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2SK3476

型号：

2SK3476

描述：

东芝场效应晶体管硅N沟道MOS型[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

4 页

PDF大小：

114 K

下载PDF手册
2SK3476  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK3476  
VHF- and UHF-band Amplifier Applications  
Unit: mm  
·
·
·
Output power: P = 7.0 W (min)  
O
Gain: G = 11.4dB (min)  
P
Drain efficiency: η = 60% (min)  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gain-source voltage  
Drain current  
V
V
20  
±5  
V
V
DSS  
GSS  
I
3
A
D
Power dissipation  
P
(Note 1)  
20  
W
°C  
°C  
D
Channel temperature  
Storage temperature range  
T
150  
−45~150  
ch  
T
stg  
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)  
JEDEC  
JEITA  
―
―
Marking  
TOSHIBA  
2-5N1A  
2
Type name  
3
UC  
F
1
**  
Dot  
Lo No.  
1. Gate  
2. Source (heat sink)  
3. Drain  
Caution  
Please take care to avoid generating static electricity when handling this transistor.  
1
2002-01-09  
                                                                    
                                                                     
                                              
                                              
                                                                        
                                                                        
                                                                                           
                                                                                           
                                                                                                               
                                                                                                                
2SK3476  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Drain cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
V
V
V
V
= 20 V, V  
= 10 V  
= 0 V  
GS  
¾
¾
¾
¾
5
5
mA  
mA  
V
DSS  
DS  
GS  
DS  
GS  
DS  
DS  
DS  
Gate-source leakage current  
Threshold voltage  
Drain-source on-voltage  
Forward transconductance  
Input capacitance  
Output capacitance  
Output power  
GSS  
V
= 7.2 V, I = 2 mA  
0.55  
¾
1.05  
18  
1
1.55  
¾
¾
¾
¾
¾
¾
¾
th  
DS (ON)  
D
V
= 10 V, I = 75 mA  
mV  
S
D
Y
= 7.2 V, I = 1 A  
¾
fs  
DS  
C
iss  
= 7.2 V, V  
= 7.2 V, V  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
¾
53  
49  
¾
pF  
pF  
W
GS  
GS  
C
oss  
¾
P
7
O
V
I
= 7.2 V,  
DS  
h
= 500 mA (V  
= adjust),  
GS  
Drain efficiency  
60  
11.4  
¾
%
idle  
D
f = 520 MHz, P = 500 mW,  
i
Power gain  
G
¾
dB  
P
V
= 6.0 V,  
DS  
Low voltage output power  
P
I
= 500 mA (V = adjust),  
GS  
5
¾
¾
W
OL  
idle  
f = 520 MHz, P = 500 mW,  
i
V
V
= 10 V, P = 7 W,  
O
DS  
GS  
= adjust, P = adjust,  
i
Load mismatch  
¾
No degradation  
f = 520 MHz,  
VSWR LOAD 20:1 all phase  
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.  
Output Power Test Fixture  
(Test Condition: f = 520 MHz, V = 7.2 V, I  
= 500 mA, P = 500 mW)  
DS  
idle  
i
C11  
R1  
C5  
C4  
C9  
C1 C2 C3  
C12  
C10  
P
P
O
i
L1  
L2  
C6 C7 C8  
C15  
Z
= 50 W  
Z = 50 W  
L
G
C13  
C14  
R2  
V
V
DS  
GS  
C1: 15 pF  
C2: 11 pF  
C3: 9 pF  
C4: 30 pF  
C5: 30 pF  
C6: 11 pF  
C7: 8 pF  
C8: 9 pF  
L1: f0.6 mm enamel wire, 5.8ID, 4T  
L2: f0.6 mm enamel wire, 5.8ID, 8T  
R1: 2.2 W  
R2: 1.5 kW  
C9: 2200 pF  
C10: 2200 pF  
C11: 2200 pF  
C12: 10000 pF  
C13: 10 mF  
C14: 10000 pF  
C15: 10 mF  
2
2002-01-09  
2SK3476  
P
– P  
P – P  
O
O
i
i
12  
10  
8
20  
15  
10  
5
f = 520 MHz  
= 7.2 V  
f = 520 MHz  
I = 500 mA  
V
DS  
Tc = 25°C  
idle  
Tc = 25°C  
700 mA  
9.6 V  
500 mA  
I
= 300 mA  
idle  
6
7.2 V  
4
V
DS  
= 6.0 V  
2
0
0
0
200  
400  
600  
(mW)  
800  
800  
800  
1000  
1000  
1000  
0
200  
400  
600  
Input power P (mW)  
i
800  
800  
800  
1000  
Input power  
P
i
h
h
– P  
– P  
i
D
i
D
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
f = 520 MHz  
= 7.2 V  
f = 520 MHz  
I = 500 mA  
V
DS  
Tc = 25°C  
idle  
Tc = 25°C  
700 mA  
500 mA  
V
= 6.0 V  
DS  
7.2 V  
I
= 300 mA  
idle  
9.6 V  
0
200  
400  
Input power  
600  
(mW)  
0
200  
400  
600  
Input power P (mW)  
i
1000  
P
i
h
P
– P  
– P  
O
i
D
i
12  
10  
8
100  
80  
60  
40  
20  
0
f = 520 MHz  
f = 520 MHz  
V
I
= 7.2 V  
= 500 mA  
DS  
idle  
V
DS  
= 7.2 V  
I
= 500 mA  
idle  
-20°C  
-20°C  
60°C  
25°C  
60°C  
6
Tc = 100°C  
25°C  
Tc = 100°C  
4
2
0
0
200  
400  
600  
(mW)  
0
200  
400  
Input power  
600  
1000  
Input power  
P
P
(mW)  
i
i
Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.  
3
2002-01-09  
2SK3476  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
4
2002-01-09  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

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PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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