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2SK3576

型号:

2SK3576

描述:

N沟道MOS场效应晶体管高速开关[ N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

69 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3576  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK3576 is a switching device which can be driven  
directly by a 2.5 V power source.  
The device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
+0.1  
–0.05  
0.4  
+0.1  
–0.06  
0.16  
3
FEATURES  
0 to 0.1  
1
2.5V drive available  
2
Low on-state resistance  
RDS(on)1 = 50 mMAX. (VGS = 4.5 V, ID = 2.0 A)  
RDS(on)2 = 53 mMAX. (VGS = 4.0 V, ID = 2.0 A)  
RDS(on)3 = 75 mMAX. (VGS = 2.5 V, ID = 2.0 A)  
0.65  
0.95 0.95  
1.9  
0.9 to 1.1  
2.9 ±0.2  
ORDERING INFORMATION  
1
: Gate  
PART NUMBER  
2SK3576  
PACKAGE  
2 : Source  
3 : Drain  
SC-96 (Mini Mold Thin Type)  
Marking: XK  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
EQUIVALENT CIRCUIT  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
V
V
Drain  
±12  
±4.0  
±16  
0.2  
A
Body  
A
Diode  
Gate  
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
W
W
°C  
PT2  
1.25  
150  
Gate  
Tch  
Protection  
Diode  
Source  
Storage Temperature  
Tstg  
–55 to +150 °C  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on FR-4 board, t 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
2001  
©
Document No.  
Date Published May 2002 NS CP(K)  
Printed in Japan  
D15939EJ1V0DS00 (1st edition)  
2SK3576  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 20 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
10  
±10  
1.5  
µA  
µA  
V
IGSS  
VGS = ±12 V, VDS = 0 V  
VDS = 10 V, ID = 1.0 mA  
VDS = 10 V, ID = 2.0 A  
VGS = 4.5 V, ID = 2.0 A  
VGS = 4.0 V, ID = 2.0 A  
VGS = 2.5 V, ID = 2.0 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
0.5  
1.0  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
40  
42  
50  
53  
75  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
56  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
250  
80  
Coss  
VGS = 0 V  
Crss  
f = 1.0 MHz  
60  
td(on)  
VDD = 10 V, ID = 2.0 A  
VGS = 4.0 V  
28  
tr  
140  
110  
180  
3.3  
0.7  
1.5  
0.89  
ns  
Turn-off Delay Time  
Fall Time  
td(off)  
RG = 10 Ω  
ns  
tf  
ns  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QG  
VDD = 16 V  
nC  
nC  
nC  
V
QGS  
VGS = 4.0 V  
QGD  
ID = 4.0 A  
VF(S-D)  
IF = 4.0 A, VGS = 0 V  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
I
G
= 2 mA  
RL  
V
V
GS  
R
L
90%  
V
GS  
Wave Form  
V
GS  
10%  
RG  
0
PG.  
V
DD  
50  
PG.  
V
DD  
DS  
90%  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
t
d(on)  
t
r
t
d(off)  
tf  
τ = 1µs  
t
on  
toff  
Duty Cycle 1%  
2
Data Sheet D15939EJ1V0DS  
2SK3576  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
1.5  
1.25  
1
0.75  
0.5  
0.25  
0
0
20  
40  
60  
80 100 120 140 160  
0
20  
40  
60  
80  
100 120 140 160  
TA - Ambient Temperature - °C  
TA - Ambient Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
DS(on)  
R
Limited  
GS  
(V = 4.5 V)  
D(pulse)  
I
ID(DC)  
PW = 1 ms  
1
10 ms  
100 ms  
5 s  
0.1  
0.01  
Single Pulse  
Mounted on FR-4 board of  
50 mm × 50 mm × 1.6 mm  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Single Pulse  
1000  
100  
10  
Without board  
Mounted on FR-4 board of  
50 mm × 50 mm × 1.6 mm  
1
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D15939EJ1V0DS  
2SK3576  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
20  
16  
12  
8
100  
10  
Pulsed  
DS  
V
= 10 V  
GS  
V
= 4.5 V  
1
4.0 V  
A
T
= 125°C  
75°C  
25°C  
25°C  
0.1  
0.01  
0.001  
0.0001  
0.00001  
2.5 V  
0.4  
4
0
0.0  
0.2  
0.6  
0.8  
1.0  
0
1
2
3
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
1.5  
100  
10  
VDS = 10 V  
VDS = 10 V  
ID = 1 mA  
1
1
TA = 125°C  
75°C  
25°C  
25°C  
0.1  
0.5  
0.01  
-50  
0
50  
100  
150  
0.01  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATERESISTANCE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
100  
ID = 2.0 A  
ID = 2.0 A  
90  
80  
70  
60  
50  
40  
30  
20  
90  
80  
70  
60  
50  
40  
30  
20  
GS  
V
= 2.5 V  
4.0 V  
4.5 V  
-50  
0
50  
100  
150  
0
2
4
6
8
10  
12  
Tch - Channel Temperature - °C  
VGS - Gate to Source Voltage - V  
4
Data Sheet D15939EJ1V0DS  
2SK3576  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
90  
80  
GS  
V
= 2.5 V  
VGS = 4.0 V  
Pulsed  
Pulsed  
70  
80  
70  
60  
50  
40  
30  
A
°
= 125 C  
T
A
°
= 125 C  
T
60  
50  
40  
30  
20  
°
75 C  
°
75 C  
25°C  
°
25 C  
25°C  
°
25 C  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
ID - Drain Current - A  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
1000  
80  
VGS = 4.5 V  
Pulsed  
70  
VGS = 0 V  
f = 1 MHz  
iss  
C
60  
A
°
= 125 C  
T
°
75 C  
50  
40  
30  
20  
100  
25°C  
Coss  
rss  
C
°
25 C  
10  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
ID - Drain Current - A  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
100  
1000  
Pulsed  
DD  
V
= 10 V  
GS  
V
R
= 4.0 V  
G
= 10  
r
t
10  
1
f
t
GS  
V
= 0 V  
100  
d(off)  
d(on)  
t
t
0.1  
10  
0.01  
0.1  
1
10  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
ID - Drain Current - A  
VSD - Source to Drain Voltage - V  
5
Data Sheet D15939EJ1V0DS  
2SK3576  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
5
ID = 10 A  
4
3
2
1
0
VDD = 16 V  
10 V  
0
1
2
3
4
5
QG - Gate Charge - nC  
6
Data Sheet D15939EJ1V0DS  
2SK3576  
[MEMO]  
7
Data Sheet D15939EJ1V0DS  
2SK3576  
The information in this document is current as of May, 2002. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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