MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
Dimensions in mm
OUTLINE DRAWING
4.6MAX
1.6±0.2
1.5±0.1
VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe³ 13dB
@VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ.
2
3
1
• Source case type SOT-89 package
(connected internally to source)
0.53
MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
1.5
0.48MAX
+0.03
-0.05
0.4
1 : DRAIN
2 : SOURCE
3 : GATE
band portable radio sets.
3.0
MARKING
SOT-89
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Ratings
17
Parameter
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Conditions
Unit
V
Symbol
VDSS
VGSS
Pch
V
±10
Tc=25˚C
(Note2)
1.5
W
˚C
˚C
Tj
150
Tstg
-40 to +110
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70´ 70mm,t=1.6mm Epoxy glass)
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Limits
Typ
Symbol
Parameter
Test conditions
Unit
Min
1.2
Max
10
VDS=12V, VGS=0V
VGS=10V, VDS=0V
VDS=7V, IDS=1mA
µA
µA
V
IDSS
IGSS
VTH
1
1.8
Threshold voltage
pF
pF
10
8
Ciss
Coss
Pout
hD
VGS=10V, VDS=0V,f=1MHz
VDS=10V, VGS=0V,f=1MHz
1.2
1
W
%
VDS=9.6V, Pin=50mW,f=450MHz
45
55
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. ´97