2SK3352
P- Channel Silicon MOS FET
DC-DC Converter
TENTATIVE
Features and Applications
• Low ON-state resistance.
• Very high - speed switching.
• 4V drive.
Absolute Maximum Ratings / Ta=25°C
unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
30
V
V
VGSS
20
ID
45
A
Drain Current (Pulse)
IDP PW≤10µs, duty cycle≤1%
PD
80
1.65
A
Allowable power Dissipation
W
W
°C
°C
Tc=25°C
Tch
40
Channel Temperature
Storage Temperature
150
Tstg
--55 to +150
Electrical Characteristics / Ta=25°C
min
30
typ
max
unit
V
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
ID=1mA
,
VGS=0
VDS=30V , VGS=0
VGS= 16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=20A
1
10
µA
µA
V
1.0
19
2.4
Forward Transfer Admittance
Static Drain to Source
on State Resistance
27
11
S
ID=20A
ID=10A
,
,
VGS=10V
VGS=4.5V
15
21
mΩ
mΩ
pF
pF
pF
ns
15
Input Capacitance
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
1400
420
210
14
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Crss
td(on)
tr
530
100
150
28
ns
See specified Test Circuit
Turn-oFF Delay Time
Fall Time
td(off)
tf
ns
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate Source Charge
Qgs
VDS=10V, VGS=10V, ID=20A
IS=45A VGS= 0
4.6
5
Gate Drain Charge
Qgd
Diode Forward Voltage
VSD
,
1.0
1.2
Marking : K3352
Package Dimensions
SMP-FD (unit : mm)
SMP(unit:mm)
SMP-FA (unit : mm)
10.2
4.5
10.2
4.5
1.3
1.3
4.5
4
10.2
4
30°
4
30°
1.3
1.2
1.2
1
2
3
0to0.3
0.4
0.8
0.8
0.4
1.2
2.55
0.8
1
2
3
2.55
0.4
1 : Gate
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.55
2.55
2 : Drain
3 : Source
4 : Drain
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.55
2.55
2.55
2.55
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990915TM2fXHD
