  
I
V
V
V
V
V
V
V
V
V
=600V, V =0  
1.0  
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
DS  
DS  
DS  
GS  
I
=±30V, V =0  
DS  
=10V, I =1mA  
D
=10V, I =0.8A  
D
=15V, I =0.8A  
D
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
±100  
5.5  
GSS  
V
3.5  
0.5  
GS(off)  
| yfs |  
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
1.0  
S
R
4.2  
300  
90  
45  
8
5.5  
DS(on)  
Ciss  
pF  
pF  
pF  
nC  
ns  
ns  
ns  
ns  
V
Output Capacitance  
Coss  
Crss  
Qg  
Reverse Transfer Capacitance  
Total Gate Charge  
=200V, V =10V, I =1.5A  
GS  
D
Turn-ON Delay Time  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
I =1.5A, V =0  
9
d(on)  
Rise Time  
t
12  
20  
17  
0.8  
r
Turn-OFF Delay Time  
Fall Time  
t
d(off)  
t
f
Diode Forward Voltage  
Marking : K2623  
V
1.2  
SD  
S
GS  
Switching Time Test Circuit  
V =200V  
DD  
PW=1µs  
D.C.0.5%  
I =0.8A  
D
V
IN  
R =250Ω  
L
V
IN  
15V  
0V  
D
V
OUT  
G
2SK2623  
P.G  
R
GS  
50Ω  
S
No.6148–2/4  
2SK2623  
I
V
I - V  
D GS  
D
DS  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
3.0  
V =10V  
DS  
Tc=  
-25°  
C
2.5  
2.0  
1.5  
1.0  
25°C  
75°C  
8V  
7V  
0.5  
0
V
=6V  
GS  
0
10  
20  
30  
40  
50  
0
5
10  
15  
20  
Drain-to-Source Voltage, V  
– V  
Gate-to-Source Voltage, V  
– V  
DS  
GS  
y
R
V
GS  
|
fs  
| - I  
D
DS(on)  
10  
7
10  
9
V =10V  
DS  
Tc=25°C  
I =1.5A  
D
0.8A  
0.5A  
5
8
3
2
7
6
1.0  
7
5
4
5
25°C  
3
3
2
2
1
0
0.1  
0.1  
2
3
5
7
2
3
5
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1.0  
Drain Current, I – A  
Gate-to-Source Voltage, V  
– V  
GS  
D
R
Tc  
V
Tc  
DS(on)  
GS(off)  
11  
10  
9
7
6
5
4
3
2
V
=10V  
DS  
D
I =1mV  
8
7
6
5
4
3
2
1
0
1
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
0
50  
100  
150  
Case Temperature, Tc – ˚C  
Case Temperature, Tc – ˚C  
SW Time  
-
I
I
V
SD  
D
F
2
1000  
7
V
V
=200V  
V
=0  
DD  
GS  
10  
7
5
3
2
=15V  
5
GS  
3
2
1.0  
100  
7
7
5
3
2
5
3
2
0.1  
7
5
3
2
10  
7
t (on)  
d
0.01  
7
5
3
2
5
3
2
1.0  
7
0.001  
2
3
5
7
2
3
5
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1.0  
Drain Current, I – A  
D
Diode Forward Voltage, V  
SD  
– V  
No.6148–3/4  
2SK2623  
Ciss,Coss,Crss  
V
A S O  
DS  
10  
1000  
f=1MHz  
I
=6A  
DP  
7
5
7
5
3
2
Ciss  
I
=1.5A  
D
3
2
1.0  
7
5
100  
7
3
2
Operation in this area  
is limited by R (on).  
5
0.1  
7
DS  
3
2
5
3
2
Tc=25°C  
Single pulse  
0.01  
10  
0
5
10  
15  
20  
25  
30  
2
3
5
7
2
3
5
7
2
3
5
7
1000  
1.0  
10  
100  
Drain-to-Source Voltage, V  
DS  
– V  
Drain-to-Source Voltage, V  
DS  
– V  
P
-
Ta  
P
-
Tc  
D
D
32  
30  
28  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
24  
20  
16  
12  
8
4
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta – ˚C  
Case Temperature, Tc – ˚C  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of August, 2000. Specifications and information herein are subject to  
change without notice.  
PS No.6148–4/4  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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ETC

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PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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