FUJI POWER MOSFET
2SK3505-01MR
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
500
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±14
±56
±30
14
A
ID(puls]
VGS
V
Drain(D)
A
IAR *2
mJ
kV/µs
kV/µs
W
EAS*1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
242
20
5
Gate(G)
°C
°C
2.1
Source(S)
60
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=2.27mH, Vcc=50V *2 Tch 150°C
=
=
=
=
<
*4 VDS 500V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
500
V
µ
ID= 250 A
VDS=VGS
3.0
5.0
25
V
Tch=25°C
µA
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=400V VGS=0V
VGS=±30V VDS=0V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=7A VGS=10V
0.35
0.46
Ω
7
14
1600
160
7
S
ID=7A VDS=25V
VDS=25V
Ciss
2400
240
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
10.5
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=7A
18
27
24
50
15
50
19
16
16
VGS=10V
35
td(off)
tf
Turn-off time toff
RGS=10 Ω
8
33
QG
VCC=250V
ID=14A
nC
Total Gate Charge
12.5
10.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
VGS=10V
14
L=2.27mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.00
1.50
VSD
trr
Qrr
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
V
0.65
6.0
µs
µC
-di/dt=100A/µs
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.08
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
