请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3440

型号：

2SK3440

描述：

开关稳压器， DC- DC转换器应用电机驱动应用[ Switching Regulator, DC-DC Converter Applications Motor Drive Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

322 K

下载PDF手册
2SK3440  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
2SK3440  
Switching Regulator, DC-DC Converter Applications  
Motor Drive Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 6.5 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 30 S (typ.)  
fs  
= 100 µA (V  
Low leakage current: I  
= 60 V)  
DS  
DSS  
Enhancement-mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
60  
60  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
GS  
DGR  
Gate-source voltage  
V
±30  
GSS  
DC  
(Note 1)  
I
50  
D
Drain current  
A
Pulse (Note 1)  
I
200  
DP  
Drain power dissipation  
P
125  
W
mJ  
A
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy (Note 2)  
Avalanche current  
E
644  
SC-97  
2-9F1B  
I
50  
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
12.5  
150  
mJ  
°C  
°C  
AR  
T
ch  
Weight: 0.74 g (typ.)  
Storage temperature range  
T
−55 to 150  
stg  
Thermal Characteristics  
Notice:  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into S2 pin.  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Please use devices on condition that the channel temperature  
is below 150°C.  
4
Note 2: V  
DD  
= 50 V, T = 25°C (initial), L = 350 µH, R = 25 Ω, I = 50 A  
ch AR  
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2
3
1
2002-03-04  
2SK3440  
Electrical Characteristics (Note 4) (Tc = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
I
V
V
V
±10  
100  
µA  
µA  
V
V
mΩ  
S
pF  
pF  
pF  
GSS  
GS  
DS  
DS  
Drain cut-off current  
= 60 V, V  
= 10 mA, V  
D
= 0 V  
= 0 V  
DSS  
GS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
60  
2.0  
(BR) DSS  
V
= 10 V, I = 1 mA  
4.0  
8
th  
DS  
GS  
DS  
D
R
= 10 V, I = 25 A  
6.5  
30  
3700  
280  
1320  
DS (ON)  
D
|Y |  
= 10 V, I = 25 A  
15  
fs  
D
C
C
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
I
= 25 A  
D
10 V  
0 V  
Rise time  
t
12  
30  
12  
50  
55  
r
V
GS  
V
OUT  
Turn-on time  
Switching time  
t
on  
ns  
Fall time  
t
f
V
30 V  
−
DD  
V
:
IN  
Turn-off time  
t
off  
<
Duty 1%, t = 10 µs  
=
w
Total gate charge  
Q
nC  
g
(gate-source plus gate-drain)  
V
48 V, V  
= 10 V, I = 50 A  
GS D  
−
DD  
Gate-source charge  
Q
Q
35  
20  
nC  
nC  
gs  
Gate-drain (“miller”) charge  
gd  
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.  
(However, while switching times are measured, please don’t connect and ground it.)  
Source-Drain Ratings and Characteristics (Note 5) (Tc = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
50  
Unit  
A
Continuous drain reverse current  
I
1
DR  
(Note 1, Note 5)  
Pulse drain reverse current  
I
1
200  
1
A
DRP  
(Note 1, Note 5)  
Continuous drain reverse current  
I
2
A
DR  
(Note 1, Note 5)  
Pulse drain reverse current  
I
2
4
A
DRP  
(Note 1, Note 5)  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 50 A, V  
= 50 A, V  
= 0 V  
= 0 V,  
−1.5  
V
ns  
nC  
DS2F  
DR  
DR  
GS  
GS  
t
70  
123  
rr  
dI /dt = 100 A/µs  
Q
rr  
DR  
Note 1: Please use devices on condition that the channel temperatureis below 150°C.  
Note 5: drain, flowing current value between the S2 pin, open the S1 pin  
