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2SK3125

型号：

2SK3125

描述：

东芝场效应晶体管硅N沟道MOS型（ PIE - MOSVI ）[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

219 K

下载PDF手册
                                                        
                                                        
2SK3125  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)  
2SK3125  
DC-DC Converter, Relay Drive and  
Motor Drive Applications  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 5.3 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 60 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 30 V)  
DSS  
Enhancement-model: V = 1.5~3.0 V (V  
DS  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
30  
30  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
±20  
70  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
210  
150  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
JEDEC  
JEITA  
―
―
D
AS  
AR  
Single pulse avalanche energy  
E
955  
mJ  
(Note 2)  
TOSHIBA  
2-16H1A  
Avalanche current  
I
70  
15  
A
Weight: 3.65 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
R
0.833  
°C/W  
th (ch-c)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V = 25 V, T = 25°C, L = 140 mH, R = 25 W, I = 70 A  
DD ch AR  
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-08-23  
                                                                    
                                                                     
                                                                                                  
                                                                                                  
2SK3125  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±16 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
¾
¾
¾
¾
±10  
100  
¾
mA  
mA  
V
GSS  
GS  
DS  
DS  
Drain cut-OFF current  
= 30 V, V  
= 0 V  
= 0 V  
DSS  
GS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
I
= 10 mA, V  
D
30  
1.5  
¾
¾
(BR) DSS  
V
V
V
V
= 10 V, I = 1 mA  
¾
3.0  
7.0  
¾
V
th  
DS  
GS  
DS  
D
R
= 10 V, I = 30 A  
5.3  
60  
mW  
S
DS (ON)  
D
ïY ï  
fs  
= 10 V, I = 30 A  
30  
¾
D
C
C
4600  
1400  
2300  
¾
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
¾
Rise time  
t
¾
¾
¾
25  
40  
¾
¾
¾
r
10 V  
I = 30 A  
D
V
GS  
V
OUT  
0 V  
Turn-ON time  
Switching time  
t
on  
R
= 0.5 W  
L
Fall time  
t
150  
f
~
-
V
15 V  
DD  
<
Duty 1%, t = 10 ms  
=
w
Turn-OFF time  
t
¾
¾
425  
130  
¾
off  
Total gate charge  
Q
¾
g
(gate-source plus gate-drain)  
~
V
24 V, V  
= 10 V, I = 70 A  
nC  
-
DD  
GS  
D
Gate-source charge  
Q
Q
¾
¾
90  
40  
¾
¾
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
70  
210  
-1.7  
¾
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 70 A, V  
= 70 A, V  
= 0 V  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
150  
225  
ns  
nC  
rr  
dI /dt = 50 A/ms  
Q
¾
DR  
rr  
Marking  
TOSHIBA  
K3125  
※
※ Lot Number  
Type  
Month (starting from alphabet A)  
Year (last number of the christian era)  
2
2002-08-23  
2SK3125  
I
- V  
I - V  
D DS  
D
DS  
100  
80  
100  
10  
5
10  
8
Common source  
Tc = 25°C  
Pulse test  
Common source  
5
4.5  
4.5  
Tc = 25°C  
6
Pulse test  
80 6  
4.25  
8
4
4
60  
40  
20  
60  
40  
20  
3.75  
V
OU  
3.5  
3.5  
V = 3.25 V  
GS  
V
GS  
= 3.25 V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1
2
3
4
5
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
- V  
V
- V  
GS  
D
GS  
DS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
Common source  
Tc = 25°C  
Pulse test  
100  
80  
60  
40  
20  
0
I
= 70 A  
D
25  
Tc = -55°C  
30  
100  
Common source  
V
= 10 V  
DS  
Pulse test  
5
15  
10  
0
0
0
1
2
3
4
6
2
4
6
8
12  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
(V)  
GS  
GS  
ïY ï - I  
R
- I  
fs  
D
DS (ON)  
D
1000  
100  
10  
100  
25  
Tc = -55°C  
100  
10  
V
= 10, 15 V  
GS  
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
DS  
Pulse test  
Pulse test  
1
1
1
10  
Drain current  
100  
(A)  
1000  
1
100  
10  
Drain current  
I
D
I
D
(A)  
3
2002-08-23  
2SK3125  
R
- Tc  
I
- V  
DR DS  
DS (ON)  
20  
16  
12  
8
1000  
100  
10  
Common source  
V
= 10 V  
GS  
Pulse test  
10  
5
3
1
I
= 15, 30 A  
D
V
GS  
= 0 V, -1 V  
70  
4
Common source  
Tc = 25°C  
Pulse test  
0
1
-80  
-40  
0
40  
80  
120  
160  
160  
200  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Case temperature Tc (°C)  
Drain-source voltage  
V
(V)  
DS  
V
– Tc  
Dynamic input/output characteristics  
th  
5
4
50  
25  
Common source  
I
= 70 A  
D
Tc = 25°C  
Pulse test  
40  
30  
20  
20  
15  
10  
12  
3
2
1
V
DS  
6
V
DD  
= 24 V  
Common source  
10  
0
5
0
V
= 10 V  
DS  
= 1 mA  
V
GS  
I
D
Pulse test  
0
-80  
-40  
0
40  
80  
120  
0
40  
80  
120  
Q
160  
200  
Case temperature Tc (°C)  
Total gate charge  
(nC)  
g
P
- Tc  
D
200  
150  
100  
50  
0
0
40  
80  
120  
160  
Case temperature Tc (°C)  
4
2002-08-23  
2SK3125  
r
th  
- t  
w
10  
1
Duty = 0.5  
0.2  
P
DM  
0.1  
0.1  
0.01  
t
0.05  
0.02  
T
Single pulse  
Duty = t/T  
th (ch-c)  
R
= 0.833°C/W  
0.01  
10 m  
100 m  
1 m  
10 m  
Pulse width  
100 m  
1
10  
t
w
(S)  
Safe operating area  
E
– T  
AS ch  
1000  
1000  
I
max (pulse) *  
800  
600  
400  
D
100 ms *  
I
max  
D
1 ms *  
100  
10  
1
(continuous)  
DC operation  
Tc = 25°C  
200  
0
* Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
V
max  
(V)  
25  
50  
75  
100  
125  
(°C)  
150  
DSS  
Channel temperature (initial)  
T
0.1  
1
10  
100  
ch  
Drain-source voltage  
V
DS  
B
VDSS  
15 V  
I
AR  
-15 V  
V
V
DS  
DD  
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
B
VDSS  
VDSS  
R
V
= 25 W  
DD  
G
=
×L×I  
×
Ε
AS  
ç
2
-
= 25 V、L = 140 mH  
B
V
DD  
è
5
2002-08-23  
2SK3125  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2002-08-23  
厂商 型号 描述 页数 下载

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ETC

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ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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ETC

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PANASONIC

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PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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