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2SK2857

型号:

2SK2857

描述:

N沟道MOS场效应晶体管高速开关[ N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

64 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2857  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR HIGH SPEED SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK2857 is a switching device which can be driven directly  
by a 5V power source.  
4.5±0.1  
1.6±0.2  
Electrode  
Connection  
The 2SK2857 features a low on-state resistance and excellent  
Switching Characteristics, and is suitable for applications such as  
actuator driver.  
1.5±0.1  
1.Souce  
2.Drain  
3.Gate  
2
3
1
FEATURES  
0.42±0.06  
0.42  
±0.06  
0.47  
Can be driven by a 5V power source.  
Low On-state resistance :  
1.5  
+0.03  
0.41-0.05  
±0.06  
3.0  
DS(on)1  
GS  
D
R
= 220 mMAX. (V = 4 V, I = 1.5 A)  
Marking : NX  
DS(on)2  
R
GS  
D
= 150 mMAX. (V = 10 V, I = 2.5 A)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
V
60  
±20  
±4  
V
V
GSS  
Drain  
D(DC)  
I
A
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
D(pulse)  
I
±16  
2
A
Internal  
Diode  
Gate  
T
P
W
°C  
ch  
T
150  
Gate  
Protection  
Diode  
stg  
T
55 to +150 °C  
Source  
Notes1. PW 10 µs, Duty Cycle 1 %  
2. Mounted on ceramic board of 16 cm2 × 0.7 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark shows major revised points.  
Document No. D11648EJ2V0DS00 (2nd edition)  
Date Published March 1999 NS CP (K)  
Printed in Japan  
1998,1999  
©
2SK2857  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Cut-off Current  
SYMBOL  
TEST CONDITIONS  
VDS = 60 V, VGS = 0 V  
MIN.  
TYP.  
1.4  
MAX.  
UNIT  
IDSS  
IGSS  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
10  
±10  
2.0  
µA  
µA  
V
Gate Leakage Current  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 2 A  
VGS = 4 V, ID = 1.5 A  
VGS = 10 V, ID = 2.5 A  
VDS = 10 V  
Gate Cut-off Voltage  
1.0  
1
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
150  
110  
265  
125  
56  
220  
150  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Input Capacitance  
VGS = 0 V  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 25 V, ID = 1 A  
VGS(on) = 10 V, RG = 10 Ω  
RL = 25 Ω  
8
11  
Turn-off Delay Time  
Fall Time  
52  
22  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QG  
VDS = 48 V  
VGS = 10 V  
ID = 4 A  
10.6  
0.7  
3.5  
0.86  
49  
QGS  
QGD  
VF(S-D)  
trr  
IF = 4 A, VGS = 0 V  
IF = 4 A, VGS = 0 V  
di/dt = 50 A /µs  
ns  
nC  
Qrr  
26.6  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
IG = 2 mA  
VGS  
RL  
RL  
90 %  
VGS  
VGS(on)  
10 %  
Wave Form  
0
RG  
RG = 10 Ω  
PG.  
PG.  
VDD  
VDD  
50 Ω  
90 %  
90 %  
ID  
ID  
VGS  
0
10 %  
10 %  
ID  
0
Wave Form  
tr  
td(on)  
td(off)  
tf  
τ
ton  
toff  
τ = 1µ s  
Duty Cycle 1 %  
2
Data Sheet D11648EJ2V0DS00  
2SK2857  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
FORWARD BIAS SAFE OPERATING AREA  
100  
80  
100  
10  
1
60  
40  
20  
TA = 25˚C  
Single Pulse  
Mounted on Ceramic  
2
Board of 16cm x 0.7mm  
0
0.1  
1
10  
100  
30  
60  
90  
120  
150  
VDS - Drain to Source Voltage - V  
T
A - Ambient Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
TRANSFER CHARACTERISTICS  
DS = 10 V  
20  
10  
2.0  
1.6  
V
8 V  
6 V  
4 V  
1
0.1  
1.2  
0.8  
0.4  
0
T
A
= 125˚C  
75˚C  
25˚C  
25˚C  
V
GS = 2 V  
0.01  
0.4  
DS - Drain to Source Voltage - V  
1.2  
0.8  
1.6  
2.0  
2
3
4
5
1
V
V
GS - Gate to Sorce Voltage - V  
FORWARD TRANSFER ADMMITTANCE Vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
20  
10  
240  
200  
VDS = 10 V  
V
GS = 4 V  
TA = 125˚C  
75˚C  
160  
120  
TA  
= 25 ˚C  
25˚C  
25 ˚C  
75 ˚C  
25˚C  
1
125 ˚C  
80  
40  
0
0.1  
0.1  
1
20  
0.1  
10  
10  
1
20  
ID - Drain Current - A  
ID - Drain Current - A  
3
Data Sheet D11648EJ2V0DS00  
2SK2857  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1000  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
240  
200  
V
GS = 10 V  
800  
600  
T
A
= 125˚C  
75˚C  
160  
120  
25˚C  
400  
200  
25˚C  
80  
40  
0
I
D
= 2.5 A  
1.5 A  
12  
GS - Gate to Source Voltage - V  
0
2
6
1
10  
20  
4
8
10  
14 16  
0.1  
ID - Drain Current - A  
V
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
1000  
f = 1 MHz  
1000  
100  
10  
C
iss  
tr  
td(off)  
tf  
100  
C
oss  
td(on)  
Crss  
10  
1
0.1  
10  
100  
0.1  
1
- Drain Current - A  
10  
V
DS - Drain Source Voltage - V  
I
D
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
20  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
12  
60  
VGS = 0 V  
ID = 4 A  
10  
VGS  
50  
10  
VDD = 12 V  
30 V  
48 V  
40  
30  
20  
10  
8
6
4
V
DS  
1
2
0
0.1  
0.6  
0
2
4
6
8
10  
12  
0.8  
1.0  
1.2 1.4  
1.6 1.8 2.0  
Qg - Gate Charge - nC  
V
F(S-D) - Source to Drain Voltage - V  
4
Data Sheet D11648EJ2V0DS00  
2SK2857  
[MEMO]  
5
Data Sheet D11648EJ2V0DS00  
2SK2857  
[MEMO]  
6
Data Sheet D11648EJ2V0DS00  
2SK2857  
[MEMO]  
7
Data Sheet D11648EJ2V0DS00  
2SK2857  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
厂商 型号 描述 页数 下载

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