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2SK2941

型号:

2SK2941

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

76 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTORS  
2SK2941  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
inmillimeters  
This product is n-Chanel MOS Field Effect Transistor designed high  
current switching application.  
FEATURE  
10.6 MAX.  
10.0  
4.8 MAX.  
1.3±0.2  
Low On-Resistance  
3.6±0.2  
RDS(on)1 = 14 mTyp. (VGS = 10 V, ID =18 A)  
RDS(on)2 = 22 mTyp. (VGS = 4 V, ID = 18 A)  
4
Low Ciss  
Ciss = 1250 pF Typ.  
1 2 3  
Built-in G-S Protection Diode  
1.3±0.2  
0.5±0.2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Maximum Voltages and Currents  
0.75±0.1  
2.8±0.2  
2.54  
2.54  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
30  
±20  
±35  
±140  
V
V
A
A
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
JEDEC: TO-220AB  
VGSS  
ID(DC)  
ID(Pulse)  
Drain Current (Pulse)*  
MP-25 (TO-220)  
Maximum Power Dissipation  
Total Power Dissipation (TA = 25 ˚C)  
Total Power Dissipation (TC = 25 ˚C)  
Maximum Temperature  
PT  
PT  
1.5  
60  
W
W
Channel Temperature  
Tch  
150  
˚C  
˚C  
Drain  
Storage Temperature  
Tstg  
–55 to + 125  
Dody  
Diode  
Gate  
*
PW 10 µs, Duty Cycle 1%  
Gate Protection  
Diode  
Source  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device  
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to  
this device.  
The information in this document is subject to change without notice.  
Document No. D11007EJ1V0DS00 (1st edition)  
Date Published May 1997 N  
1997  
©
2SK2941  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
SYMBLO  
RDS(on)1  
RDS(on)2  
VGS(off)  
I yfs I  
IDDS  
MIN.  
TYP.  
14  
MAX.  
20  
UNIT  
m  
mΩ  
V
TEST CONDITION  
Drain to Source On-State  
Resistance  
VGS = 10 V, ID = 18 A  
VGS = 4 V, ID = 18 A  
22  
33  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
8.0  
1.5  
25  
2.0  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 18 A  
VDS = 30 V, VGS = 0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
IGSS  
±10  
VGS = ±20 V, VDS = 0  
VDS = 10 V, VGS = 0, f =1 MHz  
Ciss  
1250  
900  
460  
40  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
td(on)  
tr  
ID = 18 A, VGS(on) = 10 V  
VDD = 15 V, RG = 10 Ω  
Rise Time  
430  
160  
220  
50  
ns  
Turn-off Delay Time  
td(off)  
tr  
ns  
Fall Time  
ns  
Total Gate Charge  
QG  
nC  
nC  
nC  
V
ID = 35 A, VDD = 24 V,  
VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
4.5  
21  
1.0  
65  
IF = 35 A, VGS = 0  
ns  
IF = 35 A, VGS = 0,  
di/dt = 100 A/µs  
Qrr  
90  
nC  
Test Circuit 1 Switching Time  
Test Circuit 2 Gate Charge  
D.U.T.  
= 2 mA  
D.U.T.  
I
G
R
L
RL  
V
0
GS  
90 %  
V
GS  
Wave Form  
V
GS(on)  
10 %  
R
G
PG  
PG  
R = 10 Ω  
G
V
DD  
V
DD  
50 Ω  
I
D
90 %  
10 %  
90 %  
10 %  
V
GS  
I
D
I
D
0
0
Wave Form  
t
d(on)  
t
r
t
d(off)  
t
f
t
t
on  
t
off  
t = 1 µs  
Duty Cycle 1 %  
2
2SK2941  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
60  
40  
20  
100  
80  
60  
40  
20  
0
20  
40  
60 80 100 120 140 160  
0
20  
40  
60 80 100 120 140 160  
T
C
- Case Temperature - °C  
T
C
- Case Temperature - °C  
DRAIN CURRENT vs. DRAIN TO  
SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
200  
1000  
Pulsed  
Tc = 25 °C  
Single Pulse  
160  
120  
I
D(Pulse)  
V
GS = 10 V  
100  
10  
I
D(DC)  
80  
40  
V
GS = 4 V  
1
0
0.5  
1.0  
1.5  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
Rth(ch-a) = 83.3 (°C/W)  
100  
10  
1
Rth(ch-c) = 2.08 (°C/W)  
Single Pulse  
T
c
= 25 °C  
0.1  
1m  
10m  
100m  
1
10  
100  
1 000 10 000  
PW - Pulse Width - s  
3
2SK2941  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON - STATE RESISTANCE  
vs. DRAIN CURRENT  
2.0  
VDS = 10 V  
30  
I
D
= 1 mA  
V
GS = 4 V  
1.5  
1.0  
20  
10  
V
GS = 10 V  
0.5  
0
–50  
0
50  
100  
150  
0
1
10  
100  
T
ch - Channel Temperature - °C  
I - Drain Current - A  
D
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE  
vs. DRAIN CURRENT  
100  
Pulsed  
V DS  
= 10 V  
Pulsed  
T
A
= –25 °C  
25 °C  
100 I  
D
= 7 A  
18 A  
35 A  
75 °C  
125 °C  
10  
50  
0
5
10  
100  
- Drain Current - A  
10  
1000  
1
V
GS - Gate to Source Voltage - V  
I
D
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
1000  
100  
10  
10 000  
V
DS = 10 V  
V
GS = 0  
Pulsed  
f =1 MHz  
T
A
= –25 °C  
25 °C  
75 °C  
125 °C  
C
iss  
1000  
C
oss  
C
rss  
100  
10  
0.1  
1
10  
0
10  
5
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
4
2SK2941  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
SWITCHING CHARACTERISTICS  
1000  
100  
1000  
100  
t
t
r
f
Pulsed  
t
d(off)  
V
GS = 4V  
VGS = 0V  
t
d(on)  
10  
10  
1
1.0  
V
V
R
DD = 15 V  
GS =10 V  
in =10  
0.1  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0.1  
1
10  
100  
VSD - Source to Drain Voltage - V  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-RESISTANCE vs.  
CHANNEL TEMPERATURE  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
16  
14  
12  
10  
8
40  
I = 18 A  
D
ID = 35 A  
Pulsed  
100  
80  
VGS  
30  
20  
10  
V
DD = 24 V  
15 V  
6 V  
60  
6
VGS = 4 V  
40  
4
V
GS = 10 V  
20  
0
2
V
DS  
0
–50  
T
0
50  
100  
150  
0
20  
40  
60  
80  
ch - Channel Temperature - °C  
Q
g
- Gate Charge - nC  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
1000  
100  
µ
di/dt = 100 A/ s  
VGS = 0  
10  
1
0.1  
1
10  
100  
I
D
- Drain Current - A  
5
2SK2941  
ELECTRICAL REFERENCE (TA = 25 °C)  
Ducument Name  
NEC semiconductor device reliability/quality control system  
Quality grade on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Semiconductor device package manual  
Ducument No.  
C11745E  
C11531E  
C10535E  
C10943X  
MEI-1202  
TEA-1035  
TEA-1037  
Guide to quality assurance for semiconductor devices  
Application circuits using Power MOS FET  
Safe operating area of Power MOS FET  
6
2SK2941  
[MEMO]  
7
2SK2941  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  
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