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2SK2851

型号：

2SK2851

描述：

硅N沟道MOS FET高速电源开关[ Silicon N Channel MOS FET High Speed Power Switching ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

52 K

下载PDF手册
2SK2851  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-478  
1st. Edition  
Features  
•
Low on-resistance  
RDS(on) = 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A)  
•
•
4V gate drive devices.  
Large current capacitance  
ID = 5 A  
Outline  
TO-92MOD.  
D
G
1. Source  
2. Drain  
3. Gate  
3
2
1
S
2SK2851  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VDSS  
VGSS  
ID  
60  
±20  
V
5
A
1
Drain peak current  
Body to drain diode reverse drain current  
Avalanche current  
ID(pulse)  
*
20  
A
IDR  
5
A
IAP*3  
EAR*3  
Pch*2  
Tch  
Tstg  
5
A
Avalanche energy  
2.14  
mJ  
W
°C  
°C  
Channel dissipation  
Channel temperature  
Storage temperature  
0.9  
150  
–55 to +150  
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Ta = 25°C  
3. Value at Tch = 25°C, Rg ≥ 50 Ω  
2
2SK2851  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
60  
—
—
V
ID = 10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VDS = 60 V, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
IDSS  
±20  
—
—
—
V
Zero gate voltege drain  
current  
—
10  
µA  
Gate to source leak current  
IGSS  
—
1.0  
—
—
5
—
±10  
2.0  
0.07  
0.1  
—
µA  
V
VGS = ±16V, VDS = 0  
ID = 1mA, VDS = 10V  
ID = 2.5A, VGS = 10V*1  
ID = 2.5A, VGS = 4V*1  
ID = 2.5A, VDS = 10V*1  
VDS = 10V  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
—
0.055  
0.07  
7
Ω
resistance  
RDS(on)  
Ω
Forward transfer admittance |yfs|  
S
Input capacitance  
Output capacitance  
Ciss  
—
—
—
—
—
—
—
—
500  
260  
110  
10  
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Coss  
—
VGS = 0  
Reverse transfer capacitance Crss  
—
f = 1MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
—
VGS = 10V, ID = 2.5A  
RL = 12Ω  
30  
—
Turn-off delay time  
Fall time  
100  
75  
—
—
Body to drain diode forward  
voltage  
VDF  
0.9  
—
ID = 5A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
50  
—
ns  
IF = 5A, VGS = 0  
diF/ dt = 50A/µs  
Note: 1. Pulse test  
3
2SK2851  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
1.6  
1.2  
0.8  
0.4  
100  
30  
10  
3
1
0.3  
0.1  
Operation in  
this area is  
limited by R  
DS(on)  
Ta = 25 °C  
1 shot pulse  
0.03  
0.01  
0
3
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
Drain to Source Voltage  
V
(V)  
DS  
Ambient Temperature Ta (°C)  
Typical Transfer Characteristics  
= 10 V  
Typical Output Characteristics  
10  
8
10  
8
10 V  
4 V  
V
DS  
Pulse Test  
3 V  
3.5 V  
Pulse Test  
2.5 V  
6
6
25°C  
Tc = 75°C  
4
4
–25°C  
2
2
V
= 2 V  
8
GS  
0
0
1
2
3
4
GS  
5
2
4
6
10  
Gate to Source Voltage  
V
(V)  
Drain to Source Voltage  
V
(V)  
DS  
4
2SK2851  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
1.0  
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
Pulse Test  
0.5  
0.2  
0.1  
I
= 5 A  
D
V
GS  
= 4 V  
10 V  
0.05  
2 A  
1 A  
0.02  
0.01  
12  
Gate to Source Voltage  
0
4
8
16  
20  
0.1 0.3  
1
10  
30  
(A)  
100  
3
V
(V)  
Drain Current  
I
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
50  
0.20  
Pulse Test  
V
= 10 V  
DS  
Pulse Test  
20  
10  
0.16  
0.12  
0.08  
0.04  
Tc = –25 °C  
1, 2 A  
I
= 5 A  
D
5
25 °C  
V
= 4 V  
GS  
75 °C  
1, 2, 5 A  
2
1
10 V  
0
0
–40  
0.5  
1
2
5
10  
40  
80  
120  
160  
0.1 0.2  
0.5  
Case Temperature Tc (°C)  
Drain Current I  
(A)  
D
5
2SK2851  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
500  
2000  
1000  
di / dt = 50 A / µs  
V
= 0, Ta = 25 °C  
GS  
200  
100  
50  
Ciss  
500  
200  
Coss  
Crss  
100  
50  
20  
10  
5
20  
10  
V
= 0  
GS  
f = 1 MHz  
0.1 0.2  
0.5  
1
2
5
10  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
(A)  
DR  
Drain to Source Voltage V  
(V)  
DS  
Dynamic Input Characteristics  
= 5A  
Switching Characteristics  
1000  
100  
80  
60  
40  
20  
20  
I
D
300  
100  
16  
12  
8
V
t
GS  
d(off)  
V
DS  
t
f
V
= 10 V  
25 V  
t
30  
10  
DD  
r
t
d(on)  
50 V  
4
0
V
= 50 V  
25 V  
10 V  
3
1
DD  
V
= 10 V, V  
= 30 V  
DD  
GS  
PW = 5 µs, duty < 1 %  
0
0.5  
1
2
I
5
10  
8
16  
24  
32  
400  
0.1 0.2  
Gate Charge Qg (nc)  
Drain Current  
(A)  
D
6
2SK2851  
Maximun Avalanche Energy vs.  
Channel Temperature Derating  
Reverse Drain Current vs.  
Source to Drain Voltage  
10  
8
2.5  
2.0  
1.5  
1.0  
I
= 5 A  
AP  
10 V  
V
= 25 V  
DD  
duty < 0.1 %  
5 V  
Ω
Rg > 50  
6
V
= 0, –5 V  
GS  
4
2
0.5  
0
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage  
V
(V)  
Channel Temperature Tch (°C)  
SD  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
D = 1  
0.5  
Ta = 25°C  
0.3  
0.1  
0.05  
0.03  
0.01  
θ
θ
γ
θ
ch – a(t) = s (t) • ch – a  
ch – a = 139 °C/W, Ta = 25 °C  
PW  
T
P
DM  
D =  
0.003  
PW  
T
0.001  
0.00001  
0.0001 0.001  
0.01  
0.1  
1
10  
1000  
100  
10000  
Pulse Width PW (S)  
7
2SK2851  
Avalanche Test Circuit  
Avalanche Waveform  
V
DSS  
1
2
2
E
=
• L • I  
•
AP  
AR  
V
– V  
DD  
DSS  
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
Switching Time Test Circuit  
Switching Time Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
8
2SK2851  
Package Dimentions  
Unit: mm  
4.2 max  
5.2 max  
0.70 max  
0.75 max  
0.60 max  
0.55 max  
0.5 max  
TO–92Mod.  
SC–51  
—
1.27  
2.54  
Hitachi Code  
EIAJ  
JEDEC  
9
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
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