请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3403

型号：

2SK3403

描述：

东芝场效应晶体管硅N沟道MOS型[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

234 K

下载PDF手册
                                                        
                                                        
2SK3403  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3403  
Switching Regulator Applications  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 0.29 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 5.8 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 450 V)  
DSS  
DSS  
= 10 V, I = 1 mA)  
Enhancement-mode: V = 3.0~5.0 V (V  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
450  
450  
±30  
13  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
52  
DP  
Drain power dissipation (Tc = 25°C)  
P
100  
W
D
AS  
AR  
Single pulse avalanche energy  
E
350  
mJ  
(Note 2)  
JEDEC  
JEITA  
―
―
Avalanche current  
I
13  
10  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
2-10S1B  
T
150  
ch  
Weight: 1.5 g (typ.)  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
1.25  
83.3  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Please use device on condition that the channel temperature is  
below 150°C.  
Note 2: V  
DD  
= 90 V, T = 25°C (initial), L = 3.46 mH, R = 25 W,  
ch  
G
I
= 13 A  
AR  
Note 3: Repetitive rating; pulse width limited by maximum channel  
temperature.  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-10S2B  
Weight: 1.5 g (typ.)  
1
2002-09-02  
                                                                     
                                                                     
                                                                                                  
                                                                                                  
2SK3403  
Electrical Characteristics (Tc = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
¾
±30  
¾
¾
¾
¾
±10  
¾
mA  
V
GSS  
GS  
DS  
Gate-source breakdown voltage  
Drain cut-off current  
V
V
I = 10 mA, V = 0 V  
G DS  
(BR) GSS  
I
V
= 450 V, V = 0 V  
GS  
100  
mA  
DSS  
DS  
450  
550  
3.0  
¾
Drain-source breakdown voltage  
I
= 10 mA, V  
= 0 V  
GS  
¾
¾
V
(BR) DSS  
D
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
V
V
V
= 10 V, I = 1 mA  
¾
0.29  
5.8  
5.0  
0.4  
¾
V
W
S
th  
DS  
GS  
DS  
D
R
= 10 V, I = 6 A  
D
DS (ON)  
ïY ï  
fs  
= 10 V, I = 6 A  
3.0  
¾
D
C
C
1600  
17  
¾
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
220  
¾
Rise time  
t
¾
¾
¾
¾
28  
45  
10  
56  
¾
¾
¾
¾
r
10 V  
I
= 6 A  
D
V
GS  
Output  
0 V  
Turn-on time  
Switching time  
t
on  
R
=
L
33.3 W  
Fall time  
t
f
~
-
V
200 V  
DD  
<
Duty 1%, t = 10 ms  
=
w
Turn-off time  
t
off  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
¾
¾
¾
34  
19  
15  
¾
¾
¾
g
~
-
V
360 V, V  
= 10 V, I = 13 A  
nC  
Q
gs  
gd  
DD  
GS  
D
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
13  
52  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 13 A, V  
= 13 A, V  
= 0 V  
¾
-1.7  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
300  
3.4  
ns  
mC  
rr  
dI /dt = 100 A/ms  
Q
¾
DR  
rr  
Marking  
※ Lot Number  
Type  
K3403  
Month (starting from alphabet A)  
※
Year  
(last number of the christian era)  
2
2002-09-02  
2SK3403  
I
– V  
I
– V  
D
DS  
D
DS  
8
10  
8
20  
16  
Common source  
Tc = 25°C  
Common source  
15  
10  
8.5  
7.5  
Tc = 25°C  
10  
8.25  
Pulse test  
Pulse test  
7.25  
15  
7.0  
6
12  
8
7.5  
4
6.5  
7
6.5  
V
GS  
= 6.0 V  
4
2
V
GS  
= 6 V  
0
0
0
2
4
6
8
10  
0
10  
20  
30  
40  
50  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
V
– V  
DS GS  
D
GS  
30  
20  
10  
0
10  
8
Common source  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
= 20 V  
Pulse test  
6
25  
I
= 13 A  
D
4
Tc = -55°C  
100  
6
3
2
0
3
6
9
12  
0
4
8
12  
16  
(V)  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
GS  
GS  
ïY ï – I  
R
– I  
fs  
D
DS (ON)  
50  
10  
10  
Common source  
Tc = 25°C  
Pulse test  
Common source  
V
= 20 V  
DS  
Pulse test  
Tc = -55°C  
25  
100  
1
1
V
GS  
= 10 V  
15  
0.1  
0.1  
0.1  
1
10  
(A)  
100  
0.1  
1
10  
(A)  
100  
Drain current  
I
D
Drain current  
I
D
3
2002-09-02  
2SK3403  
R
– Tc  
I
– V  
DS  
DS (ON)  
DR  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
1
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
GS  
6
Pulse test  
Pulse test  
I
= 13 A  
D
3
10  
3
1
V
GS  
= 0, -1 V  
5
0.1  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
(V)  
-1.2  
-80  
-40  
0
40  
80  
120  
160  
Case temperature Tc  
(°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
– Tc  
th  
DS  
10000  
1000  
100  
10  
6
5
4
3
2
1
Common source  
= 10 V  
V
D
DS  
I
= 1 mA  
Pulse test  
C
iss  
C
oss  
Common  
source  
= 0 V  
C
rss  
V
GS  
f = 1 MHz  
0
-80  
-40  
0
40  
80  
120  
160  
Tc = 25°C  
1
Case temperature Tc  
(°C)  
0.1  
1
10  
100  
(V)  
1000  
Drain-source voltage  
V
DS  
P
– Tc  
Dynamic input/output characteristics  
D
200  
160  
500  
20  
16  
12  
8
Common source  
I
= 13 A  
D
Tc = 25°C  
Pulse test  
400  
300  
200  
100  
0
V
DS  
V
DD  
= 90 V  
120  
80  
180  
360  
V
GS  
4
40  
0
0
0
40  
80  
120  
160  
(°C)  
200  
0
10  
20  
30  
40  
(nC)  
50  
Case temperature Tc  
Total gate charge  
Q
g
4
2002-09-02  
2SK3403  
r
th  
– t  
w
3
1
Duty = 0.5  
0.5  
0.3  
0.2  
0.1  
P
DM  
0.1  
0.05  
t
0.05  
0.03  
0.02  
0.01  
T
Single pulse  
Duty = t/T  
th (ch-c)  
R
= 1.25°C/W  
0.01  
10 m  
100 m  
1 m  
10 m  
Pulse width  
100 m  
1
10  
t
w
(S)  
Safe operating area  
E
– T  
AS ch  
400  
100  
I
max (pulse) *  
D
50  
30  
300  
200  
100  
0
I
max  
D
(continuous)  
100 ms *  
10  
1 ms *  
5
3
DC operation  
Tc = 25°C  
1
0.5  
0.3  
25  
50  
75  
100  
125  
150  
Channel temperature (initial) Tch (°C)  
* Single nonrepetitive pulse  
Tc = 25°C  
0.1  
Curves must be derated linearly  
with increase in temperature.  
0.05  
0.03  
V
max  
300  
DSS  
B
VDSS  
15 V  
3
10  
30  
100  
V
1000  
I
AR  
-15 V  
Drain-source voltage  
(V)  
DS  
V
V
DS  
DD  
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
B
VDSS  
VDSS  
R
V
= 25 W  
DD  
G
=
×L×I  
×
Ε
AS  
ç
2
-
= 90 V, L = 3.46 mH  
B
V
DD  
è
5
2002-09-02  
2SK3403  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2002-09-02  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.208928s