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2SK3466

型号：

2SK3466

描述：

斩波稳压器[ Chopper Regulator ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

7 页

PDF大小：

226 K

下载PDF手册
                                                        
                                                        
2SK3466  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3466  
Chopper Regulator  
Unit: mm  
·
·
·
·
Low drain-source ON resistance: R  
= 1.35 Ω (typ.)  
DS (ON)  
High forward transfer admittance: ïY ï = 4.0 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 500 V)  
DS  
= 10 V, I = 1 mA)  
D
DSS  
Enhancement-model: V = 2.0 to 4.0 V (V  
th DS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
500  
500  
±30  
5
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
Pulse  
(Note 1)  
(Note 1)  
I
D
Drain current  
A
I
20  
DP  
Drain power dissipation (Tc = 25°C)  
P
50  
W
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy  
E
180  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
5
5
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
150  
ch  
Storage temperature range  
T
-55 to 150  
stg  
Circuit Configuration  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
2.5  
Unit  
°C/W  
4
Thermal resistance, channel to case  
R
th (ch-c)  
Note 1: Please use devises on condition that the channel temperature  
is below 150°C.  
1
Note 2: V  
DD  
= 90 V, T = 25°C (initial), L = 12.2 mH, R = 25 W,  
ch  
G
I
= 5 A  
AR  
3
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-02-06  
                                                                    
                                                                     
                                                                                                  
