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2SK3417

型号：

2SK3417

描述：

开关稳压器的应用[ Switching Regulator Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

7 页

PDF大小：

253 K

下载PDF手册
                                                        
                                                        
2SK3417  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3417  
Switching Regulator Applications  
Unit: mm  
·
·
·
·
·
·
Reverse-recovery time: t = 60 ns (typ.)  
rr  
Built-in high-speed flywheel diode  
Low drain-source ON resistance: R  
= 1.6 Ω (typ.)  
DS (ON)  
High forward transfer admittance: ïY ï = 4.0 S (typ.)  
fs  
Low leakage current: I  
= 100 µA (max) (V = 500 V)  
DSS  
Enhancement-model: V = 2.0~4.0 V (V  
DS  
= 10 V, I = 1 mA)  
D
th  
DS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
500  
500  
±30  
5
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
20  
DP  
Drain power dissipation (Tc = 25°C)  
P
50  
W
D
AR  
AR  
JEDEC  
JEITA  
―
―
Single pulse avalanche energy  
E
180  
mJ  
(Note 2)  
Avalanche current  
I
5
5
A
TOSHIBA  
2-10S1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 1.5 g (typ.)  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
2.5  
°C/W  
°C/W  
th (ch-c)  
83.3  
th (ch-a)  
Note 1: Please use devise on condition that the channel temperature is  
below 150°C.  
Note 2: V  
DD  
= 90 V, T = 25°C (initial), L = 12.2 mH, R = 25 W,  
ch  
G
I
= 5 A  
AR  
Note 3: Repetitive rating: Pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-10S1B  
Weight: 1.5 g (typ.)  
1
2002-08-12  
                                                                    
                                                                     
                                                                                                  
