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2SK2779

型号:

2SK2779

描述:

MOSFET[ MOSFET ]

品牌:

SANKEN[ SANKEN ELECTRIC ]

页数:

1 页

PDF大小:

39 K

2SK2779  
External dimensions  
1 ...... FM20  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
100  
max  
V(BR) DSS  
IGSS  
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±20V  
VDSS  
VGSS  
ID  
100  
±20  
V
V
±100  
100  
2.0  
IDSS  
VDS = 100V, VGS = 0V  
VDS = 10V, ID = 250µA  
VDS = 10V, ID = 10A  
VGS = 10V, ID = 10A  
±20  
A
VTH  
1.0  
12  
1
Re (yfs)  
20  
60  
S
ID (pulse)  
±80  
A
*
80  
95  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
PD  
EAS  
35 (Tc = 25ºC)  
200  
W
mJ  
A
RDS (on)  
75  
V
GS = 4V, ID = 10A  
2
*
Ciss  
Coss  
Crss  
td (on)  
tr  
1630  
480  
180  
20  
V
DS = 10V, f = 1.0MHz,  
IAS  
20  
VGS = 0V  
Tch  
Tstg  
150  
ºC  
ºC  
55 to +150  
ID = 10A, VDD 50V,  
RL = 5, VGS = 10V,  
See Figure 2 on Page 5.  
90  
1: PW 100µs, duty cycle 1%  
2: VDD = 25V, L = 750µH, IL = 20A, unclamped, RG = 50,  
See Figure 1 on Page 5.  
td (off)  
tf  
120  
55  
*
*
VSD  
1.0  
1.5  
ISD = 20A, VGS = 0V  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
80  
60  
40  
20  
0
20  
15  
10  
20  
15  
10  
10V  
VDS = 10V  
VGS = 4V  
4V  
3.5V  
3V  
VGS = 10V  
TC = 55ºC  
25ºC  
2.5V  
5
0
5
0
125ºC  
VGS = 2V  
0
2
4
6
8
10  
0
1
2
3
4
0
5
10  
15  
20  
VDS (V)  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
2.5  
2.0  
1.5  
1.0  
50  
150  
100  
ID = 10A  
VDS = 10V  
TC = 55ºC  
25ºC  
VGS = 4V  
125ºC  
10  
5
VGS = 10V  
ID = 20A  
ID = 10A  
50  
0
0.5  
0
1
0.5  
2
5
10  
20  
150  
0.05 0.1  
0.5  
1
5
10 20  
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
Ta PD Characteristics  
(Tc=25ºC)  
5000  
20  
15  
10  
100  
50  
40  
VGS = 0V  
ID (pulse) max  
ID max  
f= 1MHz  
Ciss  
30  
20  
10  
0
10  
5
1000  
500  
5V  
Coss  
1
5
0
0.5  
VGS = 0V  
100  
50  
Crss  
40  
Without heatsink  
0.1  
0
10  
20  
30  
50  
0
0.5  
1.0  
1.5  
0
50  
100  
Ta (ºC)  
150  
0.5  
1
5
10  
50 100 200  
VDS (V)  
VSD (V)  
VDS (V)  
40  
厂商 型号 描述 页数 下载

PANASONIC

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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