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2SK2848

型号:

2SK2848

描述:

MOSFET[ MOSFET ]

品牌:

SANKEN[ SANKEN ELECTRIC ]

页数:

1 页

PDF大小:

38 K

2SK2848  
External dimensions  
1 ...... FM20  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Conditions  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
min  
600  
max  
V(BR) DSS  
V
nA  
µA  
V
I
=
GS  
DS  
DS  
DS  
GS  
100µA, V  
= 0V  
GS  
D
VDSS  
VGSS  
ID  
600  
V
V
I
I
±
100  
100  
4.0  
V
V
V
V
V
= ±30V  
GSS  
DSS  
±30  
=
=
=
=
600V, V  
= 0V  
GS  
±2  
A
V
TH  
2.0  
1.2  
3.0  
1.7  
3.0  
290  
70  
10V, I  
20V, I  
10V, I  
=
=
=
250µA  
1A  
D
D
D
1
ID (pulse)  
±8  
A
*
Re (yfs)  
RDS (on)  
Ciss  
S
3.8  
1A  
PD  
EAS  
30 (Tc = 25ºC)  
W
mJ  
A
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
10  
*
V
V
=
=
10V, f  
0V  
=
1.0MHz,  
DS  
Coss  
Crss  
GS  
IAS  
2
150  
30  
Tch  
Tstg  
ºC  
ºC  
td (on)  
16  
ID = 1A, VDD 250V,  
RL = 250, VGS = 10V,  
See Figure 2 on Page 5.  
t
30  
r
55 to +150  
td (off)  
45  
1: PW 100µs, duty cycle 1%  
2: VDD = 30V, L = 5mH, IL = 2.0A, unclamped, RG = 50,  
See Figure 1 on Page 5.  
*
*
t
145  
0.9  
f
V
SD  
1.4  
I
=
2.0A, V  
= 0V  
SD  
GS  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
4
3
2
2.0  
2.0  
1.5  
1.0  
10V  
VDS = 20V  
VGS = 10V  
5.5V  
1.5  
1.0  
5V  
4.5V  
0.5  
0
1
0
0.5  
0
TC = 55ºC  
25ºC  
125ºC  
V
GS = 4V  
0
5
10  
VDS (V)  
15  
20  
0
2
4
6
8
0
0.5  
1.0  
1.5  
2.0  
150  
150  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
20  
15  
10  
5
8
VDS = 20V  
ID = 1A  
VGS = 10V  
T
C = 55ºC  
25ºC  
6
4
2
0
125ºC  
1
ID = 2A  
ID = 1A  
0.5  
5
0
0.2  
0.05  
4
5
10  
20  
0.1  
0.5  
1
2
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
Ta PD Characteristics  
(Tc=25ºC)  
1000  
500  
2.0  
1.5  
1.0  
0.5  
0
10  
5
V
GS = 0V  
f= 1MHz  
30  
ID (pulse) max  
ID max  
Ciss  
20  
10  
0
1
100  
50  
0.5  
VGS = 0V  
5V,10V  
Coss  
0.1  
Crss  
40  
Without heatsink  
0.05  
0.03  
10  
0
10  
20  
30  
50  
0
50  
100  
Ta (ºC)  
0
0.5  
1.0  
1.5  
3
5
10  
50 100  
VDS (V)  
500 700  
VDS (V)  
VSD (V)  
44  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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