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2SK3365-Z

型号:

2SK3365-Z

描述:

切换N沟道功率MOS FET工业用[ SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

65 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3365  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3365 is N-Channel MOS Field Effect Transistor  
designed for DC/DC converters application of notebook  
computers.  
PART NUMBER  
2SK3365  
PACKAGE  
TO-251  
2SK3365-Z  
TO-252  
FEATURES  
Low on-resistance  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 14 m(MAX.) (V = 10 V, I = 15 A)  
GS  
D
= 21 m(MAX.) (V = 4.5 V, I = 15 A)  
GS  
D
= 29 m(MAX.) (V = 4.0 V, I = 15 A)  
iss  
iss  
Low C : C = 1300 pF (TYP.)  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
DSS  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
V
30  
±20  
±30  
±120  
36  
V
GSS  
V
V
A
D(DC)  
I
Drain Current (Pulse) Note  
D(pulse)  
I
A
C
T
P
Total Power Dissipation (T = 25 °C)  
W
W
°C  
A
T
P
Total Power Dissipation (T = 25 °C)  
1.0  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to + 150 °C  
Note PW 10 µs, Duty cycle 1 %  
THERMAL RESISTANCE  
Channel to case  
th(ch-C)  
R
R
3.48  
125  
°C/W  
°C/W  
th(ch-A)  
Channel to ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published September 1999 NS CP(K)  
Printed in Japan  
D14255EJ1V0DS00 (1st edition)  
1999  
©
2SK3365  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
RDS(on)3  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 15 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
11.5  
15.2  
18  
14  
21  
29  
2.5  
mΩ  
mΩ  
mΩ  
V
VGS = 4.5 V, ID = 15 A  
VGS = 4.0 V, ID = 15 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 15 A  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.5  
8.0  
2.0  
16.0  
S
VDS = 30 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, VGS = 0 V, f = 1 MHz  
10  
µA  
µA  
pF  
pF  
pF  
ns  
IGSS  
±10  
Ciss  
1300  
405  
190  
37  
Output Capacitance  
Coss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Crss  
td(on)  
tr  
td(off)  
tf  
ID = 15 A, VGS(on) = 10 V, VDD = 15 V,  
Rise Time  
RG = 10 Ω  
500  
75  
ns  
Turn-off Delay Time  
ns  
Fall Time  
95  
ns  
Total Gate Charge  
QG  
ID = 30 A, VDD = 24 V, VGS = 10 V  
25  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
4.5  
7.0  
1.0  
35  
QGD  
VF(S-D)  
trr  
IF = 30 A, VGS = 0 V  
IF = 30 A, VGS = 0 V  
di/dt = 100 A/µs  
ns  
Qrr  
32  
nC  
TEST CIRCUIT 2 GATE CHARGE  
TEST CIRCUIT 1 SWITCHING TIME  
D.U.T.  
I =2 mA  
D.U.T.  
G
V
GS  
R
L
R
L
90 %  
90 %  
V
GS  
Wave Form  
V
GS (on)  
10 %  
10 %  
RG  
0
50 Ω  
PG.  
PG.  
V
DD  
V
DD  
R = 10 Ω  
G
90 %  
I
D
I
D
V
0
GS  
10 %  
I
D
0
Wave Form  
t
d (on)  
t
r
t
d (off)  
t
f
τ
t
on  
t
off  
µ s  
τ = 1  
Duty Cycle 1 %  
2
Data Sheet D14255EJ1V0DS00  
2SK3365  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Case Temperature - ˚C  
0
20 40 60 80 100 120 140 160  
Case Temperature - ˚C  
T
C
-
T
C
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
120  
T
C
= 25˚C  
Pulsed  
V
GS =10 V  
I
D(PULSE) = 120A  
Single Pulse  
100  
100  
80  
60  
40  
20  
PW = 100  
I
D(DC) = 30A  
µ
s
4.5 V  
10 ms  
100 ms  
10  
1
4.0 V  
0
2
DS - Drain to Source Voltage - V  
4
1
3
1
10  
Drain to Source Voltage - V  
100  
V
V
DS -  
FORWARD TRANSFER CHARACTERISTICS  
1000  
100  
10  
T
A
= 150˚C  
75˚C  
1
0.1  
T
A
= 25˚C  
25˚C  
50˚C  
0.01  
Pulsed  
6 7  
0.001  
0
1
2
3
5
4
VGS - Gate to Source Voltage - V  
3
Data Sheet D14255EJ1V0DS00  
2SK3365  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
Rth(chA) = 125 ˚C/W  
100  
10  
1
Rth(chC) = 3.48 ˚C/W  
Single Pulse  
0.1  
100  
µ
1 m  
10 m  
100 m  
1
10  
1000  
100  
PW - Pulse Width - s  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
50  
100  
10  
1
V
DS = 10 V  
Pulsed  
Pulsed  
T
ch = 50˚C  
25˚C  
40  
25˚C  
30  
20  
10  
ID = 15 A  
T
ch = 75˚C  
150˚C  
0.1  
0.1  
0
5
10  
15  
1
10  
100  
VGS - Gate to Source Voltage - V  
ID- Drain Current - A  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
100  
80  
2.5  
2
Pulsed  
4.5 V  
V
DS = 10 V  
= 1 mA  
I
D
VGS = 4.0 V  
60  
40  
20  
0
1.5  
1
0.5  
0
10 V  
0.1  
1
I
10  
100  
1000  
50  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
D
- Drain Current - A  
4
Data Sheet D14255EJ1V0DS00  
2SK3365  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
Pulsed  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
30  
20  
100  
VGS = 4.0 V  
V
GS = 10 V  
4.5 V  
10 V  
0 V  
10  
1
10  
0
0.1  
I
D
= 15 A  
150  
0.01  
1.2  
- Source to Drain Voltage - V  
0.8  
1.6  
0.4  
0
0
50  
100  
50  
V
SD  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
100  
t
r
V
GS = 0 V  
f = 1 MHz  
1000  
t
f
t
t
d(on)  
100  
10  
1
d(off)  
Ciss  
Coss  
V
V
R
DD = 15 V  
GS = 10 V  
= 10 Ω  
Crss  
G
0.1  
1
0.1  
1
10  
100  
10  
100  
0.01  
I
D
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
40  
30  
20  
10  
di/dt = 100 A/µs  
GS = 0 V  
ID = 30 A  
V
14  
12  
10  
8
V
DD = 24 V  
15 V  
6 V  
6
10  
1
V
GS  
4
VDS  
2
0
0.1  
1
10  
100  
0
10  
20  
30  
40  
IF  
- Diode Current - A  
QG  
- Gate Charge - nC  
5
Data Sheet D14255EJ1V0DS00  
2SK3365  
PACKAGE DRAWINGS (Unit : mm)  
1) TO-251 (MP-3)  
2) TO-252 (MP-3Z)  
2.3±0.2  
0.5±0.1  
6.5±0.2  
6.5±0.2  
2.3±0.2  
5.0±0.2  
4
5.0±0.2  
0.5±0.1  
4
1
2
3
1
2
3
1.1±0.2  
0.9  
0.8  
1.1±0.2  
MAX. MAX.  
2.3 2.3  
+0.2  
0.5-0.1  
+0.2  
0.5-0.1  
0.8  
1. Gate  
2.3 2.3  
2. Drain  
3. Source  
4. Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
6
Data Sheet D14255EJ1V0DS00  
2SK3365  
[MEMO]  
7
Data Sheet D14255EJ1V0DS00  
2SK3365  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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