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2SK3547

型号:

2SK3547

描述:

硅N沟道MOSFET[ Silicon n-channel MOSFET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

50 K

Silicon Junction FETs (Small Signal)  
2SK3547  
Silicon n-channel MOSFET  
Unit: mm  
+0.05  
–0.02  
+0.05  
0.33  
0.10  
–0.02  
For switching  
3
Features  
High-speed switching  
Wide frequency band  
Gate-protection diode built-in  
+0.05  
–0.02  
1
2
0.23  
(0.40)(0.40)  
0.80±0.05  
1.20±0.05  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-source voltage  
Symbol  
VDS  
VGSO  
ID  
Rating  
50  
Unit  
V
Gate-source voltage (Drain open)  
Drain current  
±7  
V
100  
mA  
mA  
mW  
°C  
1: Gate  
2: Source  
3: Drain  
Peak drain current  
IDP  
200  
Power dissipation  
PD  
100  
SSSMini3-F1 Package  
Channel temperature  
Storage temperature  
Tch  
125  
Marking Symbol: 5F  
Tstg  
55 to +125  
°C  
Electrical Characteristics Ta = 25°C ± 3°C  
Parameter  
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
VDSS  
IDSS  
Conditions  
Min  
Typ  
Max  
Unit  
V
ID = 10 µA, VGS = 0  
50  
VDS = 50 V, VGS = 0  
VGS = ±7 V, VDS = 0  
ID = 1.0 µA, VDS = 3 V  
1.0  
±5.0  
1.5  
15  
µA  
µA  
V
IGSS  
Vth  
0.9  
20  
1.2  
8
Drain-source ON resistance  
RDS(on) ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
6
12  
Forward transfer admittance  
Yfs  
ID = 10 mA, VDS = 3 V, f = 1 kHz  
60  
12  
mS  
pF  
Short-circuit forward transfer capacitance  
(Common-source)  
Ciss  
VDS = 3 V, VGS = 0, f = 1 MHz  
Short-circuit output capacitance  
(Common-source)  
Coss  
VDS = 3 V, VGS = 0, f = 1 MHz  
7
pF  
Reverse transfer capacitance (Common-source)  
Turn-on time *  
Crss  
ton  
VDS = 3 V, VGS = 0, f = 1 MHz  
3
pF  
ns  
ns  
VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω  
VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω  
200  
200  
Turn-off time *  
toff  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ton, toff test circuit  
*
V
OUT 470 Ω  
90%  
10%  
VIN  
VGS = 3.0 V  
VDD = 3 V  
VOUT  
10%  
90%  
50 Ω  
ton  
toff  
Publication date: July 2003  
SJF00038AED  
1
2SK3547  
PD  
Ta  
ID  
VDS  
ID  
VGS  
250  
200  
150  
100  
50  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
Ta = 25°C  
VDS = 3 V  
Ta = −25°C  
25°C  
VGS = 2.0 V  
1.9 V  
1.8 V  
60  
1.7 V  
75°C  
40  
1.6 V  
1.5 V  
20  
0
0
0
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
2
4
6
8
10  
12  
40  
80  
120  
Gate-source voltage VGS (V)  
Drain-source voltage VDS (V)  
Ambient temperature Ta (°C)  
Yfs  
VGS  
RDS(on)  
VGS  
VIN  
IO  
60  
50  
40  
30  
20  
10  
0
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
10  
ID = 10 mA  
VDS = 3 V  
f = 1 kHz  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
25°C  
Ta = 75°C  
25°C  
1
0
2
4
6
0
1
2
3
1
10  
Output current IO (mA)  
100  
Gate-source voltage VGS (V)  
Gate-source voltage VGS (V)  
SJF00038AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government  
if any of the products or technologies described in this material and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteris-  
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-  
tual property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without  
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of  
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets  
are individually exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 JUL  
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