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2SK3608-S

型号：

2SK3608-S

描述：

N沟道硅功率MOSFET[ N-CHANNEL SILICON POWER MOSFET ]

品牌：

FUJI[ FUJI ELECTRIC ]

页数：

4 页

PDF大小：

124 K

下载PDF手册
2SK3608-01L,S,SJ  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
P4  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
200  
Unit  
V
Drain-source voltage  
V
VDSX *5  
ID  
170  
±13  
±52  
±30  
13  
Equivalent circuit schematic  
A
Continuous drain current  
Pulsed drain current  
Gate-source voltage  
A
ID(puls]  
VGS  
V
Drain(D)  
A
Non-repetitive Avalanche current IAS *2  
mJ  
kV/µs  
kV/µs  
W
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
EAS *1  
dVDS/dt *4  
dV/dt *3  
PD Ta=25  
Tc=25  
Tch  
175  
20  
5
Gate(G)  
°C  
°C  
1.67  
Source(S)  
50  
+150  
-55 to +150  
Operating and storage  
temperature range  
°C  
°C  
Tstg  
<
<
<
<
*1 L=1.65mH, Vcc=48V *2 Tch 150°C  
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
=
=
=
=
<
*4 VDS 200V  
*5 VGS=-30V  
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
V
200  
Drain-source breakdown voltaget  
Gate threshold voltage  
µ
ID= 250 A  
VDS=VGS  
V
3.0  
5.0  
25  
Tch=25°C  
µA  
VDS=200V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
170  
VDS=160V VGS=0V  
VGS=±30V VDS=0V  
IGSS  
RDS(on)  
gfs  
nA  
10  
131  
11  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=6.5A VGS=10V  
mΩ  
S
5.5  
ID=6.5A VDS=25V  
VDS=75V  
Ciss  
Coss  
Crss  
td(on)  
tr  
770  
110  
5
1155  
165  
pF  
VGS=0V  
Output capacitance  
7.5  
18  
3.9  
33  
9.2  
f=1MHz  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=48V ID=6.5A  
12  
2.6  
22  
6.1  
VGS=10V  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
21  
8
31.5  
12  
QG  
VCC=100V  
ID=13A  
nC  
Total Gate Charge  
QGS  
QGD  
IAV  
Gate-Source Charge  
Gate-Drain Charge  
5
7.5  
VGS=10V  
13  
L=100µH Tch=25°C  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.10  
1.65  
VSD  
IF=13A VGS=0V Tch=25°C  
IF=13A VGS=0V  
-di/dt=100A/µs  
V
0.15  
0.88  
trr  
Qrr  
µs  
µC  
Tch=25°C  
Thermalcharacteristics  
Item  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Units  
Rth(ch-c)  
channel to case  
2.5  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
75.0  
°C/W  
www.fujielectric.co.jp/denshi/scd  
1
2SK3608-01L,S,SJ  
Characteristics  
FUJI POWER MOSFET  
Allowable Power Dissipation  
PD=f(Tc)  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=13A  
70  
300  
250  
200  
150  
100  
50  
60  
50  
40  
30  
20  
10  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
Tc [°C]  
Typical Output Characteristics  
Typical Transfer Characteristic  
ID=f(VDS):80µs Pulse test,Tch=25°C  
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C  
40  
35  
30  
25  
20  
15  
10  
5
100  
10  
1
20V  
10V  
8V  
7.5V  
7.0V  
6.5V  
6.0V  
VGS=5.5V  
0.1  
0
0
1
2
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
12  
VGS[V]  
VDS [V]  
Typical Transconductance  
Typical Drain-Source on-state Resistance  
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C  
RDS(on)=f(ID):80µs Pulse test, Tch=25°C  
100  
10  
1
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
VGS=  
6.0V  
6.5V  
7.0V  
5.5V  
7.5V  
8V  
10V  
20V  
0.1  
0.1  
1
10  
100  
0
5
10  
15  
20  
ID [A]  
25  
30  
35  
40  
ID [A]  
2
2SK3608-01L,S,SJ  
FUJI POWER MOSFET  
Drain-Source On-state Resistance  
Gate Threshold Voltage vs. Tch  
RDS(on)=f(Tch):ID=6.5A,VGS=10V  
VGS(th)=f(Tch):VDS=VGS,ID=250µA  
500  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
450  
400  
350  
300  
250  
max.  
min.  
max.  
200  
150  
typ.  
100  
50  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
-50  
-25  
0
25  
50  
75  
100 125 150  
Tch [°C]  
Tch [°C]  
Typical Capacitance  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=13A, Tch=25°C  
C=f(VDS):VGS=0V,f=1MHz  
14  
12  
10  
8
100  
10-1  
10-2  
10-3  
Ciss  
Coss  
Vcc= 100V  
6
4
Crss  
2
0
10-1  
100  
101  
VDS [V]  
102  
0
10  
20  
30  
40  
Qg [nC]  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80µs Pulse test,Tch=25°C  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω  
103  
102  
101  
100  
100  
10  
1
tf  
td(off)  
td(on)  
tr  
0.1  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  
10-1  
100  
101  
102  
VSD [V]  
ID [A]  
3
2SK3608-01L,S,SJ  
FUJI POWER MOSFET  
Transient Thermal Impedance  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C. Vcc=48V  
Zth(ch-c)=f(t):Duty=0  
101  
102  
101  
100  
10-1  
10-2  
100  
10-1  
10-2  
10-3  
Single Pulse  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
t [sec]  
tAV [sec]  
Outline Drawings (mm)  
JPOER MS E
See Note: 1.  
Trademark  
See Note: 1.  
Trademark  
4
See Note: 1.  
Fig. 1.  
Fig. 1.  
Trademark  
Lot No.  
Lot No.  
Type name  
Type name  
Lot No.  
Type name  
Fig. 1.  
PRE-SOLDER  
Fig. 1.  
CONNECTION  
CONNECTION  
1
2
3
GATE  
GATE  
1
2
3
4
DRAIN  
DRAIN  
SOURCE  
4
SOURCE  
Solder Plating  
Solder Plating  
Pre-Solder  
Pre-Solder  
Notes  
CONNECTION  
Notes  
1. ( ) : Reference dimensions.  
1. ( ) : Reference dimensions.  
1
2
3
GATE  
1
2
3
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
2. The metal part is covered with  
the solder plating, part of cutting  
is without the solder plating.  
DRAIN  
Note: 1. Guaranteed mark of  
avalanche ruggedness.  
SOURCE  
Note: 1. Guaranteed mark of avalanche ruggedness.  
DIMENSIONS ARE IN MILLIMETERS.  
4
厂商 型号 描述 页数 下载

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ETC

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

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PANASONIC

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