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2SK3055

型号:

2SK3055

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

65 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3055  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
2SK3055  
Isolated TO-220  
FEATURES  
Low On-State Resistance  
DS(on)1  
GS  
D
R
R
= 34 mMAX. (V = 10 V, I = 15 A)  
DS(on)2  
GS  
D
= 50 mMAX. (V = 4.0 V, I = 15 A)  
iss  
iss  
Low C : C = 920 pF TYP.  
Built-in Gate Protection Diode  
Isolated TO-220 package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
60  
V
GSS(AC)  
V
V
±20  
+20, 10  
±30  
V
V
GSS(DC)  
D(DC)  
I
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±100  
25  
A
C
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
2.0  
ch  
T
Channel Temperature  
150  
stg  
Storage Temperature  
T
–55 to +150  
15  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
22.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
5.0  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
62.5  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 1999 NS CP(K)  
Printed in Japan  
D13094EJ1V0DS00 (1st edition)  
1997,1999  
©
2SK3055  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 15 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
24  
35  
1.6  
20  
34  
50  
mΩ  
mΩ  
V
VGS = 4.0 V, ID = 15 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 15 A  
VDS = 60 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
8.0  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
920  
280  
120  
25  
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
ID = 15 A  
Rise Time  
VGS(on) = 10 V  
300  
70  
Turn-off Delay Time  
VDD = 30 V  
Fall Time  
RG = 10 Ω  
120  
25  
Total Gate Charge  
QG  
ID = 30 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 48 V  
3.3  
7.0  
1.0  
45  
VGS(on) = 10 V  
IF = 30 A, VGS = 0 V  
If = 30 A, VGS = 0 V  
di/dt = 100 A/µs  
ns  
nC  
Qrr  
60  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
R
G
= 25 Ω  
90%  
GS(on)  
V
GS  
Wave Form  
V
10%  
10%  
0
R
G
PG.  
PG.  
50 Ω  
V
DD  
RG = 10 Ω  
VDD  
VGS = 200V  
I
D
90%  
90%  
10%  
I
D
V
0
GS  
BVDSS  
I
D
0
Wave Form  
I
AS  
VDS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
V
DD  
t
on  
toff  
τ = 1 µs  
Duty Cycle 1 %  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
V
DD  
2
Data Sheet D13094EJ1V0DS00  
2SK3055  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
T
C
-
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
80  
60  
40  
20  
I
D(pulse) = 100 A  
V
GS =10 V  
V
GS = 4.0 V  
ID(DC) = 30 A  
10  
1
T
C
= 25˚C  
Single Pulse  
Pulsed  
0
1
2
3
0.1  
1
10  
100  
V
DS  
-
Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
100  
10  
V
DS = 10 V  
T
A
= -25˚C  
25˚C  
1
75˚C  
125˚C  
0.1  
0
2
4
6
8
V
GS - Gate to Source Voltage - V  
3
Data Sheet D13094EJ1V0DS00  
2SK3055  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
Rth(ch-A) = 62.5 ˚C/W  
10  
Rth(ch-C) = 5.0 ˚C/W  
1
0.1  
T
C
= 25˚C  
Single Pulse  
0.01  
10  
µ
µ
1 m  
10 m  
100 m  
1
10  
100 1 000  
100  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
75  
100  
10  
Pulsed  
V
DS =10 V  
Pulsed  
50  
T
A
= 125˚C  
75˚C  
ID = 15 A  
25˚C  
25˚C  
25  
0
1.0  
0.1  
0.1  
1
10  
100  
10  
VGS - Gate to Source Voltage - V  
20  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
Pulsed  
V
DS = 10 V  
= 1 mA  
75  
50  
I
D
2.0  
1.5  
1.0  
VGS = 4.0 V  
V
GS = 10 V  
25  
0
0.5  
0
0.1  
10  
100  
1000  
50  
0
50  
100  
150  
I
D - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
Data Sheet D13094EJ1V0DS00  
2SK3055  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
1000  
100  
10  
80  
60  
VGS = 0 V  
VGS = 4.0 V  
VGS = 10 V  
40  
20  
VGS = 10 V  
1
ID = 16 A  
Pulsed  
1.5  
- Source to Drain Voltage - V  
Pulsed  
0
0.1  
0
0
1.0  
- 50  
0.5  
100  
150  
50  
VSD  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
10 000  
1 000  
100  
V
DD = 30 V  
V
GS = 0 V  
V
GS = 10 V  
f = 1 MHz  
R
G
= 10 Ω  
t
r
Ciss  
t
f
t
tdd((oofnf))  
Coss  
100  
10  
Crss  
10  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
16  
80  
di/dt = 100 A/µs  
GS = 0 V  
V
60  
40  
20  
12  
8
V
DD = 48 V  
30 V  
VGS  
12 V  
10  
1
4
V
DS  
I
D
= 30 A  
40  
0.1  
1.0  
10  
100  
0
10  
20  
30  
I
F
- Drain Current - A  
QG  
- Gate Charge - nC  
5
Data Sheet D13094EJ1V0DS00  
2SK3055  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
160  
100  
10  
V
R
V
I
DD = 30 V  
= 25 Ω  
GS = 20 V 0 V  
AS 15 A  
G
140  
120  
100  
80  
I
AS = 15 A  
60  
1
40  
R
V
V
G = 25 Ω  
20  
0
DD = 30 V  
GS = 20 V 0 V  
Starting Tch = 25 ˚C  
0.1  
10µ  
µ
25  
50  
75  
100  
125  
150  
100  
1 m  
10 m  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13094EJ1V0DS00  
2SK3055  
PACKAGE DRAWING (Unit : mm)  
Isolated TO-220 (MP-45F)  
10.0  
±
0.3  
4.5 ± 0.2  
φ3.2  
± 0.2  
2.7  
± 0.2  
EQUIVALENT CIRCUIT  
Drain (D)  
Body  
Diode  
Gate (G)  
Gate  
Protection  
Diode  
0.7  
±
0.1  
1.3  
±
0.2  
2.5  
0.65 ± 0.1  
± 0.1  
Source (S)  
1.5  
±
0.2  
2.54  
2.54  
1.Gate  
2.Drain  
3.Source  
1
2 3  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
7
Data Sheet D13094EJ1V0DS00  
2SK3055  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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