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2SK3349

型号：

2SK3349

描述：

硅N沟道MOS场效应管高速开关[ Silicon N Channel MOS FET High Speed Switching ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

8 页

PDF大小：

42 K

下载PDF手册
2SK3349  
Silicon N Channel MOS FET  
High Speed Switching  
ADE-208-804 (Z)  
1st.Edition.  
June 1999  
Features  
•
Low on-resistance  
RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)  
RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)  
2.5 V gate drive device  
•
•
Small package (SMPAK)  
Outline  
SMPAK  
3
1
2
D
G
1. Source  
2. Gate  
3. Drain  
S
2SK3349  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
20  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
ID  
±10  
V
50  
mA  
mA  
mA  
mW  
°C  
Note1  
Drain peak current  
ID(pulse)  
200  
Body-drain diode reverse drain current IDR  
50  
Channel dissipation  
Pch Note 2  
100  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
°C  
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%  
2. Value on the alumina ceramic board (12.5x20x0.7 mm)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
20  
—
—
V
ID = 100 µA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
±10  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
IGSS  
IDSS  
—
—
—
—
±5  
µA  
µA  
VGS = ±8 V, VDS = 0  
Zero gate voltege drain  
current  
1
VDS = 20 V, VGS = 0  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
0.8  
—
—
56  
—
—
—
—
—
—
—
—
1.8  
3.6  
7.2  
—
V
ID = 10 µA, VDS = 5 V  
ID = 25 mA,VGS = 4 V Note 3  
ID = 10 mA,VGS = 2.5 V Note 3  
ID = 25 mA, VDS = 10 V Note 3  
VDS = 10 V  
2.8  
4.8  
85  
Ω
resistance  
RDS(on)  
Ω
Forward transfer admittance |yfs|  
mS  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Input capacitance  
Output capacitance  
Ciss  
6
—
Coss  
7
—
VGS = 0  
Reverse transfer capacitance Crss  
1.2  
120  
450  
480  
500  
—
f = 1 MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
—
ID = 25 mA, VGS = 4 V  
RL = 400 Ω  
—
Turn-off delay time  
Fall time  
—
—
Note: 3. Pulse test  
4. Marking is DN  
2
2SK3349  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
5
200  
150  
100  
50  
2
1.0  
0.5  
0.2  
10 µs  
100 µs  
1 ms  
0.1  
0.05  
0.02  
0.01  
Operation in this area  
is limited by RDS(on)  
0.005  
0.002  
0.001  
0.0005  
2
5
0.05 0.1  
1.0  
10  
50  
0.2 0.5  
20  
(V)  
0
50  
100  
150  
200  
Drain to Source Voltage  
V
Ambient Temperature Ta ( °C)  
DS  
Value on the alumina ceramic boad.(12.5x20x0.7mm)  
*Value on the alumina ceramic boad.(12.5x20x0.7mm)  
Typical Output Characteristics  
5 V  
Typical Transfer Characteristics  
0.2  
0.2  
Pulse Test  
V
= 10 V  
DS  
Pulse Test  
4 V  
3 V  
0.16  
0.12  
0.08  
0.04  
0.16  
0.12  
0.08  
0.04  
25 °C  
Tc = –25 °C  
75 °C  
V
= 2V  
(V)  
GS  
0
0
1
2
3
4
5
2
4
6
8
10  
Gate to Source Voltage  
V
GS  
(V)  
Drain to Source Voltage  
V
DS  
3
2SK3349  
Drain to Source Satueation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
50  
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
20  
10  
2.5 V  
5
V
GS  
= 4V  
2
1.0  
0.5  
10m A  
25m A  
I
= 50mA  
8
D
V
6
0
2
4
10  
0.01  
0.02  
0.05  
I (A)  
D
0.1  
Drain Current  
Gate to Source Voltage  
(V)  
GS  
Forward Transfer Admittance  
vs. Drain Current  
Static Drain to Source on State  
Resistance vs. Temperature  
0.5  
10  
8
V
= 10 V  
DS  
Tc = –25 °C  
Pulse Teat  
0.2  
0.1  
I
= 25m A  
D
25 °C  
6
V
= 2.5 V  
GS  
75 °C  
0.05  
10mA  
4
2
0.02  
0.01  
10,25,50m A  
4 V  
0
Pulse Test  
120 160  
0
–40  
0.005  
0.001  
0.002  
0.005  
0.1  
40  
80  
Drain Current I (A)  
D
Case Temperature Tc (°C)  
4
2SK3349  
Typical Capacitance  
vs. Drain to Source Voltage  
Switching Characteristics  
10  
1.0  
0.1  
10000  
1000  
Ciss  
Coss  
t
r
Crss  
t
f
t
d(off)  
t
100  
10  
d(on)  
V
= 2.5 V, V  
= 10 V  
V
GS  
= 0  
GS  
PW = 5 µs, duty < 1 %  
DD  
f = 1 MHz  
0.01  
0.02  
Drain Current  
0.1  
0.05  
(A)  
0
4
8
12  
16  
20  
I
Drain to Source Voltage  
V
(V)  
D
DS  
Reverse Drain Current  
vs. Source to Drain Voltage  
0.2  
0.16  
0.12  
0.08  
0.04  
10 V  
V
= 0,-5V  
GS  
5 V  
Pulse Test  
1.6  
0
0.4  
0.8  
1.2  
2.0  
Source to Drain Voltage  
V
(V)  
SD  
5
2SK3349  
Switching Time Test Circuit  
Waveforms  
Vout  
Monitor  
Vin Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
4 V  
Vout  
10%  
50  
= 10 V  
90%  
td(off)  
td(on)  
t
f
tr  
6
2SK3349  
Package Dimensions  
Unit: mm  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.15  
0.3  
0 ~ 0.1  
+ 0.1  
– 0.05  
0.2  
+ 0.1  
– 0.0.5  
0.5  
0.5  
1.0  
.1.6  
0.2  
+ 0.1  
– 0.1  
+ 0.2  
– 0.2  
SMPAK  
Hitachi Code  
EIAJ  
–
JEDEC  
–
7
2SK3349  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
8
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 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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