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2SK3573

型号：

2SK3573

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

79 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3573  
SWITCHING  
N-CHANNEL POWER MOS FET  
★
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3573 is N-channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
2SK3573  
PACKAGE  
TO-220AB  
TO-262  
2SK3573-S  
2SK3573-ZK  
2SK3573-Z  
TO-263  
TO-220SMD Note  
FEATURES  
Note TO-220SMD package is produced only in Japan.  
• 4.5 V drive available  
• Low on-state resistance  
RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A)  
• Low gate charge  
QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)  
• Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
V
V
±20  
±83  
±332  
1.5  
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
PT2  
105  
150  
Tch  
Storage Temperature  
Tstg  
–55 to +150  
°C  
Note PW ≤ 10 µs, Duty Cycle ≤ 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16259EJ2V0DS00 (2nd edition)  
Date Published September 2002 NS CP(K)  
Printed in Japan  
The mark ★ shows major revised points.  
2002  
©
2SK3573  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 20 V, VGS = 0 V  
MIN.  
TYP.  
MAX.  
10  
UNIT  
µA  
nA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 42 A  
VGS = 10 V, ID = 42 A  
VGS = 4.5 V, ID = 42 A  
VDS = 10 V  
±100  
2.5  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
27  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
2.9  
3.8  
4000  
1550  
570  
23  
4.0  
6.0  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 10 V, ID = 42 A  
VGS = 10 V  
23  
ns  
Turn-off Delay Time  
Fall Time  
RG = 10 Ω  
110  
40  
ns  
ns  
Total Gate Charge  
QG  
VDD = 16 V  
68  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
12  
ID = 83 A  
18  
IF = 83 A, VGS = 0 V  
IF = 83 A, VGS = 0 V  
di/dt = 100 A/µs  
1.0  
77  
ns  
Qrr  
115  
nC  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
I
G
= 2 mA  
RL  
V
V
GS  
R
L
90%  
V
GS  
Wave Form  
V
GS  
10%  
RG  
0
PG.  
V
DD  
50 Ω  
PG.  
V
DD  
DS  
90%  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
t
d(on)  
t
r
t
d(off)  
tf  
τ = 1µs  
t
on  
toff  
Duty Cycle ≤ 1%  
2
Data Sheet D16259EJ2V0DS  
2SK3573  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100 125 150 175  
0
25  
50  
75  
100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
RDS(on) Limited  
ID(pulse)  
PW = 10 µs  
100 µs  
1 ms  
ID(DC)  
DC  
10 ms  
Power Dissipation Limited  
1
TC = 25°C  
Single pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Single pulse  
100  
10  
Rth(ch-A) = 83.3°C/W  
Rth(ch-C) = 1.19°C/W  
1
0.1  
0.01  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D16259EJ2V0DS  
2SK3573  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
350  
300  
250  
200  
150  
100  
50  
1000  
100  
10  
VDS = 10 V  
Pulsed  
Pulsed  
VGS = 10 V  
4.5 V  
Tch = 150°C  
75°C  
25°C  
−55°C  
1
0.1  
0.01  
0
0
0.5  
1
1.5  
0
1
2
3
4
5
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
3
2.5  
2
100  
10  
1
DS  
V
= 10 V  
VDS = 10 V  
ID = 1 mA  
Pulsed  
T
ch  
= −55°C  
25°C  
75°C  
150°C  
1.5  
1
0.5  
0
0.1  
-50  
0
50  
100  
150  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
10  
10  
Pulsed  
Pulsed  
8
8
6
VGS = 4.5 V  
6
4
2
0
4
ID = 42 A  
10 V  
2
0
1
10  
100  
1000  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D16259EJ2V0DS  
2SK3573  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
7
10000  
ID = 42 A  
Pulsed  
6
5
4
3
2
1
0
Ciss  
VGS = 4.5 V  
1000  
C oss  
10 V  
C rss  
VGS = 0 V  
f = 1 MHz  
100  
-50  
0
50  
100  
150  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
20  
10  
VDD = 10 V  
VDD = 16 V  
10 V  
GS  
V
= 10 V  
16  
12  
8
8
RG = 10 Ω  
td(off)  
tf  
6
VGS  
td(on)  
tr  
4
4
2
VDS  
ID = 83 A  
60 80  
0
0
1
0
20  
40  
0.1  
1
10  
100  
QG - Gate Charge - nC  
ID - Drain Current - A  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
1000  
100  
10  
1000  
100  
10  
Pulsed  
VGS = 10 V  
0 V  
1
0.1  
0.01  
di/dt = 100 A/µs  
VGS = 0 V  
1
0.1  
1
10  
100  
0
0.5  
1
1.5  
VF(S-D) - Source to Drain Voltage - V  
ID - Drain Current - A  
5
Data Sheet D16259EJ2V0DS  
2SK3573  
★
PACKAGE DRAWINGS (Unit: mm)  
1) TO-220AB (MP-25)  
2) TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
10.6 MAX.  
10.0 TYP.  
4.8 MAX.  
1.3±0.2  
φ
3.6±0.2  
10 TYP.  
1.3±0.2  
4
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
1. Gate  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
2.8±0.2  
2.54 TYP.  
2. Drain  
3. Source  
4. Fin (Drain)  
3) TO-263 (MP-25ZK)  
4) TO-220SMD (MP-25Z) Note  
10.0±0.2  
4.45±0.2  
4.8 MAX.  
10 TYP.  
0.4  
1.3±0.2  
No plating  
1.3±0.2  
8.4 TYP.  
4
4
0.025 to  
0.25  
1
2
3
1.4±0.2  
0.75±0.3  
2.54 TYP.  
0.5±0.2  
0.7±0.15  
2.54 TYP.  
2.54  
0.25  
1. Gate  
1
2
3
2. Drain  
3. Source  
4. Fin (Drain)  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
Note This package is produced only in Japan.  
EQUIVALENT CIRCUIT  
Drain (D)  
Remark Strong electric field, when exposed to this device, can cause  
destruction of the gate oxide and ultimately degrade the device  
operation. Steps must be taken to stop generation of static electricity  
as much as possible, and quickly dissipate it once, when it has  
occurred.  
Body  
Gate (G)  
Diode  
Source (S)  
6
Data Sheet D16259EJ2V0DS  
2SK3573  
[MEMO]  
7
Data Sheet D16259EJ2V0DS  
2SK3573  
•
The information in this document is current as of September, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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