                                                                                                  
2SK3466  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
I
V
V
¾
¾
¾
¾
±10  
100  
¾
mA  
mA  
V
GSS  
GS  
DS  
DS  
Drain cut-OFF current  
= 500 V, V  
= 0 V  
GS  
DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
I
= 10 mA, V = 0 V  
GS  
500  
2.0  
¾
¾
(BR) DSS  
D
V
V
V
V
= 10 V, I = 1 mA  
¾
4.0  
1.50  
¾
V
th  
DS  
GS  
DS  
D
R
= 10 V, I = 5 A  
1.35  
4.0  
780  
60  
W
DS (ON)  
D
ïY ï  
fs  
= 10 V, I = 5 A  
2.5  
¾
S
D
C
C
¾
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
ns  
Reverse transfer capacitance  
Output capacitance  
¾
¾
DS  
rss  
C
oss  
¾
200  
¾
Rise time  
t
¾
¾
¾
12  
25  
15  
¾
¾
¾
r
10 V  
I = 2.5 A Output  
D
V
GS  
0 V  
Turn-ON time  
Switching time  
t
on  
R
L
= 90 W  
15 W  
Fall time  
t
f
~
-
V
225 V  
DD  
<
Duty 1%, t = 10 ms  
w
Turn-OFF time  
t
¾
¾
60  
17  
¾
off  
Total gate charge  
Q
¾
g
(gate-source plus gate-drain)  
~
-
V
400 V, V  
= 10 V, I = 5 A  
nC  
DD  
GS  
D
Gate-source charge  
Q
Q
¾
¾
11  
6
¾
¾
gs  
Gate-drain (“miller”) charge  
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
5
20  
A
A
DSF  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 5 A, V  
= 5 A, V  
= 0 V  
¾
-1.7  
¾
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
1400  
9
ns  
mC  
rr  
dI /dt = 100 A/ms  
Q
rr  
¾
DR  
Marking  
※ Lot Number  
Type  
K3466  
Month (starting from alphabet A)  
※
Year  
(last number of the christian era)  
2
2002-02-06  
2SK3466  
I
– V  
I
– V  
DS  
D
DS  
D
5
4
3
2
1
0
10  
8
10, 15  
6
15  
Common source  
Tc = 25°C  
Pulse test  
Common source  
Tc = 25°C  
Pulse test  
10  
5.5  
6
5.25  
5
6
5.5  
4.75  
4.5  
4
5
2
4.5  
V
= 4 V  
GS  
V
= 4 V  
GS  
40  
(V)  
0
0
2
4
6
8
10  
10  
10  
0
10  
20  
30  
50  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
DS  
DS  
I
– V  
V
– V  
DS GS  
D
GS  
10  
8
20  
16  
12  
8
Common source  
= 20 V  
Common source  
Tc = 25°C  
Tc = -55°C  
V
DS  
Pulse test  
Pulse test  
25  
6
100  
I
= 5 A  
D
4
2.5  
1.2  
2
4
0
0
0
2
4
6
8
0
4
8
12  
16  
20  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
(V)  
GS  
GS  
ïY ï - I  
fs  
R
- I  
D
DS (ON) D  
10  
10  
Common source  
Common source  
Tc = 25°C  
Tc = -55°C  
V
= 20 V  
DS  
Pulse test  
25  
5
3
5
3
Pulse test  
100  
V
GS  
= 10 V  
15  
1
1
0.5  
0.3  
0.5  
0.3  
0.1  
0.3  
0.5  
1
3
5
0.1  
0.3  
0.5  
1
3
5
10  
Drain current  
I
D
(A)  
Drain current  
I
D
(A)  
3
2002-02-06  
2SK3466  
R
- Tc  
I
- V  
DS  
DS (ON)  
DR  
5
4
3
2
1
0
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
GS  
Pulse test  
I
= 5 A  
D
2.5  
1.2  
3
1
10  
0.5  
0.3  
5
3
1
V
GS  
= 0, -1 V  
0.1  
-80  
-40  
0
40  
80  
120  
160  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
(V)  
-1.2  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
- Tc  
th  
DS  
2000  
5
4
3
2
1
Common source  
= 10 V  
1000  
C
iss  
V
DS  
= 1 mA  
I
D
500  
300  
Pulse test  
100  
C
oss  
50  
30  
Common source  
V
= 0 V  
GS  
C
rss  
10  
5
f = 1 MHz  
Tc = 25°C  
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
(V)  
0
-80  
-40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
Case temperature Tc (°C)  
P
- Tc  
Dynamic input/output characteristics  
D
80  
60  
40  
20  
0
500  
20  
16  
12  
8
Common source  
I
= 5 A  
D
Tc = 25°C  
Pulse test  
400  
300  
200  
100  
0
V
DS  
V
DD  
= 100 V  
200  
400  
V
GS  
4
0
0
40  
80  
120  
160  
200  
0
5
10  
Total gate charge  
15  
20  
25  
Case temperature Tc (°C)  
Q
(nC)  
g
4
2002-02-06  
2SK3466  
r
th  
- t  
w
3
1
Duty = 0.5  
0.5  
0.3  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.05  
0.03  
0.02  
0.01  
t
Single pulse  
T
0.01  
Duty = t/T  
th (ch-c)  
0.005  
0.003  
R
=2.5°C/W  
10 m  
30 m  
100 m 300 m  
1 m  
3 m  
10 m  
30 m  
(s)  
100 m 300 m  
1
3
10  
Pulse width  
t
w
Safe operating area  
E
– T  
AS  
ch  
100  
200  
160  
120  
80  
50  
30  
I
I
max (pulsed) *  
D
D
100 ms *  
10  
max (continuous) *  
5
3
1 ms *  
1
DC operation  
Tc = 25°C  
0.5  
0.3  
40  
* Single nonrepetitive  
pulse Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
0.1  
0
0.05  
0.03  
25  
50  
75  
100  
125  
ch  
150  
Channel temperature (initial)  
T
(°C)  
V
DSS  
max  
0.01  
1
3
5
10  
30 50 100  
300 500 1000  
(V)  
Drain-source voltage  
V
DS  
B
VDSS  
15 V  
I
AR  
-15 V  
V
V
DD  
DS  
B
Test circuit  
Wave form  
æ
ö
÷
÷
ø
1
2
ç
R
DD  
= 25 W  
VDSS  
G
=
×L×I  
×
Ε
AS  
ç
2
-
V
= 90 V, L = 12.2 mH  
B
V
DD  
VDSS  
è
5
2002-02-06  
2SK3466  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
·
·
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
The information contained herein is subject to change without notice.  
6
2002-02-06  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  
厂商 型号 描述 页数 下载

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ETC

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ETC

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ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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