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2SK3233

型号：

2SK3233

描述：

硅N沟道MOS FET高速电源开关[ Silicon N Channel MOS FET High Speed Power Switching ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

10 页

PDF大小：

49 K

下载PDF手册
2SK3233  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-1369 (Z)  
1st. Edition  
Mar. 2001  
Features  
•
•
•
•
•
Low on-resistance: RDS(on) = 1.1 Ω typ.  
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)  
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)  
Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)  
Avalanche ratings  
Outline  
TO–220CFM  
D
G
1
2
3
1. Gate  
2. Drain  
3. Source  
S
2SK3233  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
500  
±30  
5
VGSS  
ID  
V
A
Note1  
Drain peak current  
ID  
20  
5
A
(pulse)  
Body-drain diode reverse drain  
current  
IDR  
A
Note1  
Body-drain diode reverse drain peak  
current  
IDR  
20  
A
(pulse)  
Note3  
Avalanche current  
IAP  
5
A
Channel dissipation  
Pch Note2  
θ ch-c  
Tch  
30  
W
Channel to case Tehrmal Impedance  
Channel temperature  
4.17  
°C/W  
°C  
150  
Storage temperature  
Tstg  
–55 to +150  
°C  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%  
2. Value at Tc = 25°C  
3. Tch ≤ 150°C  
2
2SK3233  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
500  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source leak current  
IGSS  
—
—
3.0  
—
—
—
—
1.1  
±0.1  
1
µA  
µA  
V
VGS = ±30 V, VDS = 0  
VDS = 500 V, VGS = 0  
VDS = 10 V, ID = 1 mA  
ID = 2.5 A, VGS = 10 V Note4  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage  
VGS(off)  
4.0  
1.5  
Static drain to source on state RDS(on)  
resistance  
Ω
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
3.0  
—
—
—
—
—
—
—
—
—
—
—
4.5  
580  
70  
13  
20  
15  
65  
15  
15  
3
—
—
—
—
—
—
—
—
—
—
—
1.3  
S
ID = 2.5 A, VDS = 10 V Note4  
VDS = 25 V  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
VGS = 0  
f = 1 MHz  
ID = 2.5 A  
VGS = 10 V  
Turn-off delay time  
Fall time  
td(off)  
tf  
RL = 100 Ω  
Rg = 10 Ω  
Total gate charge  
Gate to source charge  
Gate to drain charge  
Qg  
VDD = 400 V  
VGS = 10 V  
Qgs  
Qgd  
VDF  
8
ID = 5 A  
Body-drain diode forward  
voltage  
0.85  
IF = 5 A, VGS = 0  
Body-drain diode reverse  
recovery time  
trr  
—
—
400  
1.5  
—
—
ns  
IF = 5 A, VGS = 0  
Body-drain diode reverse  
recovery charge  
Qrr  
µC  
diF/dt = 100 A/µs  
Note: 4. Pulse test  
3
2SK3233  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
100  
40  
30  
20  
10  
30  
10  
3
1
0.3  
0.1  
0.03  
0.01  
Operation in  
this area is  
limited by RDS(on)  
Ta = 25°C  
0
30  
300  
1000  
50  
100  
150  
200  
1
3
10  
100  
Drain to Source Voltage VDS (V)  
Case Temperature Tc (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
= 10 V  
10  
8
10  
8
Pulse Test  
5.5 V  
6 V  
V
DS  
8 V  
10 V  
Pulse Test  
6
6
5 V  
4
4
Tc = 75°C  
25°C  
2
4.5 V  
= 4V  
2
–25°C  
V
GS  
0
0
2
4
6
8
10  
10  
20  
30  
40  
50  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
4
2SK3233  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
5
20  
16  
12  
8
Pulse Test  
Pulse Test  
V
GS  
= 10 V, 15 V  
2
1
0.5  
I
= 5 A  
D
4
0.2  
0.1  
2 A  
1 A  
0
6
20 50  
2
4
8
10  
1
2
10  
5
0.1 0.2 0.5  
Drain Current ID (A)  
Gate to Source Voltage VGS (V)  
Static Drain to Source on State Resistance  
vs. Temperature  
Forward Transfer Admittance vs.  
Drain Current  
50  
5
Pulse Test  
20  
10  
5
V
= 10 V  
4
3
2
1
GS  
Tc = –25°C  
I
= 5 A  
D
2
1
25°C  
75°C  
2 A  
0.5  
1 A  
80  
DS  
V
= 10 V  
Pulse Test  
10 20  
Drain Current ID (A)  
0.2  
0.1  
0
–40  
0.2 0.5  
1
2
5
0
40  
120  
160  
0.1  
50  
Case Temperature Tc (°C)  
5
2SK3233  
Typical Capacitance vs.  
Drain to Source Voltage  
Body-Drain Diode Reverse  
Recovery Time  
5000  
1000  
500  
V
GS  
= 0  
2000  
1000  
500  
f = 1 MHz  
Ciss  
200  
200  
100  
50  
100  
50  
Coss  
Crss  
20  
10  
5
20  
10  
di / dt = 100 A / µs  
V
= 0, Ta = 25°C  
GS  
0.1 0.3  
1
3
10  
30  
100  
0
50  
100  
150  
200  
250  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
I = 5 A  
Switching Characteristics  
= 10 V, V = 250 V  
GS  
1000  
500  
1000  
20  
V
D
DD  
PW = 10 µs, duty < 1 %  
R =10 Ω  
V
GS  
800  
600  
400  
200  
16  
12  
8
G
V
= 100 V  
250 V  
DD  
200  
100  
50  
400 V  
t
d(off)  
V
DS  
t
f
t
d(on)  
4
0
V
= 400 V  
250 V  
DD  
20  
10  
100 V  
t
r
0
10  
20  
30  
40  
50  
0.1 0.3  
1
3
10  
30  
100  
Drain Current ID (A)  
Gate Charge Qg (nC)  
6
2SK3233  
Gate to Source Cutoff Voltage  
vs. Case Temperature  
Reverse Drain Current vs.  
Source to Drain Voltage  
5
4
3
2
10  
8
V
= 10 V  
DS  
I = 10mA  
D
5, 10 V  
1mA  
6
V
= 0 V  
GS  
0.1mA  
4
1
0
2
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
200  
Case Temperature Tc (°C)  
Source to Drain Voltage VSD (V)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
10Ω  
V
DD  
Vin  
10 V  
Vout  
10%  
= 250 V  
90%  
td(off)  
td(on)  
t
f
tr  
7
2SK3233  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
0.03  
0.01  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 4.17°C/W, Tc = 25°C  
PW  
T
P
DM  
D =  
0.003  
0.001  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
Pulse Width PW (s)  
100 m  
1
10  
8
2SK3233  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.5 ± 0.3  
2.7 ± 0.2  
10.0 ± 0.3  
φ 3.2 ± 0.2  
1.0 ± 0.2  
1.15 ± 0.2  
2.5 ± 0.2  
0.6 ± 0.1  
2.54  
2.54  
0.7 ± 0.1  
Hitachi Code  
JEDEC  
TO-220CFM  
—
EIAJ  
—
Mass (reference value)  
1.9 g  
9
2SK3233  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
10  
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