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2SK3361

型号:

2SK3361

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

4 页

PDF大小:

43 K

PRELIMINARY DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3361  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
The 2SK3361 is N-Channel MOS Field Effect Transistor  
designed for high current switching application.  
PACKAGE  
2SK3361  
Isolated TO-220  
FEATURES  
Low on-state resistance  
DS(on)1  
GS  
D
R
R
= 20 mMAX. (V = 10 V, I = 20 A)  
(Isolated TO-220)  
DS(on)2  
GS  
D
= 28 mMAX. (V = 4.5 V, I = 20 A)  
iss  
iss  
Low C : C = 4900 pF TYP.  
Built-in gate protection diode  
Isolated TO-220 package  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
100  
±20  
V
V
GSS(AC)  
GSS(DC)  
D(DC)  
V
V
+20, –10  
±40  
V
I
A
Drain Current (pulse) Note1  
D(pulse)  
I
±160  
35  
A
C
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
2.0  
ch  
T
Channel Temperature  
150  
stg  
Storage Temperature  
T
–55 to +150  
40  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
160  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
3.57  
62.5  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2000 NS CP(K)  
Printed in Japan  
D14319EJ1V0DS00 (1st edition)  
The mark shows major revised points.  
1999  
©
2SK3361  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 20 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
14  
19  
2.0  
36  
20  
28  
mΩ  
mΩ  
V
VGS = 4.5 V, ID = 20 A  
VDS = 10 V, ID = 250 µA  
VDS = 10 V, ID = 20 A  
VDS = 100 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.5  
18  
2.5  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
4900  
990  
580  
44  
Output Capacitance  
Coss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Crss  
f = 1 MHz  
td(on)  
ID = 20 A  
Rise Time  
tr  
VGS(on) = 10 V  
230  
360  
250  
130  
14  
Turn-off Delay Time  
td(off)  
tf  
VDD = 50 V  
Fall Time  
RG = 10 Ω  
Total Gate Charge  
QG  
ID = 40 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
VDD = 80 V  
QGD  
VGS(on) = 10 V  
50  
VF(S-D)  
IF = 40 A, VGS = 0 V  
0.92  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
IF = 40 A, VGS = 0 V  
170  
870  
ns  
Qrr  
di/dt = 100 A/µs  
nC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90 %  
90 %  
PG.  
V
GS  
V
GS(on)  
10 %  
V
DD  
50 Ω  
Wave Form  
0
R
G
V
GS = 20 0 V  
PG.  
V
DD  
90 %  
I
D
BVDSS  
I
D
I
AS  
V
0
GS  
10 %  
10 %  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
d(on)  
t
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle 1 %  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
R
L
PG.  
VDD  
50 Ω  
2
Preliminary Data Sheet D14319EJ1V0DS00  
2SK3361  
PACKAGE DRAWING (Unit : mm)  
Isolated TO-220 (MP-45F)  
10.0  
±
0.3  
4.5 ± 0.2  
φ3.2  
± 0.2  
2.7  
± 0.2  
EQUIVALENT CIRCUIT  
Drain (D)  
Body  
Diode  
Gate (G)  
Gate  
Protection  
Diode  
0.7  
±
0.1  
1.3  
±
0.2  
2.5  
0.65 ± 0.1  
± 0.1  
Source (S)  
1.5  
±
0.2  
2.54  
2.54  
1.Gate  
2.Drain  
3.Source  
1
2 3  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
3
Preliminary Data Sheet D14319EJ1V0DS00  
2SK3361  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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