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2SK3391

型号：

2SK3391

描述：

硅N沟道MOS场效应管高频功率放大器[ Silicon N-Channel MOS FET UHF Power Amplifier ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

5 页

PDF大小：

63 K

下载PDF手册
2SK3391  
Silicon N-Channel MOS FET  
UHF Power Amplifier  
REJ03G0209-0200Z  
(Previous ADE-208-847 (Z))  
Rev.2.00  
Apr.14.2004  
Features  
•
High power output, High gain, High efficiency  
PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz)  
Compact package capable of surface mounting  
•
Outline  
UPAK  
1
D
2
3
3
1
G
1. Gate  
4
2. Source  
3. Drain  
4. Source  
2,4  
S
Note:  
Marking is “JX“.  
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
17  
±10  
V
0.3  
A
Note1  
Drain peak current  
Channel dissipation  
Channel temperature  
Storage temperature  
Notes: 1. PW < 1sec, Tch < 150°C  
2. Value at Tc = 25°C  
ID(pulse)  
Pch Note2  
Tch  
0.75  
A
5
W
°C  
°C  
150  
Tstg  
–45 to +150  
Rev.2.00, Apr.14.2004, page 1 of 4  
2SK3391  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
IDSS  
Min  
Typ  
Max  
Unit  
Test Conditions  
Zero gate voltage drain  
current  
—
—
10  
µA  
VDS = 13.7 V, VGS = 0  
Gate to source leak current  
IGSS  
—
—
—
±5  
3.1  
—
—
—
µA  
V
VGS = ±10 V, VDS = 0  
Gate to source cutoff voltage VGS(off)  
2.3  
—
ID = 1 mA, VDS = 13.7 V  
Input capacitance  
Output capacitance  
Output Power  
Ciss  
Coss  
Pout  
10  
3.5  
—
pF  
pF  
W
VGS = 5 V, VDS = 0, f = 1 MHz  
VDS = 13.7 V, VGS = 0, f = 1 MHz  
VDS = 13.7 V, IDO = 0.15 A  
—
1.6  
f = 836 MHz, Pin = 25.1 mW  
VDS = 13.7 V, IDO = 0.15 A  
Added Efficiency  
ηadd  
58  
—
—
%
f = 836 MHz, Pin = 25.1 mW  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
1.5  
8
6
4
2
10 V  
8 V  
7 V  
1
6 V  
5 V  
0.5  
VGS = 4 V  
Pulse Test  
0
0
50  
100  
150  
200  
2
4
6
8
10  
Drain to Source Voltage VDS  
(V)  
Case Temperature Tc (°C)  
Forward Transfer Admittance vs.  
Drain Current  
Typical Transfer Characteristics  
1
0.8  
0.6  
0.4  
0.2  
0.0  
Tc = 75°C  
25°C  
Tc = - 25°C  
0.3  
0.1  
- 25°C  
25°C  
0.03  
0.01  
75°C  
0.003  
0.001  
VDS = 13.7 V  
Pulse Test  
VDS = 13.7 V  
Pulse Test  
2
3
4
5
6
7
0.001 0.003 0.01 0.03  
0.1  
0.3  
1
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00, Apr.14.2004, page 2 of 4  
2SK3391  
Drain to Source Saturation Voltage vs.  
Drain Current  
Gate to Source Cutoff Voltage vs.  
Ambient Temperature  
1
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
0.3  
0.1  
75°C  
25°C  
0.03  
0.01  
Tc = - 25°C  
0.003  
0.001  
VGS = 10 V  
Pulse Test  
VDS = 13.7 V  
- 25  
0.01 0.03 0.1 0.3  
1
3
10  
0
25  
50  
75  
100 125  
Drain Current ID (A)  
Ambient Temperature Ta (°C)  
Input Capacitance vs.  
Gate to Source Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
10.5  
10  
100  
VGS = 0  
f = 1 MHz  
30  
10  
9.5  
9
3
1
VDS = 0  
f = 1 MHz  
8.5  
-10  
0.1  
0.3  
1
3
10  
30  
- 6  
6
10  
- 2  
2
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Reverse Transfer Capacitance vs.  
Drain to Gate Voltage  
Output Power, Added Efficiency vs.  
Input Power  
2.5  
2
100  
80  
60  
40  
20  
0
10  
3
VGS = 0  
Pout  
f = 1 MHz  
ηadd  
1.5  
1
1
0.3  
VDS = 13.7 V  
0.5  
0
I
DO = 0.15 A  
f = 836 MHz  
0.1  
0.1  
0.3  
1
3
10  
30  
0
50  
100  
150  
200  
250  
Input power Pin (mW)  
Drain to Gate Voltage VDG (V)  
Rev.2.00, Apr.14.2004, page 3 of 4  
2SK3391  
Package Dimensions  
As of January, 2003  
Unit: mm  
4.5 ꢀ.ꢁ  
ꢁ.8 Max  
ꢁ.5 ꢀ.ꢁ  
ꢀ.44 Max  
(ꢁ.5)  
φ
ꢁ
ꢀ.53 Max  
ꢀ.48 Max  
ꢀ.44 Max  
ꢁ.5  
ꢁ.5  
3.ꢀ  
Package Code  
JEDEC  
UPAK  
—
JEITA  
Mass (reference value)  
Conforms  
ꢀ.ꢀ5ꢀ g  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK3391JX  
1000  
Taping  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00, Apr.14.2004, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited.  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom  
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900  
Renesas Technology Europe GmbH  
Dornacher Str. 3, D-85622 Feldkirchen, Germany  
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11  
Renesas Technology Hong Kong Ltd.  
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2375-6836  
Renesas Technology Taiwan Co., Ltd.  
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .1.0  
厂商 型号 描述 页数 下载

PANASONIC

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

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PANASONIC

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PANASONIC

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