找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3326

型号:

2SK3326

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

72 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3326  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3326 is N-Channel DMOS FET device that features  
a low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching power  
supply, AC adapter.  
PART NUMBER  
2SK3326  
PACKAGE  
Isolated TO-220  
(Isolated TO-220)  
FEATURES  
Low gate charge :  
G
DD  
GS  
D
Q = 22 nC TYP. (V = 400 V, V = 10 V, I = 10 A)  
Gate voltage rating : ±30 V  
Low on-state resistance :  
DS(on)  
R
GS  
D
= 0.85 MAX. (V = 10 V, I = 5.0 A)  
Avalanche capability ratings  
Isolated TO-220(MP-45F) package  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
500  
±30  
V
V
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
I
Drain Current (DC)  
±10  
A
Drain Current (pulse) Note1  
D(pulse)  
I
±40  
A
C
T
Total Power Dissipation (T = 25°C)  
P
40  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
2.0  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
10  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
10.7  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25, VGS = 20 V 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
D14204EJ1V0DS00 (1st edition)  
Date Published March 2000 NS CP(K)  
Printed in Japan  
2000  
©
2SK3326  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 500 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
100  
±100  
3.5  
µA  
nA  
V
Gate to Source Leakage Current  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
IGSS  
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
2.5  
2.0  
VDS = 10 V, ID = 5.0 A  
VGS = 10 V, ID = 5.0 A  
4.0  
0.68  
1200  
190  
10  
S
0.85  
VDS = 10 V, VGS = 0 V, f = 1 MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
td(on)  
tr  
td(off)  
tf  
VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,  
21  
RG = 10 Ω, RL = 60 Ω  
Rise Time  
11  
Turn-off Delay Time  
40  
Fall Time  
9.5  
22  
Total Gate Charge  
QG  
VDD = 400 V, VGS = 10 V, ID = 10 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
QGD  
VF(S-D)  
6.5  
7.5  
1.0  
IF = 10 A, VGS = 0 V  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 10 A, VGS = 0 V, di/dt = 50 A/µs  
0.5  
2.6  
µs  
Qrr  
µC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
RG  
= 25 Ω  
90%  
90%  
V
GS  
Wave Form  
V
GS(on)  
10%  
0
R
G
PG.  
PG.  
50 Ω  
V
DD  
VDD  
V
GS = 200V  
I
D
90%  
I
D
V
0
GS  
BVDSS  
10%  
10%  
I
D
0
Wave Form  
I
AS  
VDS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
VDD  
t
on  
toff  
τ = 1 µs  
Duty Cycle 1 %  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
V
DD  
2
Data Sheet D14204EJ1V0DS00  
2SK3326  
TYPICAL CHARACTERISTICS(TA = 25 °C)  
Figure1. DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
Figure2. TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
50  
40  
80  
30  
20  
10  
60  
40  
20  
20  
40  
60  
- Case Temperature - ˚C  
Figure4. DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
80 100 120 140 160  
0
0
20  
40  
60  
- Case Temperature - ˚C  
Figure3. FORWARD BIAS SAFE OPERATING AREA  
80 100 120 140 160  
Tc  
T
c
100  
10  
1
20  
I
D (pulse)  
Pulsed  
VGS = 20 V  
I
D (DC)  
10 V  
8.0 V  
1ms  
Power DissipatioLimited  
10  
VGS = 6.0 V  
T
c
= 25 ˚C  
Single Pulse  
0.1  
1
10  
100  
1000  
0
4
8
12  
16  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
Figure5. DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
100  
Pulsed  
10  
1
0.1  
T = –25 ˚C  
A
25 ˚C  
75 ˚C  
125 ˚C  
0.01  
0.001  
0.0001  
0
5
10  
15  
VGS - Gate to Source Voltage - V  
3
Data Sheet D14204EJ1V0DS00  
2SK3326  
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
10  
Rth(ch-A) = 62.5 ˚C/W  
Rth(ch-C) = 3.2 ˚C/W  
1
0.1  
T
c
= 25 ˚C  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PW - Pulse Width - s  
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
Figure7. FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
10  
2.0  
1
0.1  
T
A
= –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
I
D
= 10 A  
5.0 A  
2.0 A  
1.0  
VDS = 10 V  
Pulsed  
Pulsed  
20 25  
0.01  
0.0  
0.01  
0.1  
1
10  
100  
0
5
10  
15  
V
GS - Gate to Source Voltage - V  
I
D
- Drain Current - A  
Figure9. DRAIN TO SOURCE ON-STATE  
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
RESISTANCE vs. DRAIN CURRENT  
3.0  
4.0  
Pulsed  
VDS = 10 V  
I
D
= 1 mA  
3.0  
2.0  
1.0  
0.0  
2.0  
1.0  
0
–50  
0
50  
100  
150  
200  
0.1  
1
10  
100  
T
ch - Channel Temperature - ˚C  
ID  
- Drain Current - A  
4
Data Sheet D14204EJ1V0DS00  
2SK3326  
Figure12. SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
3.0  
100  
10  
Pulsed  
2.0  
I
D
= 10 A  
VGS = 10 V  
1
I = 5.0 A  
D
1.0  
0.0  
V
GS = 0 V  
0.1  
V
GS = 10 V  
0.01  
–50  
0
50  
100  
150  
1.5  
0.0  
0.5  
1.0  
T
ch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
Figure13. CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
Figure14. SWITCHING CHARACTERISTICS  
1000  
100  
t
r
10000  
V
GS = 0 V  
f = 1.0 MHz  
Ciss  
t
f
1000  
100  
Coss  
t
t
d(on)  
d(off)  
10  
1
10  
1
Crss  
V
DD = 150 V  
GS = 10 V  
V
R
G
= 10 Ω  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
ID  
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
800  
Figure15. REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
1000  
900  
800  
700  
I = 10 A  
D
14  
12  
10  
8
700  
600  
500  
400  
300  
200  
100  
di/dt = 50 A/µs  
GS = 0 V  
V
V
DD = 400 V  
250 V  
VGS  
100 V  
600  
500  
400  
300  
200  
100  
0
6
4
2
V
DS  
0
0
5
10  
15  
20  
25  
0.1  
1
10  
100  
Q
G
- Gate Charge - nC  
I
F
- Drain Current - A  
5
Data Sheet D14204EJ1V0DS00  
2SK3326  
Figure18. SINGLE AVALANCHE ENERGY vs  
INDUCTIVE LOAD  
Figure17. SINGLE AVALANCHE ENERGY vs  
STARTING CHANNEL TEMPERATURE  
16  
14  
12  
10  
8
100  
10  
1
R
G
= 25 Ω  
DD = 150 V  
GS = 20 V 0 V  
Starting Tch = 25 ˚C  
I
D(peak) = IAS  
V
R
G
= 25 Ω  
V
V
V
GS = 20 V 0 V  
DD = 150 V  
I
AS = 10 A  
E
AS = 10.7 mJ  
6
4
2
0
0.1  
25  
50  
75  
100  
125  
150  
175  
10 µ  
1 m  
L - Inductive Load - H  
10 m  
100 µ  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D14204EJ1V0DS00  
2SK3326  
PACKAGE DRAWING (Unit: mm)  
Isolated TO-220(MP-45F)  
4.5±0.2  
10.0±0.3  
3.2±0.2  
2.7±0.2  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
2.5±0.1  
0.65±0.1  
0.7±0.1  
2.54  
1.3±0.2  
1.5±0.2  
2.54  
Source  
1. Gate  
2. Drain  
3. Source  
1
2 3  
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
7
Data Sheet D14204EJ1V0DS00  
2SK3326  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.166522s