drain, flowing current value between the S1 pin, open the S2 pin  
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.  
Marking  
※ Lot Number  
Type  
K3440  
Month (starting from alphabet A)  
Year (last number of the christian era)  
※
2
2002-03-04  
2SK3440  
I
– V  
I – V  
D DS  
D
DS  
10  
100  
80  
200  
160  
Common source  
Common source  
Tc = 25°C  
Pulse test  
15  
8.5  
15  
10  
8
Tc = 25°C, Pulse test  
8.5  
7.5  
8
60  
40  
20  
120  
80  
7
7.5  
7
6.5  
6.5  
6
40  
6
V
= 5.5 V  
GS  
V
= 5.5 V  
GS  
0
0
0
0.2  
0.4  
0.6  
0.8  
(V)  
1.0  
0
1
2
3
4
5
Drain-source voltage  
V
Drain-source voltage  
V
(V)  
DS  
DS  
V
– V  
I
– V  
GS  
DS  
GS  
D
100  
80  
60  
40  
20  
0
1.2  
1
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
0.8  
0.6  
0.4  
0.2  
0
I
= 50 A  
D
100  
Tc = −55°C  
25  
12  
25  
0
2
4
6
8
10  
0
4
8
12  
16  
20  
(V)  
24  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
GS  
GS  
Y
– I  
R
– I  
fs  
D
DS (ON)  
D
100  
100  
10  
1
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
Tc = −55°C  
V
DS  
Pulse test  
25°C  
100°C  
10  
V
GS  
= 10 V  
15  
1
10  
Drain current  
100  
1
10  
Drain current  
100  
I
(A)  
I
D
(A)  
D
3
2002-03-04  
2SK3440  
R
– Tc  
I
– V  
DR DS  
DS (ON)  
14  
12  
10  
8
1000  
100  
10  
Common source  
Tc = 25°C  
Pulse test  
Common source  
= 10 V  
Pulse test  
V
GS  
I
= 50 A  
D
25  
12  
6
4
1
2
3
1
10  
V
GS  
= 0 V  
0
0.1  
−80  
−40  
0
40  
80  
120  
160  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1  
−1.2  
−1.4  
Case temperature Tc (°C)  
Drain-source voltage  
V
(V)  
DS  
Capacitance – V  
V
– Tc  
th  
DS  
10000  
1000  
100  
6
5
4
3
2
Common source  
= 10 V  
V
D
DS  
= 1 mA  
I
C
Pulse test  
iss  
C
C
oss  
rss  
Common source  
= 0 V  
1
V
GS  
f = 1 MHz  
Tc = 25°C  
0
−80  
−40  
0
40  
80  
120  
160  
10  
Case temperature Tc (°C)  
0.1  
1
10  
100  
Drain-source voltage  
V
(V)  
DS  
P
– Tc  
Dynamic input/output characteristics  
D
200  
160  
100  
20  
Common source  
= 50 A  
Tc = 25°C  
I
D
80  
60  
40  
20  
0
16  
12  
8
Pulse test  
V
DS  
= 12 V  
120  
80  
V
DS  
48  
24  
V
GS  
40  
4
10  
0
0
40  
80  
120  
160  
0
20  
40  
100  
120  
200  
60  
80  
Case temperature Tc (°C)  
Total gate charge  
Q
g
(nC)  
4
2002-03-04  
2SK3440  
r
th  
– t  
w
10  
1
Duty = 0.5  
0.2  
P
DM  
0.1  
0.05  
0.02  
0.1  
0.01  
t
T
Duty = t/T  
th (ch-c)  
0.01  
R
= 1.0°C/W  
単発  
0.00001  
0.0001  
0.001  
0.01  
Pulse width  
0.1  
1
10  
t
(s)  
w
Safe operating area  
E
– T  
AS ch  
500  
300  
1000  
I
max (pulsed) *  
D
800  
600  
400  
200  
100  
100 µs *  
I
max (continuous)  
D
50  
30  
1 ms *  
10  
DC operation  
5
3
0
*: Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature  
25  
50  
75  
100  
125  
(°C)  
150  
Channel temperature (initial)  
T
ch  
1
1
3
10  
30  
100  
B
VDSS  
15 V  
0 V  
Drain-source voltage  
V
(V)  
DS  
I
AR  
V
V
DS  
DD  
Test circuit  
Waveform  
1
2
B
VDSS  
VDSS  
R
V
= 25 Ω  
DD  
G
=
L I  
Ε
AS  
2
−
B
V
DD  
= 50 V, L = 350 µH  
5
2002-03-04  
2SK3440  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
• The information contained herein is subject to change without notice.  
6
2002-03-04  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.237341s