2SK3262-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-source on-state resistance
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on)=f(Tch):ID=10A,VGS=10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
250
200
150
100
50
max.
typ.
max.
typ.
min.
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25°C
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
200
180
160
140
120
100
80
20
18
16
14
12
10
8
100n
VDS
VGS
Vcc=160V
100V
10n
40V
Ciss
1n
60
6
40
4
Coss
Crss
20
2
0
0
100p
10-2
10-1
100
101
102
0
20
40
60
80
100
Qg [nC]
120
140
160
180
200
VDS [V]
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
50
40
30
20
10
0
25
20
15
10
5
10V
VGS=0V
0
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
VSD [V]
0.8
1.0
1.2
Starting Tch [°C]
3
