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2SK3427

型号:

2SK3427

描述:

硅N沟道结[ Silicon N-Channel Junction ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

62 K

Silicon Junction FETs (Small Signal)  
2SK3427  
Silicon N-Channel Junction  
Unit: mm  
0.40 +00..0150  
0.12 +00..0012  
For impedance conversion in low frequency  
For electret capacitor microphone  
3
I Features  
High mutual conductance gm  
Low noise voltage of NV  
1
2
(0.95) (0.95)  
(0.5)  
I Absolute Maximum Ratings Ta = 25°C  
1.9 0.1  
2.9 0.2  
Parameter  
Drain-source voltage  
Drain-gate voltage  
Symbol  
VDSO  
VDGO  
IDSO  
IDGO  
IGSO  
PD  
Rating  
Unit  
V
10˚  
20  
1: Drain  
2: Source  
3: Gate  
20  
V
Drain-source current  
Drain-gate current  
2
mA  
mA  
mA  
mW  
°C  
MiniT3-F1 Package  
2
2
Gate-source current  
Marking Symbol: 5E  
Allowable power dissipation  
Operating ambient temperature  
Storage temperature  
200  
Topr  
20 to +80  
55 to +150  
Tstg  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Drain current  
Symbol  
ID  
Conditions  
Min  
100  
107  
660  
Typ  
Max  
460  
470  
Unit  
VDS = 2.0 V, RD = 2.2 k1%  
VDS = 2.0 V, RD = 2.2 k1%, VGS = 0  
VD = 2.0 V, VGS = 0, f = 1 kHz  
µA  
IDSS  
gm  
Mutual conductance  
Noise voltage  
1600  
µS  
NV  
VD = 2.0 V, RD = 2.2 k1%  
CO = 5 pF, A-Curve  
10  
µV  
Voltage gain  
GV1  
GV2  
VD = 2.0 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
7.5  
4.0  
8.0  
4.7  
1.5  
5.0  
0
dB  
VD = 12 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
GV3  
VD = 1.5 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
∆GV. f*  
VD = 2.0 V, RD = 2.2 k1%  
1.7  
CO = 5 pF, eG = 10 mV, f =1 kHz to 70 Hz  
Voltage gain difference  
GV2 GV1  
GV1 GV3  
0
0
4.0  
1.7  
dB  
Note) : ∆G . fis assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)  
*
V
Publication date: April 2002  
SJF00034AED  
1
2SK3427  
PD Ta  
ID VDS  
ID VGS  
250  
200  
150  
100  
50  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VGS = 0.4 V  
Ta = 25°C  
VDS = 2 V  
0.3 V  
Ta = 75°C  
0.2 V  
0.1 V  
25°C  
25°C  
0 V  
0.1 V  
0
0
20 40 60 80 100 120 140 160  
0.5 0.4 0.3 0.2 0.1  
0
0
2
4
6
8
10  
(
)
V
Gate-source voltage VGS  
(
)
Ambient temperature Ta °C  
( )  
V
Drain-source voltage VDS  
Yfs  VGS  
Yfs  ID  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.6  
VDS = 2 V  
Ta = 25°C  
VDS = 2 V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
– 1.0 – 0.8 – 0.6 – 0.4 – 0.2  
0
0
20 40 60 80 100 120 140 150 160 200  
(
)
(µ )  
Drain current ID A  
Gate-source voltage VGS  
V
SJF00034AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this book  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this book and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this book is limited to showing representative characteristics  
and applied circuits examples of the products. It neither warrants non-infringement of intellectual  
property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this book.  
(4) The products described in this book are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this book are subject to change without no-  
tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the  
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum  
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,  
we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets  
are individually exchanged.  
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 MAY  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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