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2SK3402-Z

型号：

2SK3402-Z

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

132 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3402  
SWITCHING  
N-CHANNEL POWER MOS FET  
★
ORDERING INFORMATION  
PART NUMBER  
DESCRIPTION  
The 2SK3402 is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
2SK3402  
TO-251 (MP-3)  
TO-252 (MP-3Z)  
2SK3402-Z  
FEATURES  
• Low On-State Resistance  
RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A)  
RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A)  
• Low Ciss : Ciss = 3200 pF TYP.  
• Built-in Gate Protection Diode  
• TO-251/TO-252 package  
(TO-251)  
(TO-252)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
V
±20  
±36  
V
A
±144  
40  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
35  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
123  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No.  
D14473EJ3V1DS00 (3rd edition)  
The mark ★ shows major revised points.  
Date Published October 2004 NS CP(K)  
Printed in Japan  
1999, 2000  
2SK3402  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN. TYP. MAX. UNIT  
IDSS  
VDS = 60 V, VGS = 0 V  
10  
±10  
2.5  
µA  
µA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 18 A  
VGS = 10 V, ID = 18 A  
VGS = 4.0 V, ID = 18 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
13  
2.0  
27  
Note  
Forward Transfer Admittance  
S
Note  
Drain to Source On-state Resistance  
12  
15  
22  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
15  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
3200  
520  
270  
36  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
VDD = 30 V, ID = 18 A  
VGS = 10 V  
310  
170  
180  
61  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
RG = 10 Ω  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
VDD = 48 V  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
8.2  
17  
ID = 36 A  
Note  
Body Diode Forward Voltage  
IF = 36 A, VGS = 0 V  
IF = 36 A, VGS = 0 V  
di/dt = 100 A/µs  
1.0  
48  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
nC  
Qrr  
89  
Note Pulsed  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
50 Ω  
V
GS  
R
L
90%  
90%  
PG.  
GS = 20 → 0 V  
V
GS  
V
GS  
10%  
V
DD  
Wave Form  
0
RG  
V
PG.  
V
DD  
90%  
I
D
BVDSS  
I
D
I
AS  
V
0
GS  
10%  
10%  
I
D
0
V
DS  
Wave Form  
I
D
t
d(on)  
t
r
t
d(off)  
t
f
V
DD  
τ
t
on  
t
off  
τ = 1 s  
µ
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
RL  
PG.  
V
DD  
50 Ω  
2
Data Sheet D14473EJ3V1DS  
2SK3402  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
0
20  
40 60  
80 100 120 140 160  
20 40  
60  
80 100 120 140 160  
0
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
PW = 10  
I
D(pulse)  
µ
s
Limited  
100  
= 10 V)  
GS  
RDS(on)  
µ
I
D(DC)  
1 ms  
s
10 ms  
(at V  
P
o
DC  
w
er Dissipation  
Limited  
1
T
C
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
Rth(ch-A) = 125˚C/W  
100  
10  
Rth(ch-C) = 3.13˚C/W  
1
0.1  
0.01  
Single Pulse  
100 1000  
µ
10  
1 m  
10 m  
100 m  
1
10  
100  
µ
PW - Pulse Width - s  
3
Data Sheet D14473EJ3V1DS  
2SK3402  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
DRAIN TO SOURCE VOLTAGE  
200  
160  
100  
10  
Pulsed  
T
A
= −55˚C  
25˚C  
120  
80  
75˚C  
V
GS = 10 V  
1
0.1  
150˚C  
4.0 V  
40  
0
V
DS = 10 V  
5
0.01  
0
1
2
3
4
6
1
2
3
4
VDS - Drain to Source Voltage - V  
V
GS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
50  
100  
10  
V
DS = 10 V  
Pulsed  
40  
30  
T
A
= 150˚C  
75˚C  
25˚C  
1
0.1  
−55˚C  
20  
10  
0
I
D
= 18 A  
0.01  
0.01  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
I
1
10  
100  
VGS - Gate to Source Voltage - V  
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE THRESHOLD VOLTAGE vs.  
CHANNEL TEMPERATURE  
3.0  
40  
35  
V
DS = 10 V  
= 1 mA  
Pulsed  
I
D
2.5  
30  
2.0  
1.5  
1.0  
25  
20  
15  
10  
5
V
GS = 4.0 V  
10 V  
100  
0.5  
0
0
1
10  
1000  
−50  
0
50  
100  
150  
ID - Drain Current - A  
T
ch - Channel Temperature - ˚C  
4
Data Sheet D14473EJ3V1DS  
2SK3402  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
1000  
100  
10  
30  
Pulsed  
Pulsed  
25  
20  
V
GS = 4.0 V  
10 V  
V
GS = 10 V  
15  
10  
V
GS = 0 V  
1
5
0
I
D
= 18 A  
150  
ch - Channel Temperature - ˚C  
0.1  
0
0.5  
1.0  
1.5  
−50  
0
50  
100  
V
F(S-D) - Body Diode Forward Voltage - V  
T
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
1000  
V
GS = 0 V  
t
r
f = 1 MHz  
t
f
Ciss  
t
d(off)  
100  
10  
1
t
d(on)  
C
oss  
rss  
C
100  
10  
0.1  
1
10  
100  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
16  
80  
70  
µ
di/dt = 100 A/ s  
GS = 0 V  
V
14  
12  
10  
V
DD = 48 V  
30 V  
60  
50  
V
GS  
12 V  
8
6
4
2
40  
30  
V
DS  
10  
1
20  
10  
0
I
D
= 36 A  
0.1  
1
10  
100  
0
10 20 30  
40  
50 60  
70 80  
I
F
- Drain Current - A  
Q
G
- Gate Charge - nC  
5
Data Sheet D14473EJ3V1DS  
2SK3402  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
100  
10  
160  
140  
120  
100  
80  
V
R
V
I
DD = 30 V  
= 25 Ω  
GS = 20 → 0 V  
AS ≤ 35 A  
G
I
AS = 35A  
EAS  
=
123  
mJ  
60  
1
40  
V
DD = 30V  
= 25 Ω  
GS = 20→0 V  
20  
R
G
V
0.1  
0
10  
µ
100  
µ
1m  
10m  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D14473EJ3V1DS  
2SK3402  
PACKAGE DRAWINGS (Unit: mm)  
1) TO-251 (MP-3)  
2) TO-252 (MP-3Z)  
2.3±0.2  
0.5±0.1  
6.5±0.2  
6.5±0.2  
2.3±0.2  
5.0±0.2  
4
5.0±0.2  
0.5±0.1  
4
1
2
3
1
2
3
1.1±0.2  
0.9  
0.8  
1.1±0.2  
MAX. MAX.  
2.3 2.3  
+0.2  
0.5-0.1  
+0.2  
0.5-0.1  
0.8  
1. Gate  
2.3 2.3  
2. Drain  
3. Source  
4. Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this  
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage  
may be applied to this device.  
7
Data Sheet D14473EJ3V1DS  
2SK3402  
•
The information in this document is current as of October, 2004. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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