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2SK3357

型号:

2SK3357

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

70 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3357  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
The 2SK3357 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-3P  
2SK3357  
FEATURES  
Super low on-state resistance:  
DS(on)1  
GS  
D
R
R
= 5.8 mMAX. (V = 10 V, I = 38 A)  
(TO-3P)  
DS(on)2  
GS  
D
= 8.8 mMAX. (V = 4.0 V, I = 38 A)  
iss  
iss  
Low C : C = 9800 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS(AC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±75  
A
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±300  
150  
A
W
W
°C  
°C  
A
PT  
3.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
75  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
562  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
0.83  
41.7  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2000 NS CP(K)  
Printed in Japan  
D14134EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1999, 2000  
©
2SK3357  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 38 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
4.6  
6.1  
2.0  
72  
5.8  
8.8  
2.5  
mΩ  
mΩ  
V
VGS = 4.0 V, ID = 38 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 38 A  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.5  
38  
S
VDS = 60 V, VGS = 0 V  
VGS = ±20 V, VDS = 0V  
VDS = 10 V, VGS = 0 V, f = 1 MHz  
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
9800  
1500  
630  
105  
1350  
500  
480  
170  
28  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
td(on)  
tr  
td(off)  
tf  
ID = 38 A, VGS(on) = 10 V, VDD = 30 V,  
Rise Time  
RG = 10 Ω  
Turn-off Delay Time  
Fall Time  
Total Gate Charge  
QG  
ID = 75 A , VDD = 48 V, VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
46  
IF = 75 A, VGS = 0 V  
IF = 75 A, VGS = 0 V,  
di/dt = 100 A/µs  
0.96  
64  
ns  
nC  
Qrr  
130  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25  
V
GS  
R
L
90 %  
90 %  
PG.  
V
GS  
V
GS(on)  
10 %  
V
DD  
50 Ω  
Wave Form  
0
R
G
V
GS = 20 0 V  
PG.  
V
DD  
90 %  
I
D
BVDSS  
I
D
I
AS  
V
0
GS  
10 %  
10 %  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
d(on)  
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle 1 %  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
R
L
PG.  
VDD  
50 Ω  
2
Data Sheet D14134EJ2V0DS00  
2SK3357  
TYPICAL CHARACTERISTICS (TA = 25 °C )  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
175  
150  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
0
20  
40 60  
80 100 120 140 160  
20 40  
60  
80 100 120 140 160  
0
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
ID(pulse)  
I
D(DC)  
100  
10  
1
T
C
= 25˚C  
Single Pulse  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
Rth(ch-A) = 41.7 ˚C/W  
10  
1
Rth(ch-C) = 0.83 ˚C/W  
0.1  
0.01  
Single Pulse  
µ
10  
1 m  
10 m  
100 m  
1
10  
100  
1000  
100  
µ
PW - Pulse Width - s  
3
Data Sheet D14134EJ2V0DS00  
2SK3357  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
500  
400  
300  
T
A
= 50˚C  
25˚C  
VGS =10 V  
10  
1
75˚C  
150˚C  
4.0 V  
200  
100  
V
DS = 10 V  
5
Pulsed  
0.1  
6
1
2
3
4
0
2.0  
4.0  
1.0  
3.0  
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
10  
100  
10  
1
V
DS = 10 V  
Pulsed  
Pulsed  
T
A
= 150˚C  
75˚C  
I = 38 A  
D
5
0
25˚C  
50˚C  
0.1  
0.01  
5
10  
15  
20  
0
0.01  
0.1  
1
10  
100  
VGS - Gate to Source Voltage - V  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE THRESHOLD VOLTAGE vs.  
CHANNEL TEMPERATURE  
3.0  
Pulsed  
V
DS = 10 V  
15  
10  
I
D
= 1 mA  
2.5  
2.0  
1.5  
1.0  
V
GS = 4.0 V  
5
0
10 V  
0.5  
0
1
10  
100  
1000  
50  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
I
D - Drain Current - A  
4
Data Sheet D14134EJ2V0DS00  
2SK3357  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
12  
1000  
100  
10  
Pulsed  
Pulsed  
10  
VGS = 10 V  
V
GS = 4.0 V  
10 V  
8
6
4
2
0
VGS = 0 V  
1
I
D
= 38 A  
0.1  
100  
150  
0
50  
0
50  
1.5  
1.0  
SD - Source to Drain Voltage - V  
0.5  
T
ch - Channel Temperature - ˚C  
V
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
100000  
10000  
V
GS = 0 V  
f = 1 MHz  
t
r
Ciss  
1000  
100  
10  
t
d(off)  
t
f
1000  
100  
Coss  
t
d(on)  
Crss  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
D
- Drain Current - A  
VDS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
100  
10  
1000  
100  
µ
di/dt = 100 A/ s  
GS = 0 V  
V
V
GS  
8
80  
V
DD = 48 V  
30 V  
12 V  
60  
6
4
40  
20  
10  
1
VDS  
2
ID = 75 A  
0
20 40  
Q
60 80 100 120 140 160  
0.1  
1.0  
10  
100  
G
- Gate Charge - nC  
I
F
- Drain Current - A  
5
Data Sheet D14134EJ2V0DS00  
2SK3357  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
160  
140  
120  
100  
80  
1000  
100  
V
R
V
I
DD = 30 V  
= 25  
GS = 20 V 0 V  
AS 75 A  
G
I
AS = 75A  
60  
10  
1
40  
V
DD = 30V  
= 25 Ω  
20  
R
G
V
GS = 20V0 V  
0
10µ  
100µ  
1m  
10m  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D14134EJ2V0DS00  
2SK3357  
PACKAGE DRAWING (Unit: mm)  
TO-3P (MP-88)  
EQUIVALENT CIRCUIT  
4.7 MAX.  
1.5  
15.7 MAX.  
4
3.2±0.2  
Drain  
Body  
Diode  
Gate  
1
2
3
Gate  
Protection  
Diode  
Source  
2.2±0.2  
5.45  
1.0±0.2 0.6±0.1  
2.8±0.1  
5.45  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
7
Data Sheet D14134EJ2V0DS00  
2SK3357  
The information in this document is current as of May, 2000. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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