请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK2984

型号：

2SK2984

描述：

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

66 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2984  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.  
FEATURES  
• Low on-resistance  
DS(on)1  
DS(on)2  
iss  
GS  
D
R
= 10 mΩ (MAX.) (V = 10 V, I = 20 A)  
GS  
D
R
= 15 mΩ (MAX.) (V = 4.5 V, I = 20 A)  
iss  
C
• Low C  
= 2850 pF TYP.  
• Built-in gate protection diode  
ORDERING INFORMATION  
PART NUMBER  
2SK2984  
PACKAGE  
TO-220AB  
TO-262  
2SK2984-S  
2SK2984-ZJ  
TO-263  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage Note1  
Gate to Source Voltage Note2  
Drain Current (DC)  
DSS  
V
V
30  
±20  
V
V
GSS  
D(DC)  
I
±40  
A
Drain Current (pulse)Note3  
D(pulse)  
I
±160  
1.5  
A
A
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
c
T
P
Total Power Dissipation (T = 25°C)  
60  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
−55 to +150  
Notes.1 VGS = 0 V  
2 VDS = 0 V  
3 PW ≤ 10 µ s, Duty Cycle ≤ 1 %  
.
The information in this document is subject to change without notice.  
Document No. D12356EJ1V0DS00 (1st edition)  
Date Published October 1998 NS CP (K)  
Printed in Japan  
1998  
©
2SK2984  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 20 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
6.5  
8.5  
1.5  
36  
10  
13  
mΩ  
mΩ  
V
VGS = 4.5 V, ID = 20 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 20 A  
VDS = 30 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
18  
2.0  
S
10  
µ A  
µ A  
pF  
pF  
pF  
ns  
IGSS  
±10  
Ciss  
VDS = 10 V  
VGS = 0 V  
f = 1 MHz  
2600  
1150  
500  
70  
Output Capacitance  
Coss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Crss  
td(on)  
ID = 20 A  
VGS(on) = 10 V  
VDD = 15 V  
RG = 10 Ω  
Rise Time  
tr  
1100  
210  
310  
65  
ns  
Turn-off Delay Time  
td(off)  
tf  
ns  
Fall Time  
ns  
Total Gate Charge  
QG  
ID = 40 A  
nC  
nC  
nC  
V
VDD = 24 V  
VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
9.5  
QGD  
12.5  
0.8  
VF(S-D)  
IF = 40 A, VGS = 0 V  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 40 A, VGS = 0 V  
50  
ns  
di/dt = 100 A /µS  
Qrr  
100  
nC  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
IG = 2 mA  
VGS  
RL  
RL  
90 %  
VGS  
VGS(on)  
10 %  
Wave Form  
0
RG  
RG = 10 Ω  
PG.  
PG.  
VDD  
VDD  
50 Ω  
90 %  
90 %  
ID  
ID  
VGS  
0
10 %  
10 %  
ID  
0
Wave Form  
tr  
td(on)  
td(off)  
tf  
τ
ton  
toff  
τ = 1µ s  
Duty Cycle ≤ 1 %  
2
2SK2984  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
TC - Case Temperature - ˚C  
TC -  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
Pulsed  
125  
100  
75  
I
D(pulse)  
VGS =10 V  
VGS = 4.5 V  
I
D(DC)  
50  
10  
1
T
C
= 25˚C  
Single Pulse  
0
1.0  
VDS - Drain to Source Voltage - V  
2.0  
0.1  
1
10  
100  
1.5  
0.5  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
10  
Tch = -25˚C  
25˚C  
125˚C  
1
VDS = 10 V  
0
2
6
8
4
VGS - Gate to Source Voltage - V  
3
2SK2984  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a) = 83.3 ˚C/W  
Rth(ch-c) = 2.08 ˚C/W  
1
0.1  
0.01  
Single Pulse  
TC = 25˚C  
0.001  
µ
100  
µ
10  
1 m  
10 m  
100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1000  
100  
10  
30  
20  
10  
VDS = 10 V  
Pulsed  
Pulsed  
Tch = -25˚C  
25˚C  
75˚C  
125˚C  
ID = 20 A  
1
1
10  
100  
1000  
0
5
10  
15  
ID- Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
30  
20  
10  
0
V
DS = 10 V  
= 1 mA  
Pulsed  
2.0  
1.5  
1.0  
I
D
V
GS = 4.5 V  
0.5  
0
V
GS =10 V  
100  
1
10  
ID - Drain Current - A  
- 50  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
4
2SK2984  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
Pulsed  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
100  
10  
1
20  
15  
VGS = 0 V  
V
GS = 4.5 V  
10  
5
V
GS = 10 V  
0.1  
ID  
= 20 A  
150  
0
0
- 50  
100  
50  
0
1.5  
1.0  
0.5  
- Source to Drain Voltage - V  
Tch - Channel Temperature - ˚C  
VSD  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
1000  
100  
V
GS = 0 V  
t
r
f = 1 MHz  
t
f
Ciss  
t
d(off)  
t
d(on)  
Coss  
Crss  
100  
10  
10  
1
V
V
R
DD = 15 V  
GS = 10 V  
G
= 10 Ω  
0.1  
1
10  
100  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
40  
30  
20  
10  
di/dt = 100 A/µs  
GS = 0 V  
ID = 40 A  
V
14  
12  
10  
8
V
GS  
V
DD = 24 V  
15 V  
6 V  
6
10  
1
4
2
0
VDS  
0.1  
1
10  
100  
0
20  
Q
40  
60  
80  
I
F
- Diode Current - A  
G
- Gate Charge - nC  
5
2SK2984  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (TO-220 Fin Cut:MP-25S)  
4.8 MAX.  
1.3±0.2  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
10.0  
(10)  
4
φ
3.6±0.2  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TO-263 (JEDEC TYPE:MP-25ZJ)  
4.8 MAX.  
(10)  
1.3±0.2  
EQUIVALENT CIRCUIT  
4
Drain  
Body  
Diode  
Gate  
1.4±0.2  
0.7±0.2  
0.5±0.2  
Gate  
Protection  
Diode  
2.54 TYP.  
2.54 TYP.  
1
2
3
Source  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
Remark  
The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
6
2SK2984  
[MEMO]  
7
2SK2984  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.168646s