Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
unit: mm
● High-speed switching
● No secondary breakdown
● High electrostatic breakdown voltage
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
0.5±0.1
■ Applications
● High-speed switching (switching power supply)
1.0±0.1
0.1±0.05
● For high-frequency power amplification
0.93±0.1
0.5±0.1
■ Absolute Maximum Ratings (TC = 25°C)
0.75±0.1
2.3±0.1
4.6±0.1
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
400
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±20
V
1: Gate
2: Drain
3: Source
±0.5
A
1
2
3
Drain current
IDP
±1
A
U Type Package
EAS*
0.25
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
10
PD
W
1
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 2mH, IL = 0.5A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
VDS = 320V, VGS = 0
10
±1
IGSS
VGS = ±20V, VDS = 0
Drain to Source breakdown voltage VDSS
ID = 1mA, VGS = 0
400
1
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.1A
VDS = 10V, ID = 0.1A
IDR = 0.1A, VGS = 0
3
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
17
23
Ω
100
160
mS
V
−1.5
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
48
10
5
pF
VDS = 10V, VGS = 0, f = 1MHz
pF
pF
Turn-on time (delay time)
Rise time
td(on)
tr
65
35
40
70
ns
VDD = 100V, ID = 0.1A
ns
Fall time
tf
VGS = 10V, RL = 1Ω
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
ns
12.5
125
°C/W
°C/W
1
