Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For pyroelectric sensor
unit: mm
2.8 –+00..32
1.5 –+00..0255
0.65±0.15
0.65±0.15
■ Features
● Low noise-figure (NF)
1
2
● High gate to drain voltage VGDO
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
3
0.1 to 0.3
0.4±0.2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Symbol
VGDS
ID
Ratings
Unit
V
−40
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
10
mA
mA
mW
°C
Gate current
IG
2
200
Marking Symbol: HS
Allowable power dissipation
Channel temperature
Storage temperature
PD
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics (Ta = 25 ± 3°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
4.7
Unit
mA
nA
V
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
VDS = 10V, VGS = 0
1.4
IGSS
VGS = −20V, VDS = 0
−1
VGDS
VGSC
| Yfs |
IG = −100µA, VDS = 0
VDS = 10V, ID = 1µA
−40
Gate to Source cut-off voltage
Forward transfer admittance
−3.5
V
VDS = 10V, ID = 1µA, f = 1kHz
2.5
mS
pF
pF
pF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
5
1
1
VDS = 10V, VGS = 0, f = 1MHz
Note: The test method to comply with JISC7030, Field effect transistor test method.
1