                                                                                                  
2SK3417  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
¾
±30  
¾
¾
¾
±10  
¾
mA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-OFF current  
V
V
I = ±100 mA, V = 0 V  
G DS  
(BR) GSS  
I
V
= 500 V, V = 0 V  
GS  
¾
100  
¾
mA  
V
DSS  
DS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 10 mA, V  
= 0 V  
GS  
500  
2.0  
¾
¾
(BR) DSS  
D
V
V
V
V
= 10 V, I = 1 mA  
¾
4.0  
1.8  
¾
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 2.5 A  
1.6  
4.0  
780  
60  
W
S
DS (ON)  
D
ïY ï  
fs  
= 10 V, I = 2.5 A  
2.5  
¾
D
C
C
¾
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
200  
¾
Rise time  
t
¾
¾
¾
12  
25  
15  
¾
¾
¾
r
10 V  
I
= 2.5 A  
V
L
D
OUT  
V
GS  
0 V  
Turn-ON time  
Switching time  
t
on  
R
= 90 W  
~
225 V  
-
DD  
V
Fall time  
t
f
<
Duty 1%, t = 10 ms  
=
w
Turn-OFF time  
t
¾
¾
60  
17  
¾
off  
Total gate charge  
Q
¾
g
(gate-source plus gate-drain)  
~
-
V
400 V, V  
= 10 V, I = 5 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
Q
¾
¾
11  
6
¾
¾
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
5
20  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 5 A, V  
= 5 A, V  
= 0 V  
¾
-1.7  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
60  
0.1  
ns  
mC  
rr  
dI /dt = 100 A/ms  
Q
¾
DR  
rr  
Marking  
※ Lot Number  
K3417  
Type  
Month (starting from alphabet A)  
※
Year  
(last number of the christian era)  
2
2002-08-12  
2SK3417  
I
- V  
I
- V  
DS  
D
DS  
D
5
4
3
2
1
0
10  
8
15  
15  
6.25  
10  
7
Common source  
Tc = 25°C  
Common source  
Tc = 25°C  
6.5  
Pulse test  
10  
Pulse test  
6
6.5  
6
5.75  
5.5  
6
4
5.25  
5.5  
= 5 V  
2
V
= 5 V  
GS  
V
GS  
0
0
4
8
12  
16  
(V)  
20  
0
10  
20  
30  
40  
(V)  
50  
Drain-source voltage  
V
Drain-source voltage  
V
DS  
DS  
I
- V  
V
- V  
DS GS  
D
GS  
10  
8
20  
16  
12  
8
Common source  
Tc = 25°C  
Pulse test  
Common source  
V
= 20 V  
DS  
Pulse test  
6
100  
I
= 5 A  
D
4
2.5  
1.2  
2
4
Tc = 25°C  
0
0
0
2
4
6
8
10  
0
4
8
12  
16  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
D
(V)  
GS  
GS  
ïY ï - I  
fs  
R
- I  
D
DS (ON)  
10  
10  
Common source  
= 20 V  
Common source  
Tc = 20 °C  
V
DS  
Pulse test  
Pulse test  
5
3
Tc = 25°C  
V
= 10 V  
GS  
100  
15  
1
1
0.5  
0.3  
0.1  
0.1  
0.1  
1
10  
0.1  
1
Drain current  
10  
Drain current  
I
D
(A)  
I
D
(A)  
3
2002-08-12  
2SK3417  
R
- Tc  
I
- V  
DR DS  
DS (ON)  
10  
8
10  
Common source  
Tc = 25°C  
Pulse test  
Common source  
= 10 V  
V
GS  
Pulse test  
6
1
I
= 5 A  
D
4
2.5  
1.2  
10  
5
2
3
V
GS  
= 0, 1 V  
0
0.1  
0
40  
80  
120  
160  
0
-0.4  
-0.8  
-1.2  
(V)  
-1.6  
Channel temperature Tc (°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
- Tc  
th  
DS  
2000  
1000  
5
4
3
2
1
0
Common source  
= 10 V  
V
DS  
= 1 mA  
C
iss  
I
D
Pulse test  
500  
300  
100  
C
oss  
50  
30  
Common source  
V
= 0 V  
GS  
C
rss  
10  
5
0
40  
80  
120  
160  
f = 1 MHz  
Tc = 25°C  
Channel temperature Tc (°C)  
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
(V)  
Drain-source voltage  
V
DS  
P
- Tc  
Dynamic input/output characteristics  
D
50  
40  
30  
20  
10  
10  
500  
400  
300  
200  
100  
0
20  
Common source  
I
= 5 A  
D
Tc = 25°C  
Pulse test  
16  
12  
8
V
DS  
V
DD  
= 100 V  
200  
400  
V
GS  
4
0
0
40  
80  
120  
160  
200  
0
5
10  
15  
20  
25  
Case temperature Tc (°C)  
Total gate charge  
Q
g
(nC)  
4
2002-08-12  
2SK3417  
r
th  
- t  
w
10  
1
Duty = 0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
0.01  
P
DM  
0.01  
0.001  
t
Single pulse  
T
Duty = t/T  
th (ch-c)  
R
= 3.57°C/W  
10 m  
100 m  
1 m  
10 m  
Pulse width  
100 m  
1
10  
t
w
(S)  
200  
Safe operating area  
E
– T  
AS  
ch  
100  
30  
10  
160  
120  
80  
I
max (pulsed) *  
D
100 ms *  
I
max (continuous) *  
D
3
1
1 ms *  
DC operation  
Tc = 25°C  
40  
0.3  
0.1  
0
25  
50  
75  
100  
125  
150  
Channel temperature (initial) Tch (°C)  
*
Single nonrepetitive pulse  
Tc = 25°C  
0.03  
0.01  
Curves must be derated linearly  
with increase in temperature.  
V
max  
DSS  
B
VDSS  
1
10  
100  
1000  
15 V  
I
Drain-source voltage  
V
(V)  
AR  
DS  
-15 V  
V
V
DS  
DD  
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
B
VDSS  
VDSS  
R
DD  
= 25 W  
G
=
×L×I  
×
Ε
AS  
ç
2
-
V
= 90 V, L = 12.2 mH  
B
V
DD  
è
5
2002-08-12  
2SK3417  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2002-08-12  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  
厂商 型号 描述 页数 下载

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ETC

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ETC

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ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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