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2SK3054

型号:

2SK3054

描述:

N沟道MOS场效应晶体管开关[ N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

53 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3054  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3054 is a switching device which can be driven  
directly by a 2.5-V power source.  
PART NUMBER  
2SK3054  
PACKAGE  
SC-70  
The 2SK3054 has excellent switching characteristics,  
and is suitable for use as a high-speed switching device  
in digital circuits.  
FEATURES  
Can be driven by a 2.5-V power source  
Low gate cut-off voltage  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
50  
±7  
V
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
D(DC)  
I
Drain Current (DC)  
±0.1  
A
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
D(pulse)  
I
±0.2  
A
T
P
150  
mW  
°C  
°C  
ch  
T
150  
stg  
T
–55 to +150  
Note PW 10 ms, Duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2000 NS CP(K)  
Printed in Japan  
D14209EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1999  
©
2SK3054  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Cut-off Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 50 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
1
µA  
µA  
V
Gate Leakage Current  
IGSS  
VGS = ±7 V, VDS = 0 V  
VDS = 3 V, ID = 1 µA  
VDS = 3 V, ID = 10 mA  
VGS = 2.5 V, ID = 10 mA  
VGS = 4.0 V, ID = 10 mA  
VDS = 3 V  
±5  
1.5  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
0.9  
20  
1.2  
38  
22  
14  
8
mS  
40  
20  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
VGS = 0 V  
7
Crss  
f = 1 MHz  
3
td(on)  
VDD = 3 V  
15  
100  
30  
35  
tr  
ID = 20 mA  
Turn-off Delay Time  
Fall Time  
td(off)  
VGS(on) = 3 V  
tf  
RG = 10 , RL = 150 Ω  
TEST CIRCUIT SWITCHING TIME  
D.U.T.  
V
GS  
RL  
90 %  
V
GS  
Wave Form  
VGS(on)  
10 %  
0
R
G
PG.  
VDD  
R = 10  
G
90 %  
I
D
90 %  
10 %  
I
D
V
0
GS  
10 %  
I
D
0
Wave Form  
t
r
t
d(on)  
td(off)  
t
f
τ
t
on  
toff  
τ = 1µ s  
Duty Cycle 1 %  
2
Data Sheet D14209EJ2V0DS00  
2SK3054  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
300  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Ambient Temperature - ˚C  
0
30  
60  
90 120 150 180  
T
A
T
A
- Ambient Temperature - ˚C  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
100  
10  
1
100  
80  
60  
40  
20  
Pulsed  
V
V
V
GS = 4.5 V  
GS = 4.0 V  
GS = 2.5 V  
T
A
= 150 ˚C  
75 ˚C  
25 ˚C  
25 ˚C  
0.1  
1.0  
2.0  
0
1.5  
0.5  
V
DS = 3 V  
6 7  
0.01  
V
DS - Drain to Source Voltage - V  
2
0
1
3
4
5
V
GS  
- Gate to Source Voltage - V  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
2.0  
V
DS = 3 V  
V
DS = 5 V  
I = 1 µA  
D
f = 1 kHz  
200  
100  
1.5  
1.0  
0.5  
10  
1
10  
100 200  
I
D
- Drain Current - mA  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
3
Data Sheet D14209EJ2V0DS00  
2SK3054  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
30  
20  
100  
Pulsed  
Pulsed  
V
GS = 2.5 V  
V
GS = 4.0 V  
10  
ID = 100 mA  
I = 10 mA  
D
10  
1
0.1  
1
10  
100  
I
D - Drain Current - mA  
0
1
3
5
7
8
9
2
4
6
10  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
25  
30  
V
GS = 2.5 V  
= 5 mA  
V
GS = 4.0 V  
= 5 mA  
ID  
ID  
25  
20  
15  
10  
20  
15  
0
0
100  
ch - Channel Temperature - ˚C  
150  
100  
150  
50  
50  
T
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
1 000  
100  
100  
V
GS = 0 V  
f = 1 MHz  
t
r
t
f
t
d(off)  
d(on)  
10  
Ciss  
t
10  
1
C
oss  
V
DD = 3 V  
V
= 3 V  
C
rss  
RGGSS = 10 Ω  
1
1000  
1
10  
100  
1
10  
DS - Drain to Source Voltage - V  
100  
I
D
- Drain Current - mA  
V
4
Data Sheet D14209EJ2V0DS00  
2SK3054  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
Pulsed  
VGS = 0 V  
100  
10  
1
0.1  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
V
SD - Source to Drain Voltage - V  
5
Data Sheet D14209EJ2V0DS00  
2SK3054  
PACKAGE DRAWING (Unit: mm)  
SC-70  
2.1±0.1  
1.25±0.1  
2
Electrode  
EQUIVALENT CIRCUIT  
Connection  
3
1. Source  
2. Gate  
Drain  
1
3. Drain  
Body  
Diode  
Gate  
Marking  
Gate  
Protection  
Diode  
Source  
Marking : G25  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
6
Data Sheet D14209EJ2V0DS00  
2SK3054  
[MEMO]  
7
Data Sheet D14209EJ2V0DS00  
2SK3054  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
厂商 型号 描述 页数 下载

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