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2SK2981-Z

型号：

2SK2981-Z

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

61 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2981  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.  
PACKAGE DRAWING (Unit : mm)  
FEATURES  
• Low on-resistance  
DS(on)1  
2.3 ±0.2  
0.5 ±0.1  
6.5 ±0.2  
5.0 ±0.2  
GS  
D
R
R
R
= 27 mΩ (MAX.) (V = 10 V, I = 10 A)  
4
DS(on)2  
DS(on)3  
GS  
D
= 40 mΩ (MAX.) (V = 4.5 V, I = 10 A)  
1
2 3  
GS  
D
= 50 mΩ (MAX.) (V = 4 V, I = 10 A)  
1.3 MAX.  
iss  
iss  
• Low C : C = 860 pF (TYP.)  
• Built-in gate protection diode  
0.6 ±0.1  
0.6 ±0.1  
2.3 2.3  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
ORDERING INFORMATION  
PART NUMBER  
2SK2981  
PACKAGE  
TO-251  
TO-251(MP-3)  
2.3 ±0.2  
6.5 ±0.2  
5.0 ±0.2  
0.5 ±0.1  
2SK2981-Z  
TO-252  
4
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
0.9 0.8  
MAX. MAX.  
1.3 MAX.  
2.3 2.3  
GS  
DSS  
Drain to Source Voltage (V = 0)  
V
V
30  
±20  
±20  
±80  
20  
V
V
0.8  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
DS  
GSS  
Gate to Source Voltage (V = 0)  
D(DC)  
Drain Current (DC)  
Drain Current (Pulse) Note  
I
A
TO-252(MP-3Z) (SURFACE MOUNT TYPE)  
D(pulse)  
I
A
c
T
P
Total Power Dissipation (T = 25 °C)  
W
°C  
EQUIVALENT CIRCUIT  
ch  
T
Channel Temperature  
Storage Temperature  
150  
Drain  
stg  
T
–55 to + 150 °C  
Body  
Diode  
Gate  
Note PW ≤ 10 µs, Duty cycle ≤ 1 %  
Gate  
Protection  
Diode  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice.  
Document No.  
D12355EJ1V0DS00 (1st edition)  
Date Published December 1998 NS CP(K)  
Printed in Japan  
1998  
©
2SK2981  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
RDS(on)3  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 10 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
20  
30  
27  
40  
50  
2.0  
mΩ  
mΩ  
mΩ  
V
VGS = 4.5 V, ID = 10 A  
VGS = 4 V, ID = 10 A  
35  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 10 A  
VDS = 30 V, VGS = 0  
1.0  
6.0  
1.5  
13.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
VGS = ±20 V, VDS = 0  
VDS = 10 V, VGS = 0, f = 1 MHz  
±10  
Ciss  
860  
350  
160  
25  
Output Capacitance  
Coss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Crss  
td(on)  
tr  
td(off)  
tf  
ID = 10 A, VGS(on) = 10 V, VDD = 15 V  
Rise Time  
RG = 10 Ω  
270  
65  
Turn-off Delay Time  
Fall Time  
65  
Total Gate Charge  
QG  
ID = 20 A, VDD = 24 V, VGS = 10 V  
20  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
3.5  
6.5  
0.8  
35  
QGD  
VF(S-D)  
trr  
IF = 20 A, VGS = 0  
IF = 20 A, VGS = 0  
di/dt = 100 A/µs  
ns  
nC  
Qrr  
30  
TEST CIRCUIT 2 GATE CHARGE  
TEST CIRCUIT 1 SWITCHING TIME  
D.U.T.  
I =2 mA  
D.U.T.  
G
V
GS  
R
L
R
L
90 %  
90 %  
V
GS  
Wave Form  
V
GS (on)  
10 %  
10 %  
RG  
0
50 Ω  
PG.  
PG.  
V
DD  
V
DD  
R = 10 Ω  
G
90 %  
I
D
I
D
V
0
GS  
10 %  
I
D
0
Wave Form  
t
d (on)  
t
r
t
d (off)  
t
f
t
t
on  
t
off  
µ s  
t = 1  
Duty Cycle ≤ 1 %  
2
Data Sheet D12355EJ1V0DS00  
2SK2981  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
Case Temperature - ˚C  
T
C
-
T
C
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
I
D(PULSE)=80A  
Pulsed  
100  
I
D(DC)=20A  
80  
60  
40  
20  
V
GS =10.0 V  
4.5 V  
4.0 V  
1
T
C
= 25˚C  
Single Pulse  
0.1  
0
2
4
1
3
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
V
DS  
-
Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
10  
T
A
= −25˚C  
25˚C  
75˚C  
125˚C  
1
0
2
6
8
4
VGS - Gate to Source Voltage - V  
Data Sheet D12355EJ1V0DS00  
3
2SK2981  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 125 ˚C/W  
Rth(ch-c) = 6.25 ˚C/W  
1
0.1  
0.01  
Single Pulse  
T
C
= 25˚C  
0.001  
µ
10  
µ
1 m  
10 m  
100 m  
1
10  
100  
1000  
100  
PW - Pulse Width - s  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
100  
10  
1
V
DS = 10 V  
Pulsed  
Pulsed  
T
ch = −25˚C  
25˚C  
60  
75˚C  
125˚C  
40  
20  
ID = 10 A  
0.1  
0.1  
0
5
10  
15  
1
10  
100  
VGS - Gate to Source Voltage - V  
ID- Drain Current - A  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
80  
60  
40  
20  
0
V
DS = 10 V  
= 1 mA  
Pulsed  
2.0  
1.5  
1.0  
I
D
V
GS = 4.0 V  
4.5 V  
0.5  
0
10.0 V  
0.2  
1
10  
100  
− 50  
0
50  
100  
150  
Tch - Channel Temperature - ˚C  
ID - Drain Current - A  
4
Data Sheet D12355EJ1V0DS00  
2SK2981  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
Pulsed  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
80  
60  
100  
10  
1
VGS = 10 V  
V
GS = 4.0 V  
4.5 V  
40  
20  
0 V  
10.0 V  
0.1  
ID  
= 10 A  
150  
0
0
− 50  
100  
50  
0
1.5  
Tch - Channel Temperature - ˚C  
1.0  
0.5  
- Source to Drain Voltage - V  
V
SD  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
1000  
10000  
1000  
V
GS = 0 V  
t
r
f = 1 MHz  
t
f
100  
Ciss  
t
d(off)  
C
oss  
rss  
t
d(on)  
C
10  
1
100  
10  
V
V
DD = 15 V  
GS = 10 V  
RG  
= 10 Ω  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
D
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
40  
30  
20  
10  
I
D
= 20 A  
di/dt = 100 A/µs  
GS = 0 V  
V
GS = 10 V  
V
14  
12  
10  
8
V
GS  
V
DD = 24 V  
15 V  
6 V  
6
10  
1
4
2
0
VDS  
0.1  
1
10  
100  
0
3
6
9
12  
15  
24  
18  
21  
IF  
- Diode Current - A  
QG  
- Gate Charge - nC  
Data Sheet D12355EJ1V0DS00  
5
2SK2981  
[MEMO]  
6
Data Sheet D12355EJ1V0DS00  
2SK2981  
[MEMO]  
Data Sheet D12355EJ1V0DS00  
7
2SK2981  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  
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